Memory cells with asymmetrical electrode interfaces
Methods, systems, and devices for memory cells with asymmetrical electrode interfaces are described. A memory cell with asymmetrical electrode interfaces may mitigate shorts in adjacent word lines, which may be leveraged for accurately reading a stored value of the memory cell. The memory device may include a self-selecting memory component with a top surface area in contact with a top electrode and a bottom surface area in contact with a bottom electrode, where the top surface area in contact with the top electrode is a different size than the bottom surface area in contact with the bottom electrode.
1. A memory device, comprising:
a top electrode;
a bottom electrode; and
a self-selecting memory component having a first contact area of a top surface in direct contact with the top electrode and a second contact area of a bottom surface opposite the top surface, wherein the first contact area in direct contact with the top electrode is a different size than the second contact area in direct contact with the bottom electrode,
wherein the top electrode includes a third contact area of a top surface in direct contact with a digit line, the third contact area of the top surface extending from a first side surface of the top electrode to a second side surface of the top electrode.
2. The memory device of claim 1 , further comprising:
a dielectric liner, formed in a first direction, in contact with two side surfaces of the self-selecting memory component along the first direction.
3. The memory device of claim 1 , wherein a dielectric liner is in direct contact with the top surface of the self-selecting memory component and two side surfaces of the top electrode in a first direction.
4. The memory device of claim 1 , wherein a dielectric liner is in direct contact with the top surface of the self-selecting memory component, two side surfaces of the top electrode, and two side surfaces of the digit line that extends in a second direction.
5. The memory device of claim 1 , wherein the top surface of the self-selecting memory component has a first area equal to a second area of the bottom surface of the self-selecting memory component.
6. The memory device of claim 1 , wherein the first contact area of the top surface of the self-selecting memory component is less than the second contact area of the bottom surface in electrical contact with the bottom electrode.
7. The memory device of claim 1 , wherein a length of the top electrode is less than a length of the self-selecting memory component in a first direction.
8. The memory device of claim 1 , wherein a length of the top electrode is less than a length of the bottom electrode in a first direction.
9. The memory device of claim 1 , wherein a length of the top electrode and a dielectric liner is equal to a length of the self-selecting memory component in a first direction.
10. The memory device of claim 1 , wherein a dielectric liner is in contact with two side surfaces of the self-selecting memory component and two side surfaces of the top electrode in a first direction.
11. The memory device of claim 1 , wherein a dielectric liner is in contact with two side surfaces of the self-selecting memory component, two side surfaces of the top electrode, and two side surfaces of the digit line that extends in a second direction.
12. The memory device of claim 1 , wherein the first contact area of the top surface in electrical contact with the top electrode is greater than the second contact area of the bottom surface in electrical contact with the bottom electrode.
13. The memory device of claim 1 , wherein an area of the bottom surface of the self-selecting memory component is greater than an area of the top surface of the bottom electrode.
14. The memory device of claim 1 , wherein the bottom electrode tapers from a bottom surface to a top surface opposite the bottom surface.
15. The memory device of claim 1 , wherein a length between inner surfaces of a dielectric liner in contact with two side surfaces of the top electrode is greater than a length of the bottom electrode in a first direction, wherein a length between inner surfaces of a dielectric liner in contact with two side surfaces of the self-selecting memory component is greater than the length of the bottom electrode in the first direction.