Semiconductor device with stacked terminals
A semiconductor device includes housing, a substrate, a first semiconductor die, a second semiconductor die, a first terminal, and a second terminal. The first terminal in a first terminal plane couples to the first semiconductor die. The second terminal has a contact portion in a contact portion plane within the housing that couples to the second semiconductor die, a main portion in a main portion plane partially within the housing, the main portion plane substantially parallel to and offset from the first terminal plane, and the main portion plane substantially parallel to and offset from the contact portion plane, and an offsetting portion within the housing and that connects the contact portion to the main portion. At least some of the main portion of the second terminal overlaps the first terminal and the first terminal and the main portion of the second terminal extend from the housing in a same direction.
1. A semiconductor device comprising:
a housing;
a substrate within the housing;
a first semiconductor die mounted on the substrate within the housing;
a first busbar having a first end coupled to the first semiconductor die and a second end extending from the housing;
a second semiconductor die mounted on the substrate within the housing;
a second busbar having a first side coupled to the second semiconductor die and a second side at least partially exposed at a surface of the housing;
a first terminal outside the housing in a first terminal plane having:
a first portion connected to the first busbar; and
a second portion; and
a second terminal outside the housing and having:
a contact portion in a contact portion plane connected to the second side of the second busbar;
a main portion in a main portion plane that is substantially parallel to the first terminal plane and that is substantially parallel to and offset from the contact portion plane; and
an offsetting portion that connects the contact portion to the main portion,
wherein the second portion of the first terminal substantially overlaps the main portion of the second terminal and wherein the second portion of the first terminal and the main portion of the second terminal reside on a same side of the housing.
2. The semiconductor device of claim 1 , wherein the first terminal plane and the contact portion plane are substantially co-planar.
3. The semiconductor device of claim 1 , further comprising an electric insulator sandwiched between the first terminal and the main portion of the second terminal.
4. The semiconductor device of claim 3 , wherein the main portion of the second terminal is stacked above the first terminal.
5. The semiconductor device of claim 4 , wherein the electric insulator extends beyond an end of the first terminal adjacent the housing.
6. The semiconductor device of claim 1 , wherein the substrate comprises a metal, ceramic, metal sandwich.
7. The semiconductor device of claim 1 , wherein the first busbar and the second busbar are substantially co-planar.
8. The semiconductor device of claim 1 , wherein:
the first semiconductor die includes at least one insulated-gate bipolar transistor (IGBT); and
the second semiconductor die includes at least one IGBT.
9. The semiconductor device of claim 1 , wherein:
the first busbar is soldered to the first semiconductor die; and
the second busbar is soldered to the second semiconductor die.
10. The semiconductor device of claim 1 , wherein:
the first terminal is soldered to the first busbar; and
the second terminal is soldered to the second busbar.
11. The semiconductor device of claim 1 , wherein the housing is an over molded housing.