Integrated structures with conductive regions having at least one element from group 2 of the periodic table
Some embodiments include an integrated structure having a conductive region which contains one or more elements from Group 2 of the periodic table. Some embodiments include an integrated structure which has a conductive region over and directly against a base material. The conductive region includes one or more elements from Group 2 of the periodic table, and has a pair of opposing sidewalls along a cross-section. A capping material is over and directly against the conductive region. Protective material is along and directly against the sidewalls of the protective region.
1. An integrated structure comprising a conductive region which includes one or more elements from Group 2 of the periodic table; wherein the conductive region is over and directly against an adhesion material comprising one or more of nitrogen, carbon and silicon; and wherein the adhesion material consists essentially of silicon nitride, wherein an upper surface of the conductive region is directly against a capping material comprising one or more of nitrogen, oxygen, carbon and silicon.
2. The integrated structure of claim 1 wherein the capping material is conductive.
3. The integrated structure of claim 1 wherein the capping material is insulative.
4. The integrated structure of claim 1 wherein the capping material includes an oxide of at least one of said one or more elements from Group 2 of the periodic table.
5. The integrated structure of claim 4 wherein the capping material includes at least one of beryllium oxide, strontium oxide and magnesium oxide.
6. The integrated structure of claim 4 wherein the capping material includes beryllium oxide.
7. An integrated structure comprising a stack which includes a conductive region having a bottom surface, an entirety of the bottom surface being over and directly against an insulative base material, and which includes a capping material over and directly against the conductive region; the conductive region including one or more elements from Group 2 of the periodic table; the base material comprising one or more of nitrogen, carbon and silicon; and the capping material comprising oxygen and the one or more elements from Group 2 of the periodic table, and wherein the base material is insulative.
8. The integrated structure of claim 7 wherein said one or more elements from Group 2 of the periodic table include one or more of beryllium, magnesium and strontium.
9. The integrated structure of claim 7 wherein the conductive region consists of beryllium.
10. The integrated structure of claim 7 wherein the base material consists essentially of silicon nitride.
11. The integrated structure of claim 7 wherein the capping material is conductive.
12. An integrated structure comprising a stack which includes a conductive region having a bottom surface, an entirety of the bottom surface being over and directly against an insulative base material, and which includes a capping material over and directly against the conductive region; the conductive region consisting of one or more elements from Group 2 of the periodic table; the base material comprising one or more of nitrogen, carbon and silicon; and the capping material comprising the one or more elements from Group 2 of the periodic table and oxygen; and wherein the capping material is insulative.
13. An integrated structure comprising a stack which includes a conductive region over and directly against a base material, and which includes a capping material over and directly against the conductive region; the conductive region including one or more elements from Group 2 of the periodic table; the base material comprising one or more of nitrogen, carbon and silicon; and the capping material comprising one or more of nitrogen, oxygen, carbon and silicon; and wherein the capping material includes at least one of beryllium oxide, strontium oxide and magnesium oxide.
14. The integrated structure of claim 13 wherein the capping material includes beryllium oxide.
15. An integrated structure comprising:
a base material;
a conductive region over and directly against the base material; the conductive region including one or more elements from Group 2 of the periodic table; the conductive region having a pair of opposing sidewalls along a cross-section;
a capping material over and directly against the conductive region;
a protective material along and directly against the sidewalls of the conductive region; and
wherein the protective material is a same composition as the capping material.
16. An integrated structure comprising:
a base material;
a conductive region over and directly against the base material; the conductive region including one or more elements from Group 2 of the periodic table; the conductive region having a pair of opposing sidewalls along a cross-section;
a capping material over and directly against the conductive region;
a protective material along and directly against the sidewalls of the conductive region; and
wherein the conductive region includes beryllium, and wherein the protective material comprises beryllium oxide.
17. The integrated structure of claim 16 wherein the capping material also comprises beryllium oxide.
18. An integrated structure comprising:
a base material;
a conductive region over and directly against the base material; the conductive region including one or more elements from Group 2 of the periodic table; the conductive region having a pair of opposing sidewalls along a cross-section;
a capping material over and directly against the conductive region;
a protective material along and directly against the sidewalls of the conductive region; and
wherein the base material is conductive; and wherein the capping material and the protective material are insulative.
19. An integrated structure comprising:
a base material;
a conductive region over and directly against the base material; the conductive region including one or more elements from Group 2 of the periodic table; the conductive region having a pair of opposing sidewalls along a cross-section;
a capping material over and directly against the conductive region;
a protective material along and directly against the sidewalls of the conductive region; and
wherein the base material, the capping material and the protective material are all insulative.
20. The integrated structure of claim 19 wherein the base material, the capping material and the protective material are all a same composition as one another.
21. The integrated structure of claim 20 wherein the base material, the capping material and the protective material all comprise silicon nitride.
22. An integrated structure comprising:
a base material;
a conductive region over and directly against the base material; the conductive region including one or more elements from Group 2 of the periodic table; the conductive region having a pair of opposing sidewalls along a cross-section;
a capping material over and directly against the conductive region;
a protective material along and directly against the sidewalls of the conductive region; and
wherein the base material comprises titanium nitride; and wherein the capping material and the protective material both comprise silicon nitride.