IP Library Granted Patent US 10,428,242
Granted Patent B2
US 10,428,242 · App. 15/897,261 · Granted Oct 1, 2019

Slurry composition for chemical mechanical polishing

Inventors: Doo-sik Moon (Hwaseong-si, KR); Sang-hyun Park (Hwaseong-si, KR); Bo-un Yoon (Seoul, KR); Ho-young Kim (Seongnam-si, KR); Se-jung Park (Hwaseong-si, KR); Jae-hak Lee (Yongin-si, KR); Jin-myung Hwang (Changwon-si, KR)
Assignees: SAMSUNG ELECTRONICS CO., LTD.; K.C. TECH Co., Ltd.
C09G1/02C09K3/1409C09K3/1463
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Quick Facts
Patent No.
US 10,428,242
App. No.
15/897,261
Granted
Oct 1, 2019
Kind
B2
Abstract

A slurry composition for chemical mechanical polishing, the slurry composition including ceramic polishing particles; a dispersion agent; a pH control agent and an additive having affinity with silicon nitride.

Claims (44)

1. A slurry composition for chemical mechanical polishing, the slurry composition comprising:

ceramic polishing particles;

a dispersion agent;

a pH control agent and

an additive having affinity with silicon nitride, the additive having affinity with silicon nitride including a group that forms a covalent bond with an amine group of silicon nitride or an electrostatic interaction bond with an amine group of silicon nitride, the group not forming a hydrogen bond with a hydroxyl group in the dispersion agent.

2. The slurry composition for chemical mechanical polishing as claimed in claim 1 , wherein:

the additive having affinity with silicon nitride includes an aldehyde group additive, a sulfonic acid group additive, or an alkyl halide group additive,

the aldehyde group additive forms the covalent bond between an aldehyde group thereof and the amine group of silicon nitride,

the sulfonic acid group additive forms the electrostatic interaction bond between a sulfonic group thereof and the amine group of silicon nitride, and

the alkyl halide group additive forms the electrostatic interaction bond between a halogen thereof and the amine group of silicon nitride.

3. The slurry composition for chemical mechanical polishing as claimed in claim 2 , wherein the additive having affinity with silicon nitride includes decyl aldehyde, dodecyl aldehyde, tetradecyl aldehyde, hexadecyl aldehyde, glutaraldehyde, or polyacrolein.

4. The slurry composition for chemical mechanical polishing as claimed in claim 2 , wherein the additive having affinity with silicon nitride includes policresulen and a salt thereof, polystyrene sulfonate and a salt thereof, or polyvinyl sulfonate and a salt thereof.

5. The slurry composition for chemical mechanical polishing as claimed in claim 2 , wherein the additive having affinity with silicon nitride includes 1-chloroheptane, 1-chlorooctane, 1-chlorononane, 1-chlorodecane, 1-chlorododecane, 1-chlorotetradecane, 1-chlorohexadecane, polyvinyl chloride, 1-bromoheptane, 1-bromooctane, 1-bromononane, 1-bromodecane, 1-bromododecane, 1-bromotetradecane, 1-bromohexadecane, 1-iodoheptane, 1-iodooctane, 1-iodononane, 1-iododecane, 1-iodododecane, 1-iodotetradecane, or 1-iodohexadecane.

6. The slurry composition for chemical mechanical polishing as claimed in claim 2 , wherein the ceramic polishing particles include ceria particles.

7. The slurry composition for chemical mechanical polishing as claimed in claim 6 , wherein the ceria particles have an average diameter of 1 nm to 150 nm.

8. The slurry composition for chemical mechanical polishing as claimed in claim 6 , wherein the ceramic polishing particles are included in the slurry composition in an amount of 0.1 parts by weight to 15 parts by weight, based on 100 parts of the dispersion agent.

9. The slurry composition for chemical mechanical polishing as claimed in claim 8 , wherein the additive having affinity with silicon nitride is included in the slurry composition in an amount of 0.001 parts by weight to 0.5 parts by weight, based on 100 parts of the dispersion agent.

10. The slurry composition for chemical mechanical polishing as claimed in claim 1 , wherein a pH of the slurry composition is 3 to 6.

11. A slurry composition for chemical mechanical polishing, the slurry composition comprising:

ceria polishing particles;

a dispersion agent; and

an additive having affinity with silicon nitride, the additive having affinity with silicon nitride including a group that forms a covalent bond with an amine group of silicon nitride or an electrostatic interaction bond with an amine group of silicon nitride, the group not forming a hydrogen bond with a hydroxyl group in the dispersion agent,

wherein:

a pH of the slurry composition is 3 to 6, and

the additive having affinity with silicon nitride is included in the slurry composition in an amount of 0.001 parts by weight to 0.5 parts by weight, based on 100 parts of the dispersion agent.

