Semiconductor power module
A semiconductor power module including an insulating substrate having one surface and another surface, an output side terminal arranged at a one surface side of the insulating substrate, a first power supply terminal arranged at the one surface side of the insulating substrate, a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at an other surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate, a first switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the first power supply terminal, and a second switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the second power supply terminal.
1. A semiconductor power module comprising;
an insulating substrate having one surface and another surface;
a supporting substrate having a face-surface which faces the one surface of the insulating substrate;
a first power supply terminal that is arranged on a one surface side of the insulating substrate;
a second power supply terminal that is arranged on an another surface side of the insulating substrate;
a first switching device, a second switching device and an output terminal that are arranged on the face-surface side of the supporting substrate; and
a resin that partially covers the first power supply terminal, the second power supply terminal and the output terminal so as to define an exposed portion of the first power supply terminal, an exposed portion of the second power supply terminal and an exposed portion of the output terminal,
wherein a current direction in the second power supply terminal is made opposite to a current direction in the first power supply terminal across the insulating substrate, and
wherein the insulating substrate has a removed region where heat generated from the first switching device and the second switching device is dissipated to the another surface side of the insulating substrate.
2. The semiconductor power module according to claim 1 , further comprising:
conductor patterns that are formed on the one surface side of the insulating substrate and the face-surface side of the supporting substrate and that are electrically connected to the first power supply terminal, the first switching device and the output terminal; and
a conductor pattern that is formed on the another surface side of the insulating substrate and that is electrically connected to the second power supply terminal, the second switching device and the output terminal.
3. The semiconductor power module according to claim 1 ,
wherein, outside the resin, a distance between an exposed portion of the insulating substrate and the exposed portion of the second power supply terminal outside the resin is not less than 2 mm.
4. The semiconductor power module according to claim 1 ,
wherein a high voltage is to be applied to the first power supply terminal, and
a low voltage is to be applied to the second power supply terminal.
5. The semiconductor power module according to claim 1 ,
wherein the insulating substrate has a thickness of not more than 5 mm.
6. The semiconductor power module according to claim 1 ,
wherein the first switching devices and the second switching devices are arranged on the face-surface side of the supporting substrate.
7. The semiconductor power module according to claim 1 ,
wherein the output terminal is arranged on the same straight line as the first power supply terminal and the second power supply terminal as viewed in plane.
8. The semiconductor power module according to claim 1 ,
wherein the output terminal has a thickness greater than a thickness of the first power supply terminal or a thickness of the second power supply terminal.
9. The semiconductor power module according to claim 8 ,
wherein the output terminal has a thickness not less than a total value of the thickness of the first power supply terminal and the thickness of the second power supply terminal.
10. The semiconductor power module according to claim 6 ,
wherein the first switching device includes a MISFET, an IGBT or a BJT, and the second switching device includes a MISFET, an IGBT or a BJT.
11. The semiconductor power module according to claim 10 ,
wherein the first switching device includes the MISFET, the IGBT or the BJT that is formed in a Si substrate, a SiC substrate or a wide band gap type semiconductor substrate, and
the second switching device includes the MISFET, the IGBT or the BJT that is formed in a Si substrate, a SiC substrate or a wide band gap type semiconductor substrate.
12. The semiconductor power module according to claim 6 ,
wherein the first switching device and the second switching device form a half-bridge circuit.
13. The semiconductor power module according to claim 6 , further comprising:
a first control terminal for the first switching device; and
a second control terminal for the second switching device;
wherein the resin partially covers the first control terminal and the second control terminal so as to define an exposed portion of the first control terminal and an exposed portion of the second control terminal.
14. The semiconductor power module according to claim 13 ,
wherein the first control terminal is exposed from the resin in a direction different from directions in which the first power supply terminal, the second power supply terminal and the output terminal are exposed from the resin, and
the second control terminal is exposed from the resin in a direction different from directions in which the first power supply terminal, the second power supply terminal and the output terminal are exposed from the resin.