Semiconductor package with chamfered corners and related methods
View Patent ↗Implementations of image sensors may include a die having either a rounded corner or a chamfered corner edge, and an optically transmissive cover coupled to the die. The optically transmissive cover may include either a rounded corner or a chamfered corner edge that corresponds with either the rounded corner or the chamfered corner edge of the die.
1. A method for forming an image sensor device, comprising:
forming a first plurality of openings in an optically transmissive cover;
coupling the optically transmissive cover to a wafer comprising a plurality of die;
etching a second plurality of openings through the wafer, the second plurality of openings aligning with the first plurality of openings in the optically transmissive cover; and
singulating the optically transmissive cover and the wafer into a plurality of image sensor devices, wherein each image sensor device includes one of a rounded corner or a chamfered corner edge.
2. The method of claim 1 , further comprising etching one or more through silicon vias while etching the second plurality of openings through the wafer.
3. The method of claim 1 , wherein each opening of the first plurality of openings comprises a perimeter in a closed four-sided shape.
4. The method of claim 1 , wherein each opening of the first plurality of openings comprises a perimeter in a circular shape.
5. The method of claim 1 , wherein each opening of the first plurality of openings comprises a perimeter in an elliptical shape.
6. The method of claim 1 , wherein the optically transmissive cover comprises glass.
7. The method of claim 1 , wherein the first plurality of openings are formed through etching.
8. The method of claim 1 , further comprising aligning the first plurality of openings of the optically transmissive cover with a plurality of corners of the plurality of die.
9. The method of claim 1 , further comprising etching the second plurality of holes through the wafer while using the optically transmissive cover as a guide.
10. A method for forming an image sensor device, comprising:
forming a first plurality of openings in an optically transmissive cover;
coupling the optically transmissive cover to a wafer comprising a plurality of die;
using the optically transmissive cover as a guide, etching a second plurality of openings through the wafer; and
singulating the optically transmissive cover and the wafer into a plurality of image sensor devices, wherein each image sensor device includes one of a rounded corner or a chamfered corner edge.
11. The method of claim 10 , wherein each opening of the first plurality of openings comprises a perimeter in a closed four-sided shape.
12. The method of claim 10 , wherein each opening of the first plurality of openings comprises a perimeter in a circular shape.
13. The method of claim 10 , wherein each opening of the first plurality of openings comprises a perimeter in an elliptical shape.
14. The method of claim 10 , wherein the optically transmissive cover comprises glass.
15. The method of claim 10 , wherein the second plurality of openings is formed through a deep reactive ion etching process.