Logical operations using memory cells

1. An apparatus, comprising:

a first three transistor (3T) memory cell controlled to invert a data value stored therein;

a second 3T memory cell controlled to invert a data value stored therein; and

a controller coupled to the first memory cell and second memory cell, wherein the controller is configured to:

cause performance of a logical operation between the data value stored in the first memory cell and the data value stored in the second memory cell;

cause a result of the logical operation to be stored in a sense amplifier coupled to the first 3T memory cell or the second 3T memory cell; and

control operation of a first transistor and a second transistor coupled to the sense amplifier to selectively transfer the result of the logical operation to one of the first 3T memory cell or the second 3T memory cell and a complement of the result of the logical operation to the other of the first 3T memory cell or the second 3T memory cell.

2. The apparatus of claim 1 , further comprising a write complement transistor coupled to the first memory cell, the write complement transistor operable to transfer a complement of a result of the logical operation via a digit line coupled to the first 3T memory cell.

3. The apparatus of claim 1 , wherein the first memory cell and the second memory cell are oriented vertically and are disposed within an area defined by respective first digit lines and respective second digit lines coupled to the first memory cell and the second memory cell.

4. The apparatus of claim 1 , wherein the logical operation comprises a NOR logical operation.

5. An apparatus, comprising:

an array of three transistor (3T) memory cells; and

a controller coupled to the array of 3T memory cells, the controller configured to cause:

a first charge corresponding to a first operand of a logical operation to be inverted in a first memory 3T cell of the array of 3T memory cells;

a second charge corresponding to a second operand of the logical operation to be inverted in a second 3T memory cell of the array of 3T memory cells;

performance of a logical operation between the inverted first operand and the inverted second operand;

a result of the logical operation to be stored in a sense amplifier coupled to the first 3T memory cell or the second 3T memory cell; and

a first transistor and a second transistor coupled to the sense amplifier to be controlled to selectively transfer the result of the logical operation to one of the first 3T memory cell or the second 3T memory cell and a complement of the result of the logical operation to the other of the first 3T memory cell or the second 3T memory cell.

6. The apparatus of claim 5 , wherein the controller is further configured to cause performance of logical operations without transferring the first operand, the second operand, and a result of the logical operation out of the memory array.

7. The apparatus of claim 5 , wherein the inverted first logical operand and the second inverted logical operand are stored in the first 3T memory cell and the second 3T memory cell, respectively, after performance of the logical operation.

8. The apparatus of claim 5 , wherein the first 3T memory cell is configured to:

preserve the first charge corresponding to the first operand subsequent to performance of a write operation; and

preserve the second charge corresponding to the second operand subsequent to performance of the write operation.

9. The apparatus of claim 5 , wherein the first memory 3T cell is coupled to a first read row line and a first write row line of the array, and wherein the second memory cell is coupled to a second read row line and a second write row line of the array; and wherein the 3T first memory cell and the second memory cell are coupled to a same read digit line of the array.

10. The apparatus of claim 5 , wherein at least one of the first 3T memory cell and the second 3T memory cell is disposed within an area equal to or less than an area defined by a single transistor, single capacitor (1T1C) memory cell.

11. An apparatus, comprising:

a plurality of three-transistor (3T) memory cells coupled to respective write digit lines, read digit lines, read row lines, and write row lines; and

a controller coupled to the plurality of 3T memory cells, wherein the controller is configured to cause:

a first data value stored in a first 3T memory cell to be inverted;

a second data value stored in a second 3T memory cell to be inverted;

performance of a logical operation between the first inverted data value and the second inverted data value;

a result of the logical operation to be stored in a sense amplifier coupled to the first 3T memory cell or the second 3T memory cell; and

control operation of a first transistor and a second transistor coupled to the sense amplifier to selectively transfer the result of the logical operation to one of the first 3T memory cell or the second 3T memory cell and a complement of the result of the logical operation to the other of the first 3T memory cell or the second 3T memory cell.

12. The apparatus of claim 11 , wherein the sense amplifier is a sense amplifier of a plurality of sense amplifiers coupled to respective memory cells among the plurality of 3T memory cells.

13. The apparatus of claim 12 , wherein the controller is configured to cause:

the result of the logical operation to be shifted from the sense amplifier of the plurality of sense amplifiers to another sense amplifier among the plurality of sense amplifiers.

14. The apparatus of claim 12 , further comprising write complement transistors coupled to respective write digit lines, wherein the write complement transistors are operable to transfer a complement of a result of the logical operation via the write digit line.