Plasma Processing Apparatus

1 . A plasma processing apparatus, comprising:

a processing chamber;

a pedestal operable to support a workpiece in the processing chamber;

a plasma chamber, the plasma chamber defining an active plasma generation region along a vertical surface of a dielectric sidewall of the plasma chamber;

a separation grid positioned between the processing chamber and the plasma chamber along a vertical direction; and

a plurality of induction coils extending about the plasma chamber, each of the plurality of induction coils disposed at a different position along the vertical surface of the dielectric sidewall, each of the plurality of induction coils operable to generate a plasma in the active plasma generation region along the vertical surface of the dielectric sidewall of the plasma chamber.

2 . The plasma processing apparatus of claim 1 , further comprising a radio frequency power generator coupled to each of the plurality of induction coils, the radio frequency power generator operable to energize one or more of the plurality of induction coils to generate the plasma.

3 . The plasma processing apparatus of claim 1 , wherein the plurality of induction coils comprises a first induction coil positioned at a first vertical position adjacent the vertical surface of the dielectric sidewall and a second induction coil positioned at a second vertical position adjacent the vertical surface of the dielectric sidewall.

4 . The plasma processing apparatus of claim 3 , wherein the first induction coil is coupled to a first radio frequency power generator and the second induction coil is coupled to a second radio frequency power generator.

5 . The plasma processing apparatus of claim 1 , wherein at least a portion of the active plasma generation region in the plasma chamber is defined by a gas injection insert.

6 . The plasma processing apparatus of claim 5 , wherein the gas injection insert comprises a peripheral portion and a center portion, the center portion extending a vertical distance beyond the peripheral portion.

7 . The plasma processing apparatus of claim 1 , wherein the separation grid comprises a plurality of holes operable to allow passage of neutral particles generated in a plasma to the processing chamber.

8 . The plasma processing apparatus of claim 7 , wherein the separation grid is operable to filter one or more ions generated in the plasma.

9 . The plasma processing system of claim 1 , wherein the apparatus comprises a gas injection port operable to inject a process gas adjacent to the vertical surface of the dielectric sidewall.

10 . A plasma processing apparatus, comprising:

a processing chamber;

a plasma chamber, the plasma chamber comprising a dielectric sidewall;

a separation grid positioned between the processing chamber and the plasma chamber along a vertical direction;

wherein the dielectric sidewall comprises a first portion and a second portion, the second portion of the dielectric sidewall being adjacent to the separation grid, the second portion flaring from the first portion of the dielectric sidewall;

wherein the apparatus comprises a first induction coil positioned about the first portion of the dielectric sidewall, the apparatus comprising a second induction coil positioned adjacent to the second portion of the dielectric sidewall.

11 . The plasma processing system of claim 10 , wherein the plasma chamber has a width along a horizontal direction, the width of the plasma chamber at the second portion of the dielectric sidewall being greater than the width of the plasma chamber at the first portion of the dielectric sidewall.

12 . The plasma processing system of claim 10 , further comprising a grounded Faraday shield positioned between the first induction coil and the first portion of the dielectric sidewall and between the second induction coil and the second portion of the dielectric sidewall.

13 . The plasma processing apparatus of claim 10 , wherein the grounded Faraday shield is a unitary structure.

14 . The plasma processing apparatus of claim 13 , wherein a density of spaces in the grounded Faraday shield adjacent the first portion of the dielectric sidewall is different than a density of spaces of the grounded Faraday shield adjacent the second portion of the dielectric sidewall.

15 . The plasma processing apparatus of claim 10 , wherein the apparatus comprises a gas injection insert disposed within the plasma chamber.

16 . The plasma processing apparatus of claim 10 , wherein the apparatus comprises a gas injection port operable to inject a process gas adjacent to the vertical surface of the dielectric sidewall.

17 . A method for processing a workpiece, comprising:

placing the workpiece in a processing chamber, the processing chamber being separated from a plasma chamber by a separation grid along a vertical direction;

providing a process gas into the plasma chamber via a gas injection port proximate a vertical surface of a dielectric sidewall;

energizing a first induction coil proximate the vertical surface of the dielectric sidewall with radio frequency energy;

energizing a second induction coil proximate the separation grid with radio frequency energy; and

flowing neutral particles generated in a plasma through the separation grid to the workpiece within the processing chamber.

18 . The method of claim 17 , wherein the second induction coil is located proximate the vertical surface of the dielectric sidewall.

19 . The method of claim 17 , wherein the dielectric sidewall comprises a first portion and a second portion, the second portion of the dielectric sidewall flaring from the first portion of the dielectric sidewall.

20 . The method of claim 19 , wherein the second induction coil is located proximate the second portion of the dielectric sidewall.