Semiconductor arrangement with fins having multiple heights and a dielectric layer recessed in the substrate
Among other things, one or semiconductor arrangements, and techniques for forming such semiconductor arrangements are provided. An etch sequence is performed to form a first etched region over a planar region of a semiconductor arrangement. The first etched region exposes a planar structure, such as an alignment mark used for alignment during semiconductor fabrication. The etch sequence forms a second etched region over a semiconductor fin region of the semiconductor arrangement. In an embodiment, the etch sequence forms a first trench, a first fin nub and a first pillar in the semiconductor fin region, where the first trench is formed in a semiconductor substrate of the semiconductor fin region. A multi-depth STI structure is formed over at least one of the first trench, the first fin nub, or the first pillar.
1. A semiconductor arrangement, comprising:
a first semiconductor fin protruding from a substrate and having a first height;
a first semiconductor fin nub protruding from the substrate and having a second height less than the first height;
a dielectric layer in contact with a sidewall of the first semiconductor fin, a sidewall of the first semiconductor fin nub, and a sidewall of the substrate; and
an alignment mark overlaying the substrate, wherein the dielectric layer is in contact with a sidewall of the alignment mark.
2. The semiconductor arrangement of claim 1 , wherein the substrate defines a trench disposed between the first semiconductor fin and the first semiconductor fin nub.
3. The semiconductor arrangement of claim 2 , wherein the dielectric layer is disposed within the trench.
4. The semiconductor arrangement of claim 1 , comprising:
a first semiconductor pillar disposed between the first semiconductor fin and the first semiconductor fin nub, wherein:
the first semiconductor pillar has a third height less than the first height and greater than the second height, and
the dielectric layer is in contact with a sidewall of the first semiconductor pillar.
5. The semiconductor arrangement of claim 1 , comprising:
a gate structure disposed over the first semiconductor fin and adjacent the sidewall of the first semiconductor fin.
6. The semiconductor arrangement of claim 5 , wherein the first semiconductor fin nub is spaced apart from the gate structure by the dielectric layer.
7. The semiconductor arrangement of claim 1 , wherein:
the alignment mark defines a trench, and
the dielectric layer is disposed within the trench.
8. A semiconductor arrangement, comprising:
a first semiconductor fin protruding from a substrate and having a first height;
a first semiconductor pillar protruding from the substrate and having a second height less than the first height;
a first semiconductor fin nub protruding from the substrate and having a third height less than the second height, wherein the substrate defines a trench disposed between the first semiconductor fin and the first semiconductor fin nub; and
a dielectric layer, wherein:
the dielectric layer is adjacent a sidewall of the first semiconductor fin,
the dielectric layer is adjacent a sidewall of the first semiconductor pillar and overlies a top surface of the first semiconductor pillar, and
the dielectric layer is adjacent a sidewall of the first semiconductor fin nub.
9. The semiconductor arrangement of claim 8 , wherein the dielectric layer overlies a top surface of the first semiconductor fin nub.
10. The semiconductor arrangement of claim 8 , wherein the top surface of the first semiconductor pillar has a first profile and a top surface of the first semiconductor fin nub has a second profile.
11. The semiconductor arrangement of claim 8 , wherein the top surface of the first semiconductor pillar is substantially planar and a top surface of the first semiconductor fin nub is non-planar.
12. The semiconductor arrangement of claim 8 , wherein a first portion of the first semiconductor fin protrudes above a top surface of the dielectric layer.
13. The semiconductor arrangement of claim 12 , comprising:
a gate structure partially surrounding the first portion of the first semiconductor fin.
14. The semiconductor arrangement of claim 8 , wherein the dielectric layer is disposed within the trench.
15. A semiconductor arrangement, comprising:
a first semiconductor fin protruding from a substrate and having a first height;
a first semiconductor fin nub protruding from the substrate and having a second height less than the first height; and
a dielectric layer disposed over the first semiconductor fin nub and adjacent the first semiconductor fin, wherein:
the dielectric layer extends below a bottom surface of the first semiconductor fin and the first semiconductor fin nub, and
the dielectric layer is in contact with a top surface of the first semiconductor fin nub.
16. The semiconductor arrangement of claim 15 , comprising:
an alignment mark overlaying the substrate, wherein the dielectric layer is in contact with a sidewall of the alignment mark.
17. A semiconductor arrangement, comprising:
a first semiconductor fin protruding from a substrate and having a first height;
a first semiconductor fin nub protruding from the substrate and having a second height less than the first height;
a dielectric layer disposed over the first semiconductor fin nub and adjacent the first semiconductor fin, wherein the dielectric layer extends below a bottom surface of the first semiconductor fin and the first semiconductor fin nub; and
an alignment mark overlaying the substrate, wherein the dielectric layer is in contact with a sidewall of the alignment mark.
18. The semiconductor arrangement of claim 17 , wherein:
the alignment mark defines a trench, and
the dielectric layer is disposed within the trench.
19. The semiconductor arrangement of claim 17 , wherein the substrate defines a trench disposed between the first semiconductor fin and the first semiconductor fin nub.
20. The semiconductor arrangement of claim 19 , wherein the dielectric layer is disposed within the trench.