Uniform shallow trench isolation
A method for forming a field-effect transistor (FET) including forming a plurality of individual fins on a substrate. The method continues with forming a dummy anchor structure, with the dummy anchor located outside the outermost fin. The fins and dummy anchor define a trench, where the trench has a width dimension. The method continues with depositing a shallow trench isolation (STI) material into the trench and between the fins, where the STI material places uniform tension stresses on both sides of the individual fins.
1. A field-effect transistor (FET) device comprising:
a plurality of individual fins on a substrate;
a dummy anchor structure, wherein the dummy anchor structure is located outside the outermost fin and includes a first liner material and a second liner material directly above the first liner material; and
a shallow trench isolation (STI) material deposited between the dummy anchor structure and the outermost fin and between the fins.
2. The device of claim 1 , wherein a width dimension of the STI material between the dummy anchor structure and the outermost fin is equal to a distance between adjacent fins.
3. The device of claim 1 , wherein a width dimension of the STI material between the dummy anchor structure and the outermost fin is different than a distance between adjacent fins.
4. The device of claim 1 , wherein the first liner material has a width dimension equal to a width dimension of the STI material between the dummy anchor structure and the outermost fin.
5. The device of claim 1 , wherein the first liner material has a width dimension different than a width dimension of the STI material between the dummy anchor structure and the outermost fin.
6. The device of claim 1 , wherein the plurality of fins comprises silicon nitride (SiN).
7. The device of claim 1 , wherein the STI material is a flowable oxide.
8. The device of claim 1 , further comprising a high-k insulator layer over the STI material.
9. The device of claim 8 , wherein the high-k insulator layer is conformally formed over the STI material.
10. The device of claim 8 , wherein the high-k insulator material includes one or more insulator materials.
11. The device of claim 10 , wherein the one or more insulator materials include silicon oxide.
12. The device of claim 10 , wherein the one or more insulator materials include a nitride.
13. The device of claim 12 , wherein the one or more insulator materials include silicon oxynitride, silicon nitride, or silicon-boron-carbon-nitride (SiBCN), silicon-oxygen-carbon-nitride (SiOCN), silicon-oxygen-carbon (SiOC), and silicon-carbon-nitride (SiCN).
14. The device of claim 1 , further comprising a metal contact layer over the high-k insulator layer.
15. The device of claim 14 , wherein the metal contact comprises tungsten (W).
16. The device of claim 14 , wherein the metal contact includes a work function setting layer.
17. The device of 16 , wherein the work function setting layer is a nitride.
18. The device of claim 17 , wherein the nitride is titanium nitride (TiN), hafnium nitride (HfN), hafnium silicon nitride (HfSiN), tantalum nitride (TaN), tantalum silicon nitride (TaSiN), tungsten nitride (WN), molybdenum nitride (MoN), or niobium nitride (NbN).
19. The device of claim 16 , wherein the work function setting layer is a carbide.
20. The device of claim 19 , wherein the carbide is titanium carbide (TiC) titanium aluminum carbide (TiA1C), tantalum carbide (TaC), hafnium carbide (HfC), or combinations thereof.