Acoustic wave device, high-frequency front end circuit, and communication device
An acoustic wave device includes a high acoustic velocity support substrate defining and functioning as a high acoustic velocity member, a low acoustic velocity film, a piezoelectric film, and an IDT electrode that are laminated in this order. When a wavelength of an acoustic wave determined by an electrode finger cycle of the IDT electrode is represented by λ, a film thickness of the piezoelectric film is about 1.5λ or more and about 3.5λ or less. The acoustic velocity of a bulk wave propagating in the high acoustic velocity support substrate is higher than the acoustic velocity of an acoustic wave propagating in the piezoelectric film. The acoustic velocity of a bulk wave propagating in the low acoustic velocity film is lower than the acoustic velocity of an acoustic wave propagating in the piezoelectric film.
1. An acoustic wave device comprising:
a piezoelectric film;
a high acoustic velocity member in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an acoustic wave propagating in the piezoelectric film;
a low acoustic velocity film laminated on the high acoustic velocity member and in which an acoustic velocity of a bulk wave propagating therein is lower than the acoustic velocity of an acoustic wave propagating in the piezoelectric film, the piezoelectric film being laminated on the low acoustic velocity film;
a bonding layer; and
an IDT electrode provided on one surface of the piezoelectric film; wherein
when a wavelength of an acoustic wave which is determined by an electrode finger cycle of the IDT electrode is represented by λ, a film thickness of the piezoelectric film is about 1.5λ or more and about 3.5λ or less;
the high acoustic velocity member includes a high acoustic velocity support substrate; and
the low acoustic velocity film is made of silicon oxide, the bonding layer is provided at a position in the low acoustic velocity film, the low acoustic velocity film includes a first low acoustic velocity film layer located on the bonding layer at a piezoelectric film side and a second low acoustic velocity film layer located on the bonding layer at a side opposite to the piezoelectric film, and when the wavelength of an acoustic wave to be used by the acoustic wave device is represented by λ, a film thickness of the first low acoustic velocity film layer is about 0.12λ or more.
2. The acoustic wave device according to claim 1 , wherein the high acoustic velocity support substrate is a silicon substrate.
3. The acoustic wave device according to claim 1 , wherein the bonding layer includes one of a metal oxide layer and a metal nitride layer.
4. The acoustic wave device according to claim 1 , wherein the bonding layer includes a Ti layer, and a film thickness of the Ti layer is about 0.4 nm or more and about 2.0 nm or less.
5. The acoustic wave device according to claim 4 , wherein the film thickness of the Ti layer is about 0.4 nm or more and about 1.2 nm or less.
6. The acoustic wave device according to claim 1 , wherein the piezoelectric film is made of LiTaO 3 .
7. The acoustic wave device according to claim 1 , wherein the film thickness of the first low acoustic velocity film layer is about 0.22λ or more.
8. A high-frequency front end circuit comprising:
the acoustic wave device according to claim 1 ; and
a power amplifier.
9. A communication device comprising:
the high-frequency front end circuit according to claim 8 ;
an RF signal processing circuit; and
a baseband signal processing circuit.