Apparatus and method related to sensor die ESD protection

1. An apparatus, comprising:

a substrate;

a metal layer disposed on the substrate;

a silicon layer disposed on the metal layer, the silicon layer including an image sensor device;

a dielectric layer disposed on the metal layer;

a shield layer disposed on the dielectric layer and including a light shield; and

a bond pad having an electrical connection to the metal layer, the light shield being configured to block light from being detected by the image sensor device, the light shield having an electrical connection to the bond pad.

2. The apparatus as in claim 1 , wherein the electrical connection of the bond pad to the metal layer is made using a through-silicon via (TSV), and

wherein the electrical connection of the light shield to the bond pad is made at the TSV.

3. The apparatus as in claim 2 , wherein the TSV includes an electrically conductive material, and

wherein the TSV is connected to a slotted component in the metal layer, the slotted component including the same electrically conductive material of the TSV.

4. The apparatus as in claim 1 , wherein the shield layer includes a second bond pad;

wherein the metal layer includes an electrostatic discharge (ESD) ground bus, the ESD ground bus having an electrical resistance between a first ESD device having an electrical connection to the bond pad and a second ESD device having an electrical connection to the second bond pad, each of the first ESD device and the second ESD device being configured to direct ESD current away from the image sensor device, and

wherein the light shield includes an electrically conductive material opaque to light at wavelengths the image sensor device is configured to detect, the light shield having an electrical connection to the ESD ground bus.

5. The apparatus as in claim 4 , wherein the electrically conductive material of the light shield includes one of aluminum, copper, and tungsten.

6. The apparatus as in claim 4 , wherein the electrical connection of the light shield to the ESD ground bus is a parallel electrical connection, and

wherein the light shield has an electrical resistance, the electrical resistance of the light shield being less than 50% of the electrical resistance of the ESD ground bus.

7. An image sensor, comprising:

a semiconductor die including:

an image sensor device;

an electrostatic discharge (ESD) ground bus configured to direct ESD current away from the image sensor device; and

a light shield configured to block light from the image sensor device at wavelengths the image sensor device is configured to detect, the light shield including an electrically conductive material opaque to light at the wavelengths the image sensor device is configured to detect, the light shield having an electrical connection to the ESD ground bus.

8. The image sensor as in claim 7 , wherein the electrical connection of the light shield to the ESD ground bus is a parallel electrical connection, and

wherein the light shield has an electrical resistance, the electrical resistance of the light shield being less than 50% of the electrical resistance of the ESD ground bus.

9. The image sensor as in claim 7 , wherein the electrically conductive material of the light shield includes one of aluminum, copper, and tungsten.

10. The image sensor as in claim 7 , wherein the semiconductor die further includes a bond pad having an electrical connection to the light shield.

11. The image sensor as in claim 10 , wherein the light shield is included in a shield layer, the shield layer being disposed on a dielectric layer, the dielectric layer being disposed on a metal layer,

wherein an electrical connection of the bond pad to the metal layer is made using a through-silicon via (TSV), and

wherein the electrical connection of the light shield to the bond pad is made at the TSV.

12. The image sensor as in claim 10 , wherein the TSV includes an electrically conductive material, and

wherein the TSV is connected to a slotted component in the metal layer, the slotted component including the same electrically conductive material of the TSV.

13. The image sensor as in claim 10 , wherein the semiconductor die further includes a second bond pad, the second bond pad having no electrical connection to the light shield.

14. A method, comprising:

receiving, by an electrostatic discharge (ESD) device of an image sensor, an ESD current, the image sensor including an image sensor device and a light shield, the light shield being configured to block light from being detected by the image sensor device; and

performing, by the ESD device, a shunting operation to direct the ESD current away from the image sensor device and through the light shield to a ground.

15. The method as in claim 14 , wherein the ESD current is received from a bond pad of the image sensor, the bond pad having electrical connections to the light shield and the ESD device.

16. The method as in claim 15 , wherein the image sensor includes a semiconductor die, the semiconductor die including:

a substrate;

a metal layer disposed on the substrate, the metal layer including an electrostatic discharge (ESD) ground bus;

a silicon layer disposed on the metal layer, the silicon layer including the image sensor device;

an dielectric layer disposed on the metal layer; and

a shield layer disposed on the dielectric layer, the shield layer including the light shield and the bond pad, the bond pad having an electrical connection to the metal layer, the light shield having an electrical connection to the ESD ground bus.

17. The method as in claim 16 , wherein the electrical connection of the light shield to the ESD ground bus is a parallel electrical connection, and

wherein the light shield has an electrical resistance, the electrical resistance of the light shield being less than 50% of the electrical resistance of the ESD ground bus.

18. The method as in claim 16 , wherein the shield layer includes a second bond pad, the second bond pad having no electrical connection to the light shield.