12. The slurry composition for chemical mechanical polishing as claimed in claim 11 , wherein the additive having affinity with silicon nitride includes policresulen and a salt thereof, glutaraldehyde, 1-chloroheptane, 1-chlorooctane, 1-chlorononane, 1-chlorodecane, 1-chlorododecane, 1-chlorotetradecane, 1-chlorohexadecane, polyvinyl chloride, 1-bromoheptane, 1-bromooctane, 1-bromononane, 1-bromodecane, 1-bromododecane, 1-bromotetradecane, 1-bromohexadecane, 1-iodoheptane, 1-iodooctane, 1-iodononane, 1-iododecane, 1-iodododecane, 1-iodotetradecane, or 1-iodohexadecane.

13. The slurry composition for chemical mechanical polishing as claimed in claim 11 , further comprising a dispersion stabilizer.

14. The slurry composition for chemical mechanical polishing as claimed in claim 11 , wherein:

the additive having affinity with silicon nitride includes an alkyl halide group additive, and

a halogen atom of the alkyl halide group additive is negatively charged in an acidic environment.

15. The slurry composition for chemical mechanical polishing as claimed in claim 11 , wherein the additive having affinity with silicon nitride does not form a hydrogen bond with a hydroxy group when the additive having affinity with silicon nitride is dissociated in the dispersion agent.

16. A slurry composition for chemical mechanical polishing, the slurry composition comprising:

ceramic polishing particles;

a dispersion agent;

a pH control agent and

a silicon nitride-protecting additive, the silicon nitride-protecting additive including a group that forms a covalent bond with an amine group of silicon nitride or an electrostatic interaction bond with an amine group of silicon nitride, the group not forming a hydrogen bond with a hydroxyl group in the dispersion agent.

17. The slurry composition for chemical mechanical polishing as claimed in claim 16 , wherein:

the silicon nitride-protecting additive includes an aldehyde group additive, a sulfonic acid group additive, or an alkyl halide group additive,

the aldehyde group additive forms the covalent bond between an aldehyde group thereof and the amine group of silicon nitride,

the sulfonic acid group additive forms the electrostatic interaction bond between a sulfonic group thereof and the amine group of silicon nitride, and

the alkyl halide group additive forms the electrostatic interaction bond between a halogen thereof and the amine group of silicon nitride.

18. The slurry composition for chemical mechanical polishing as claimed in claim 16 , wherein the silicon nitride-protecting additive includes decyl aldehyde, dodecyl aldehyde, tetradecyl aldehyde, hexadecyl aldehyde, glutaraldehyde, polyacrolein, policresulen and a salt thereof, polystyrene sulfonate and a salt thereof, polyvinyl sulfonate and a salt thereof, 1-chloroheptane, 1-chlorooctane, 1-chlorononane, 1-chlorodecane, 1-chlorododecane, 1-chlorotetradecane, 1-chlorohexadecane, polyvinyl chloride, 1-bromoheptane, 1-bromooctane, 1-bromononane, 1-bromodecane, 1-bromododecane, 1-bromotetradecane, 1-bromohexadecane, 1-iodoheptane, 1-iodooctane, 1-iodononane, 1-iododecane, 1-iodododecane, 1-iodotetradecane, or 1-iodohexadecane.

19. The slurry composition for chemical mechanical polishing as claimed in claim 16 , wherein the silicon nitride-protecting additive is included in the slurry composition in an amount of 0.001 parts by weight to 0.5 parts by weight, based on 100 parts of the dispersion agent.

20. The slurry composition for chemical mechanical polishing as claimed in claim 16 , wherein the slurry composition has a pH of 3 to 6.

Assignments (3)
CHANGE OF NAME Recorded Jun 8, 2020
From: K.C. TECH CO., LTD.
To: KC CO., LTD.
Reel/Frame 052865/0644 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 8, 2020
From: KC CO., LTD.
To: KCTECH CO., LTD.
Reel/Frame 052865/0744 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 15, 2018
From: MOON, DOO-SIK; PARK, SANG-HYUN; YOON, BO-UN; KIM, HO-YOUNG; PARK, SE-JUNG; LEE, JAE-HAK; HWANG, JIN-MYUNG
To: SAMSUNG ELECTRONICS CO., LTD.; K.C. TECH CO., LTD.
Reel/Frame 044940/0080 →
Priority Claims (1)
KR 10-2017-0039947 · Mar 29, 2017 · national
Continuity (1)
Related Publication 20180282581A1 · Oct 4, 2018