Methods of forming circuit-protection devices
Methods of forming a circuit-protection device include forming a dielectric having a first thickness and a second thickness greater than the first thickness over a semiconductor, forming a conductor over the dielectric, and patterning the conductor to retain a portion of the conductor over a portion of the dielectric having the second thickness, and to retain substantially no portion of the conductor over a portion of the dielectric having the first thickness, wherein the retained portion of the conductor defines a control gate of a field-effect transistor of the circuit-protection device.
1. A method of forming a circuit-protection device, comprising:
forming a dielectric having a first thickness and having a second thickness, greater than the first thickness, over a semiconductor;
forming the dielectric further having a third thickness greater than the second thickness, over the semiconductor;
forming a conductor over the dielectric;
patterning the conductor to retain a first portion of the conductor over a portion of the dielectric having the second thickness, and to retain substantially no portion of the conductor over a portion of the dielectric having the first thickness; and
patterning the conductor to further retain a second portion of the conductor over a portion of the dielectric having the third thickness;
wherein the retained first portion of the conductor defines a control gate of a first field-effect transistor of the circuit-protection device; and
wherein the retained second portion of the conductor defines a control gate of a second field-effect transistor of the circuit-protection device connected in series with the first field-effect transistor.
2. A method of forming a circuit-protection device, comprising:
forming a first dielectric over a first portion of a semiconductor;
forming a second dielectric over the first portion of the semiconductor, over a second portion of the semiconductor, and over a third portion of the semiconductor;
removing a portion of the second dielectric over the third portion of the semiconductor;
forming a third dielectric over the first portion of the semiconductor, over the second portion of the semiconductor, and over the third portion of the semiconductor;
forming a conductor over the third dielectric; and
patterning the conductor to retain a first portion of the conductor over the first portion of the semiconductor and a second portion of the conductor over the second portion of the semiconductor.
3. The method of claim 2 , further comprising removing a portion of the first dielectric prior to forming the second dielectric.
4. The method of claim 2 , wherein forming the second dielectric comprises forming the second dielectric to comprise the first dielectric, and wherein forming the third dielectric comprises forming the third dielectric to comprise the second dielectric.
5. The method of claim 2 , further comprising removing a portion of the third dielectric over the third portion of the semiconductor.
6. The method of claim 5 , wherein removing the portion of the third dielectric over the third portion of the semiconductor comprises removing an entire portion of the third dielectric over the third portion of the semiconductor.
7. The method of claim 2 , further comprising patterning the conductor to retain substantially no portion of the conductor over the third portion of the semiconductor.