Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
There is provided a technique which includes: forming a first film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a first cycle a predetermined number of times, the first cycle including non-simultaneously performing: forming a first layer containing silicon, oxygen, carbon and nitrogen by simultaneously supplying first aminosilane and an oxidant to the substrate; and performing a first modifying process to the first layer under a first temperature; and performing a second modifying process to the first film under a second temperature that is higher than the first temperature.
1. A method of manufacturing a semiconductor device, comprising:
forming a first film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a first cycle multiple times, the first cycle including non-simultaneously performing:
forming a first layer containing silicon, oxygen, carbon and nitrogen by simultaneously supplying first aminosilane and an oxidant to the substrate; and
performing a first modifying process to the first layer at a first temperature to desorb impurities contained in the first layer and densify the first layer; and
performing, after forming the first film by performing the first cycle multiple times, a second modifying process to the first film at a second temperature that is higher than the first temperature to desorb impurities contained in the first film and densify the first film.
2. The method according to claim 1 , further comprising supplying second aminosilane that is different from the first aminosilane or alkoxysilane to the substrate.
3. The method according to claim 2 , wherein a number of amino ligands in one molecule of the first aminosilane is different from a number of amino ligands in one molecule of the second aminosilane.
4. The method according to claim 2 , wherein a number of carbon atoms in one molecule of the first aminosilane is different from a number of carbon atoms in one molecule of the second aminosilane.
5. The method according to claim 2 , wherein a number of nitrogen atoms in one molecule of the first aminosilane is different from a number of nitrogen atoms in one molecule of the second aminosilane.
6. The method according to claim 2 , wherein a ratio of a number of carbon atoms to a number of nitrogen atoms in one molecule of the first aminosilane is different from a ratio of a number of carbon atoms to a number of nitrogen atoms in one molecule of the second aminosilane.
7. The method according to claim 2 , wherein the act of forming the first layer comprises simultaneously supplying the second aminosilane or alkoxysilane, the first aminosilane and the oxidant.
8. The method according to claim 2 , further comprising:
forming a second film containing silicon, oxygen, carbon and nitrogen by performing a second cycle a predetermined number of times, the second cycle including non-simultaneously performing:
forming a second layer containing silicon, oxygen, carbon and nitrogen by simultaneously supplying the second aminosilane or the alkoxysilane and the oxidant; and
performing the first modifying process to the second layer under the first temperature; and
forming a laminated film in which the first film and the second film are alternately laminated on the substrate by alternately performing the act of forming the first film and the act of forming the second film,
wherein the act of performing the second modifying process comprises performing the second modifying process to the laminated film.
9. The method according to claim 8 , wherein a composition of the first layer is different from a composition of the second layer, and
wherein a composition of the first film is different from a composition of the second film.
10. The method according to claim 8 , wherein a carbon concentration, a nitrogen concentration or a ratio of the carbon concentration to the nitrogen concentration in the first layer is different from that in the second layer, and
wherein a carbon concentration, a nitrogen concentration or a ratio of the carbon concentration to the nitrogen concentration in the first film is different from that in the second film.
11. The method according to claim 8 , wherein the oxidant is continuously supplied in the act of forming the first film.
12. The method according to claim 8 , wherein the oxidant is continuously supplied in the act of forming the second film.
13. The method according to claim 8 , wherein the oxidant is continuously supplied in the act of forming the laminated film.
14. The method according to claim 8 , wherein the supply of the oxidant starts prior to the supply of the first aminosilane in the act of forming the first film.
15. The method according to claim 8 , wherein the supply of the oxidant starts prior to the supply of the second aminosilane or the alkoxysilane in the act of forming the second film.
16. The method according to claim 1 , wherein the oxidant is continuously supplied in the act of forming the first film.
17. The method according to claim 1 , wherein the supply of the oxidant starts prior to the supply of the first aminosilane in the act of forming the first film.
18. The method according to claim 1 , wherein the oxidant includes a nitrogen oxide-based gas.