Semiconductor apparatus, method of manufacturing semiconductor apparatus, method of designing semiconductor apparatus, and electronic apparatus

1. A method of manufacturing a semiconductor device, the method including the steps of:

forming a first material layer with a first surface and a second surface;

forming a first insulating layer in the first material layer;

forming a second material layer with a first surface and a second surface;

forming a second insulating layer in the second material layer;

securing the second surface of the first material layer against the first surface of the second material layer; and

forming a first via and a second via simultaneously, wherein along a common cross section parallel to an interface between the two material layers the first via has a cross section larger than that of the second via, wherein the first via extends into the second insulating layer in the second material layer, and wherein the second via extends into the first insulating layer in the first material layer.

2. The method of claim 1 wherein the first via and the second via are filled with a conductive material.

3. The method of claim 1 wherein the first via reaches a second interconnect in the second insulating layer in the second material layer.

4. The method of claim 1 wherein the second via reaches a first interconnect in the first insulating layer in the first material layer.

5. The method of claim 1 further including the step of forming an on chip lens over a photodiode of the semiconductor device.

6. The method of claim 5 , further including the step of forming an on chip color filter between the photodiode and the on chip lens.