IP Library Granted Patent US 10,879,195
Granted Patent B2
US 10,879,195 · App. 15/898,004 · Granted Dec 29, 2020

Method for substrate moisture NCF voiding elimination

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Quick Facts
Patent No.
US 10,879,195
App. No.
15/898,004
Granted
Dec 29, 2020
Kind
B2
Abstract

A semiconductor device, semiconductor device assembly, and method of forming a semiconductor device assembly that includes moisture impermeable layer. The assembly includes a first substrate and a second substrate electrically connected to a surface of the first substrate. The assembly includes a layer between the two substrates with the moisture impermeable layer between the layer and the surface of the first substrate. The layer may be non-conductive film, die attach film, capillary underfill, or the like. A portion of the surface of the first substrate may include a solder mask between the moisture impermeable layer and the first substrate. The moisture impermeable layer prevents, or at least inhibits, moisture within the first substrate from potentially creating voids in the layer. The moisture impermeably layer may be a polyimide, a polyimide-like material, an epoxy, an epoxy-acrylate, parylene, vinyltriethoxysilane, or combination thereof. The moisture impermeable layer may have a high electrical resistance.

Claims (15)

1. A semiconductor device assembly comprising:

a first substrate;

a second substrate electrically connected to a surface of the first substrate via a plurality of interconnects, the plurality of interconnects extend from the second substrate to the surface of the first substrate;

a non-conductive layer positioned between the surface of the first substrate and the second substrate;

a solder mask on a portion of the surface of the first substrate; and

a moisture impermeable layer positioned on the surface of the first substrate, the moisture impermeable layer being between the non-conductive layer and the surface of the first substrate and a portion of the moisture impermeable layer being positioned between the solder mask and the non-conductive layer, wherein a portion of the moisture impermeable layer is positioned between the plurality of interconnects and wherein the non-conductive layer extends from the moisture impermeable layer to the second substrate and wherein the moisture impermeable layer resists moisture within the first substrate from moving through the moisture impermeable layer and into the layer.

2. The assembly of claim 1 , the non-conductive layer comprising nonconductive film (NCF).

3. The assembly of claim 1 , the non-conductive layer comprising die attach film.

4. The assembly of claim 1 , the non-conductive layer comprising capillary underfill.

5. The assembly of claim 1 , the first substrate further comprising at least one pad and at least one electrical trace, wherein the moisture impermeable layer is absent from the surface of the substrate at the at least one pad and at the at least one electrical trace.

6. The assembly of claim 1 , wherein the moisture impermeable layer has a thickness between 1μand 15μ.

7. The assembly of claim 1 , wherein the moisture impermeable layer is comprised of one of polyimides, polyimide-like materials, epoxies, epoxy-acrylates, polymers, parylene, vinyltriethoxysilane, and combinations thereof.

8. The assembly of claim 1 , wherein the moisture impermeable layer has an electrical resistance equal to or higher than 10 12 ohm-centimeter.

9. The assembly of claim 1 , wherein the moisture impermeable layer has been treated to improve wetting and adherence of the layer to the moisture impermeable layer.

10. The assembly of claim 1 , wherein the second substrate comprises a semiconductor die.

Assignments (5)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 11, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050713/0001 →
SUPPLEMENT NO. 9 TO PATENT SECURITY AGREEMENT Recorded Aug 9, 2018
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 047282/0463 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 15, 2018
From: WIRZ, BRANDON P.; MCCLAIN, BENJAMIN L.; MINNICH, JEREMY E.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 044947/0009 →