Trench-gate insulated-gate bipolar transistors (IGBTs)
In a general aspect, an insulated gate bipolar transistor (IGBT) device can include an active region, an inactive region and a trench extending along a longitudinal axis in the active region. The IGBT can also include a first mesa defining a first sidewall of the trench and in parallel with the trench and a second mesa defining a second sidewall of the trench and in parallel with the trench. At least a portion of the first mesa can include an active segment of the IGBT device, and at least a portion of the second mesa can include an inactive segment of the IGBT device.
1. An insulated gate bipolar transistor (IGBT) device, comprising:
an active region;
an inactive region, the inactive region including a termination region;
a trench extending along a longitudinal axis in the active region;
a first mesa disposed in the active region, the first mesa defining a first sidewall of the trench and being in parallel with the trench; and
a second mesa disposed in the active region, the second mesa defining a second sidewall of the trench and being in parallel with the trench,
at least a portion of the first mesa including, in the active region, an active segment of the IGBT device, and
at least a portion of the second mesa including, in the active region, an inactive segment of the IGBT device, the inactive segment being defined by a dielectric material.
2. The IGBT device of claim 1 , wherein the active segment is a first active segment, the inactive segment is a first inactive segment, the at least a portion of the first mesa includes a first portion of the first mesa and the at least a portion of the second mesa includes a first portion of the second mesa, the IGBT device further including:
a second active segment included in a second portion of the second mesa in the active region; and
a second inactive segment included in a second portion of the first mesa in the active region.
3. The IGBT device of claim 1 , wherein the first mesa is an active mesa included in the active region and the second mesa is an inactive mesa included in the active region.
4. An insulated gate bipolar transistor (IGBT) device, comprising:
an active region;
an inactive region, the inactive region including a termination region;
a trench extending along a longitudinal axis in the active region;
a first mesa disposed in the active region, the first mesa defining a first sidewall of the trench and being in parallel with the trench;
a second mesa disposed in the active region, the second mesa defining a second sidewall of the trench and being in parallel with the trench;
a first active segment of the IGBT device included in a first portion of the first mesa in the active region;
a first inactive segment of the IGBT device included in a second portion of the first mesa in the active region, the first inactive segment being defined by a dielectric material;
a second active segment of the IGBT device included in a first portion of the second mesa in the active region; and
a second inactive segment of the IGBT device included in a second portion of the second mesa in the active region.
5. The IGBT device of claim 4 , wherein the termination region at least partially surrounds the active region.
6. The IGBT device of claim 4 , wherein the first mesa is inhomogeneous along the longitudinal axis.
7. The IGBT device of claim 6 , wherein the second mesa is inhomogeneous along the longitudinal axis.
8. The IGBT device of claim 4 , wherein:
the first portion of the first mesa includes a first portion of a semiconductor material having a first width, the first sidewall of the trench along the first portion of the first mesa having a first portion of the dielectric material of a first thickness disposed thereon; and
the second portion of the first mesa includes a second portion of the semiconductor material having a second width, the first sidewall of the trench along the second portion of the first mesa having a second portion of the dielectric material of a second thickness disposed thereon,
the first width being greater than the second width, and
the first thickness being less than the second thickness.
9. The IGBT device of claim 4 , wherein:
the first active segment of the IGBT device is a first emitter segment of the IGBT device; and
the second active segment of the IGBT device is a second emitter segment of the IGBT device.
10. The IGBT device of claim 4 , wherein:
the first portion of the first mesa is a semiconductor portion of the first mesa; and
the second portion of the first mesa is a dielectric portion of the first mesa.
11. The IGBT device of claim 10 , wherein the dielectric portion of the first mesa is a dielectric-filled portion of the first mesa.
12. The IGBT device of claim 10 , wherein the dielectric portion of the first mesa includes a thermally-grown oxide portion of the first mesa.
13. The IGBT device of claim 4 , wherein:
the first active segment and the second active segment of the IGBT device include a source implant; and
the first inactive segment and the second inactive segment of the IGBT device exclude the source implant.
14. An insulated gate bipolar transistor (IGBT) device, comprising:
an active region;
an inactive region, the inactive region including a termination region;
a trench extending along a longitudinal axis in the active region;
a first inhomogeneous mesa disposed in the active region, the first inhomogeneous mesa defining a first sidewall of the trench and being in parallel with the trench; and
a second inhomogeneous mesa disposed in the active region, the second inhomogeneous mesa defining a second sidewall of the trench and being in parallel with the trench,
a first portion of the first inhomogeneous mesa including, in the active region, a first active segment of the IGBT device;
a second portion of the first inhomogeneous mesa including, in the active region, a first inactive segment of the IGBT device;
a first portion of the second inhomogeneous mesa including, in the active region, a second active segment of the IGBT device; and
a second portion of the second inhomogeneous mesa including, in the active region, a second inactive segment of the IGBT device.
15. The IGBT device of claim 14 , wherein:
the first active segment of the IGBT device is a first emitter segment of the IGBT device and includes a source implant;
the second active segment of the IGBT device is a second emitter segment of the IGBT device and includes the source implant; and
the first inactive segment of the IGBT device and the second inactive segment of the IGBT device exclude the source implant.
16. The IGBT device of claim 14 , wherein:
the first portion of the first inhomogeneous mesa includes a first portion of a semiconductor material having a first width, the first sidewall of the trench along the first portion of the first inhomogeneous mesa having a first dielectric material portion of a first thickness disposed thereon; and
the second portion of the first inhomogeneous mesa includes a second portion of the semiconductor material having a second width, the first sidewall of the trench along the second portion of the first inhomogeneous mesa having a second dielectric material portion of a second thickness disposed thereon,
the first width being greater than the second width, and
the first thickness being less than the second thickness.
17. The IGBT device of claim 14 , wherein:
the first portion of the first inhomogeneous mesa is a semiconductor portion of the first inhomogeneous mesa; and
the second portion of the first inhomogeneous mesa is a dielectric portion of the first inhomogeneous mesa.
18. The IGBT device of claim 17 , wherein the dielectric portion of the first inhomogeneous mesa is a dielectric-filled portion of the first inhomogeneous mesa.