Plasma Strip Tool With Multiple Gas Injection Zones
Plasma processing apparatus for processing a workpiece are provided. In one example embodiment, a plasma processing apparatus for processing workpiece includes a processing chamber, a plasma chamber separated from the processing chamber by a separation grid, an inductively coupled plasma source configured to generate a plasma in the plasma chamber. The apparatus includes a pedestal disposed within the processing chamber configured to support a workpiece. The apparatus a first gas injection zone configured to inject a process gas into the plasma chamber at a first flat surface, and a second gas injection zone configured to inject a process gas into the plasma chamber at a second flat surface. The separation grid has a plurality of holes configured to allow the passage of neutral particles generated in the plasma to the processing chamber.
1 . A plasma processing apparatus for processing a workpiece, the plasma processing apparatus comprising:
a processing chamber;
a plasma chamber separated from the processing chamber by a separation grid;
an inductively coupled plasma source configured to generate a plasma in the plasma chamber;
a pedestal disposed within the processing chamber, the pedestal configured to support a workpiece;
a first gas injection zone configured to inject a process gas into the plasma chamber at a first flat surface; and
a second gas injection zone configured to inject a process gas into the plasma chamber at a second flat surface;
wherein the separation grid has a plurality of holes configured to allow the passage of neutral particles generated in the plasma to the processing chamber.
2 . The plasma processing apparatus of claim 1 , wherein the first flat surface is associated with a top plate of the plasma chamber and the second flat surface is associated with a gas injection insert disposed within the plasma chamber.
3 . The plasma processing apparatus of claim 2 , wherein the gas injection insert has a peripheral portion and a center portion, the center portion extending a vertical distance past the peripheral portion
4 . The plasma processing apparatus of claim 1 , further comprising a common gas source coupled to the first gas injection zone and the second gas injection zone.
5 . The plasma processing apparatus of claim 1 , further comprising a first gas source coupled to the first gas injection zone and a second gas source coupled to the second gas injection zone.
6 . The plasma processing apparatus of claim 1 , wherein the first and second gas injection zones are operable to provide different gases to the plasma chamber.
7 . The plasma processing apparatus of claim 3 , wherein the gas injection insert defines a gas injection channel proximate a side wall of the plasma chamber.
8 . The plasma processing apparatus of claim 1 , wherein the separation grid has a gas injection aperture formed in a center portion of the separation grid, the gas injection aperture configured to allow the injection of gas onto the workpiece.
9 . The plasma processing apparatus of claim 8 , wherein the gas injection aperture is coaxially aligned with the center portion of the gas injection insert.
10 . The plasma processing apparatus of claim 8 , wherein the gas injection aperture is coupled to a gas channel passing through a center portion of a gas injection insert.
11 . The plasma processing apparatus of claim 8 , wherein the gas injection aperture is coupled to an independent gas source.
12 . The plasma processing apparatus of claim 1 , wherein the separation grid has a gas injection aperture formed in a peripheral portion of the separation grid, the gas injection aperture configured to allow the injection of gas onto the workpiece
13 . The plasma processing apparatus of claim 12 , wherein the gas injection aperture is coupled to an independent gas source.
14 . The plasma processing apparatus of claim 1 , wherein the separation grid has a first gas injection aperture formed in a center portion of the separation grid and a second gas injection aperture formed in a peripheral portion of the separation grid, the first gas injection aperture and the second gas injection aperture configured to allow the injection of gas onto workpiece.
15 . The plasma processing apparatus of claim 14 , wherein the first gas injection aperture and the second gas injection aperture are coupled to a common gas source.
16 . The plasma processing apparatus of claim 14 , wherein the first gas injection aperture and the second gas injection aperture are coupled to independent gas sources.
17 . A plasma processing apparatus for processing workpiece, the plasma processing apparatus comprising:
a processing chamber;
a plasma chamber separated from the processing chamber by a separation grid;
an inductively coupled plasma source configured to generate a plasma in the plasma chamber;
a pedestal disposed within the processing chamber, the pedestal configured to support a workpiece;
wherein the plasma processing apparatus comprises a first gas injection aperture formed in a center portion of the separation grid and a second gas injection aperture formed in a peripheral portion of the separation grid, the first gas injection aperture and the second gas injection aperture configured to allow the injection of gas onto the workpiece.
18 . The plasma processing apparatus of claim 17 , wherein the gas injection aperture is coupled to a gas channel passing through a center portion of a gas injection insert.
19 . The plasma processing apparatus of claim 17 , wherein the first gas injection aperture and the second gas injection aperture are coupled to a common gas source.
20 . The plasma processing apparatus of claim 17 , wherein the first gas injection aperture and the second gas injection aperture are coupled to independent gas sources.