Hybrid III-V technology to support multiple supply voltages and off state currents on same chip

1. A method of forming dual III-V semiconductor channel materials on a wafer, the method comprising the steps of:

providing a wafer having a first III-V semiconductor layer on an oxide;

forming a second III-V semiconductor layer on top of the first III-V semiconductor layer, wherein the second III-V semiconductor layer comprises a different material with an electron affinity that is less than an electron affinity of the first III-V semiconductor layer;

using shallow trench isolation to define at least one first active area and at least one second active area in the wafer;

converting the first III-V semiconductor layer in the at least one second active area to an insulator using ion implantation; and

removing the second III-V semiconductor layer from the at least one first active area selective to the first III-V semiconductor layer,

wherein the first III-V semiconductor layer in the at least one first active area and the second III-V semiconductor layer in the at least one second active area serve as the dual III-V semiconductor channel materials on the wafer.

2. The method of claim 1 , wherein the first III-V semiconductor layer comprises a material selected from the group consisting of: aluminum gallium arsenide, aluminum gallium nitride, aluminum indium arsenide, aluminum nitride, gallium antimonide, gallium arsenide, gallium nitride, indium antimonide, indium arsenide, indium gallium arsenide, indium gallium nitride, indium nitride, indium phosphide and combinations comprising at least one of the foregoing materials.

3. The method of claim 1 , wherein the oxide comprises aluminum oxide.

4. The method of claim 1 , wherein the second III-V semiconductor layer comprises a material selected from the group consisting of: aluminum gallium arsenide, aluminum gallium nitride, aluminum indium arsenide, aluminum nitride, gallium antimonide, gallium arsenide, gallium nitride, indium antimonide, indium arsenide, indium gallium arsenide, indium gallium nitride, indium nitride, indium phosphide and combinations comprising at least one of the foregoing materials.

5. The method of claim 1 , wherein the second III-V semiconductor layer is epitaxially grown on the first III-V semiconductor layer using molecular beam epitaxy or metalorganic chemical vapor deposition.

6. The method of claim 1 , further comprising the step of:

masking the at least one first active area prior to converting the first III-V semiconductor layer in the at least one second active area to an insulator.

7. The method of claim 1 , wherein the step of converting the first III-V semiconductor layer in the at least one second active area to an insulator further comprises the step of:

implanting one or more ions into the first III-V semiconductor layer in the at least one second active area, wherein the ions are selected from the group consisting of: oxygen, iron and chromium.

8. The method of claim 1 , further comprising the step of:

masking the at least one second active area prior to removing the second III-V semiconductor layer from the at least one first active area.

9. The method of claim 1 , further comprising the step of:

forming i) at least one first device on the wafer in the at least one first active area and ii) at least one second device on the on the wafer in the at least one second active area.

10. The method of claim 9 , wherein the at least one first device is a logic device and the at least one second device is a memory device.