Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
There is provided a technique which includes: forming a film containing at least Si, O and N on a substrate in a process chamber by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: forming a first layer by supplying a precursor gas containing at least a Si—N bond and a Si—Cl bond and a first catalyst gas to the substrate; exhausting the precursor gas and the first catalyst gas in the process chamber through an exhaust system; forming a second layer by supplying an oxidizing gas and a second catalyst gas to the substrate to modify the first layer; and exhausting the oxidizing gas and the second catalyst gas in the process chamber through the exhaust system.
1. A method of manufacturing a semiconductor device, comprising:
forming a film containing at least Si, O and N on a substrate in a process chamber by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
forming a first layer by supplying a precursor gas containing at least a Si—N bond and a Si—Cl bond and a first catalyst gas to the substrate;
exhausting the precursor gas and the first catalyst gas in the process chamber through an exhaust system;
forming a second layer by supplying an oxidizing gas and a second catalyst gas to the substrate to modify the first layer; and
exhausting the oxidizing gas and the second catalyst gas in the process chamber through the exhaust system.
2. The method of claim 1 , wherein the Si—N bond contained in the precursor gas is held without being cut, and is incorporated, as it is, into the first layer in the act of forming the first layer.
3. The method of claim 2 , wherein the Si—N bond contained in the first layer is held without being cut, and is incorporated, as it is, into the second layer in the act of forming the second layer.
4. The method of claim 1 , wherein, in at least a specific cycle when the cycle is performed the predetermined number of times, at least one of the act of forming the first layer and the act of forming the second layer includes supplying and confining each of the gases into the process chamber in a state in which the exhaust system is closed.
5. The method of claim 4 , wherein, in at least the specific cycle, the act of forming the first layer includes supplying and confining the precursor gas and the first catalyst gas into the process chamber in the state in which the exhaust system is closed.
6. The method of claim 5 , wherein the confining is performed so as to make a concentration of N in the first layer higher than a concentration of N in the first layer in a case where the confining is not performed.
7. The method of claim 5 , wherein a concentration of N in the first layer is finely adjusted by adjusting a confining time.
8. The method of claim 4 , wherein, in at least the specific cycle, the act of forming the second layer includes supplying and confining the oxidizing gas and the second catalyst gas into the process chamber in the state in which the exhaust system is closed.
9. The method of claim 8 , wherein the confining is performed so as to make a concentration of O in the second layer higher than a concentration of O in the second layer in a case where the confining is not performed.
10. The method of claim 8 , wherein a concentration of O in the second layer is finely adjusted by adjusting a confining time.
11. The method of claim 1 , wherein the precursor gas includes at least one selected from a group consisting of NH(SiCl 3 ) 2 , NR(SiH x Cl y ) 2 , NR 2 (SiH x Cl y ), N(SiH x Cl y R z ) 3 , NH(SiH x Cl y R z ) 2 and NH 2 (SiH x Cl y R z ) (where x+y+z=3, and R is an alkyl group).
12. The method of claim 1 , wherein the precursor gas contains a Si—N—Si bond.
13. The method of claim 1 , wherein the oxidizing gas includes at least one selected from a group consisting of H 2 O, H 2 O 2 , O 3 and O 2 .
14. The method of claim 1 , wherein the oxidizing gas contains an O—H bond.
15. The method of claim 1 , wherein the catalyst gas includes at least one selected from a group consisting of pyridine, aminopyridine, picoline, lutidine, piperazine, piperidine, triethylamine, diethylamine, monoethylamine, trimethylamine, dimethylamine, monomethylamine and ammonia.
16. The method of claim 1 , wherein the act of forming the first layer includes further supplying a second precursor gas containing a Si—C bond and a Si—Cl bond to the substrate.
17. The method of claim 1 , wherein the act of forming the first layer includes further supplying a third precursor gas containing a Si—Si bond and a Si—Cl bond to the substrate.
18. A substrate processing apparatus comprising:
a process chamber configured to accommodate a substrate;
a first supply system configured to supply a precursor gas to the substrate in the process chamber;
a second supply system configured to supply an oxidizing gas to the substrate in the process chamber;
a third supply system configured to supply a catalyst gas to the substrate in the process chamber;
an exhaust system configured to exhaust an interior of the process chamber; and
a controller configured to control the first supply system, the second supply system, the third supply system and the exhaust system so as to form a film containing at least Si, O and N on the substrate in the process chamber by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
forming a first layer by supplying a precursor gas containing at least a Si—N bond and a Si—Cl bond and a first catalyst gas to the substrate;
exhausting the precursor gas and the first catalyst gas in the process chamber through an exhaust system;
forming a second layer by supplying an oxidizing gas and a second catalyst gas to the substrate to modify the first layer; and
exhausting the oxidizing gas and the second catalyst gas in the process chamber through the exhaust system.
19. A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process of forming a film containing at least Si, O and N on a substrate in a process chamber of a substrate processing apparatus by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
forming a first layer by supplying a precursor gas containing at least a Si—N bond and a Si—Cl bond and a first catalyst gas to the substrate;
exhausting the precursor gas and the first catalyst gas in the process chamber through an exhaust system;
forming a second layer by supplying an oxidizing gas and a second catalyst gas to the substrate to modify the first layer; and
exhausting the oxidizing gas and the second catalyst gas in the process chamber through the exhaust system.