IP Library Granted Patent US 10,475,776
Granted Patent B2
US 10,475,776 · App. 15/900,568 · Granted Nov 12, 2019

Fan-out semiconductor package module

Inventors: Yeong A Kim (Suwon-si, KR); Eun Sil Kim (Suwon-si, KR); Young Gwan Ko (Suwon-si, KR); Akihisa Kuroyanagi (Suwon-si, KR); Jin Su Kim (Suwon-si, KR); Jun Woo Myung (Suwon-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H01L25/16H01L21/4857H01L21/52H01L21/568H01L23/3135H01L23/49816H01L23/49822H01L23/49838H01L23/562H01L24/08H01L24/19H01L24/96H01L28/40H01L2224/04105H01L2224/12105H01L2224/16227H01L2224/18H01L2224/24195H01L2224/32225H01L2224/73204H01L2224/96H01L2924/18162H01L2924/19105H01L2924/3511H01L2924/37001
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Quick Facts
Patent No.
US 10,475,776
App. No.
15/900,568
Granted
Nov 12, 2019
Kind
B2
Abstract

A fan-out semiconductor package module includes a core member having first and second through-holes. A semiconductor chip is in the first through-hole and has an active surface with a connection pad and an inactive surface opposing the active surface. Another passive component is in the second through-hole. An first encapsulant covers at least portions of the core member and the passive component, and fills at least a portion of the second through-hole. A reinforcing member is on the first encapsulant. A second encapsulant covers at least a portion of the semiconductor chip, and fills at least a portion of the first through-hole. A connection member is on the core member, the active surface of the semiconductor chip, and the passive component, and includes a redistribution layer electrically connected to the connection pad and the passive component.

Claims (67)

1. A fan-out semiconductor package module comprising:

a core member having a first through-hole and a second through-hole spaced apart from each other;

a semiconductor chip disposed in the first through-hole, and having an active surface with a connection pad and an inactive surface opposing the active surface;

a first passive component disposed in the second through-hole;

a first encapsulant covering at least portions of the core member and the first passive component, and filling at least a portion of the second through-hole;

a reinforcing member disposed on the first encapsulant to face a first surface of the first passive component;

a second encapsulant covering at least a portion of the semiconductor chip, and filling at least a portion of the first through-hole; and

a connection member disposed on the core member, the active surface of the semiconductor chip, and a second surface of the first passive component opposite to the first surface, the connection member including a redistribution layer electrically connected to the connection pad and to electrode pads on the second surface of the first passive component.

2. The fan-out semiconductor package module of claim 1 , further comprising:

a second passive component disposed in the first through-hole, the second passive component and the semiconductor chip being located side by side,

wherein the second encapsulant covers at least a portion of the second passive component, and

the second passive component is electrically connected to the redistribution layer.

3. The fan-out semiconductor package module of claim 2 , wherein the second passive component has a thickness greater than that of the first passive component.

4. The fan-out semiconductor package module of claim 2 , wherein the semiconductor chip, the second passive component, and the first passive component are located side by side, and are electrically connected to each other through the redistribution layer of the connection member.

5. The fan-out semiconductor package module of claim 4 , wherein the connection member further includes a via connecting each of the connection pad, the second passive component, and the first passive component to the redistribution layer, and

each of the connection pad, the second passive component, and the second passive component is physically in contact with the via.

6. The fan-out semiconductor package module of claim 2 , wherein the semiconductor chip includes a power management integrated circuit (PMIC), and

each of the second passive component and the first passive component includes a capacitor.

7. The fan-out semiconductor package module of claim 2 , wherein the core member further includes a third through-hole, spaced apart, from the first through-hole and the second through-hole,

the third through-hole is provided with a third passive component therein,

the first encapsulant covers at least a portion of the third passive component and fills at least a portion of the third through-hole, and

the redistribution layer is electrically connected to the third passive component.

8. The fan-out semiconductor package module of claim 1 , wherein the semiconductor chip has a thickness greater than that of the core member.

9. The fan-out semiconductor package module of claim 1 , wherein the first through-hole passes through the first encapsulant and the reinforcing member.

10. The fan-out semiconductor package module of claim 1 , wherein the second encapsulant covers at least a portion of the reinforcing member.

11. The fan-out semiconductor package module of claim 1 , wherein an upper surface of the second encapsulant is located above an upper surface of the first encapsulant.

12. The fan-out semiconductor package module of claim 1 , wherein the reinforcing member includes a glass fiber, an inorganic filler, and an insulating resin.

13. The fan-out semiconductor package module of claim 1 , wherein at least a surface of the reinforcing member is provided with a metal pattern thereon.

14. The fan-out semiconductor package module of claim 1 , further comprising:

a metal layer disposed on a wall of the second through-hole.

15. The fan-out semiconductor package module of claim 14 , wherein a wall of the first through-hole is physically in contact with the second encapsulant.

16. The fan-out semiconductor package module of claim 1 , wherein the core member includes a first insulating layer in contact with the connection member, a first distribution layer in contact with the connection member and embedded in the first insulating layer, and a second distribution layer in a first surface opposing a second surface in which the first distribution layer of the first insulating layer is embedded, and

the first distribution layer and the second distribution layer are electrically connected to the connection pad.

17. The fan-out semiconductor package module of claim 16 , wherein the core member further includes a second insulating layer on the first insulating layer and covering the second distribution layer, and a third distribution layer on the second insulating layer, and

the third distribution layer is electrically connected to the connection pad.

18. The fan-out semiconductor package module of claim 1 , wherein the core member includes a first insulating layer, as well as a first distribution layer and a second distribution layer, respectively on opposing surfaces of the first insulating layer, and

the first distribution layer and the second distribution layer are electrically connected to the connection pad.

19. The fan-out semiconductor package module of claim 18 , wherein the core member further includes a second insulating layer on the first insulating layer and covering the first distribution layer, a third distribution layer on the second insulating layer, a third insulating layer on the first insulating layer and covering the second distribution layer, and a fourth distribution layer on the third insulating layer, and

the third distribution layer and the fourth distribution layer are electrically connected to the connection pad.

20. The fan-out semiconductor package module of claim 1 , wherein the reinforcing member integrally extends over the first passive component.

21. The fan-out semiconductor package module of claim 1 , wherein the reinforcing member has a through-hole extending over an entirety of the semiconductor chip.

22. A fan-out semiconductor package module comprising:

a core member having a first through-hole and a second through-hole spaced apart from each other;

a semiconductor chip disposed in the first through-hole, and having an active surface with a connection pad and an inactive surface opposing the active surface;

a first passive component disposed in the second through-hole;

a first encapsulant covering at least portions of the core member and the first passive component, and filling at least a portion of the second through-hole;

a reinforcing member disposed on the first encapsulant;

a second encapsulant covering at least a portion of the semiconductor chip, and filling at least a portion of the first through-hole; and

a connection member disposed on the core member, the active surface of the semiconductor chip, and the first passive component, the connection member including a redistribution layer electrically connected to the connection pad, and the first passive component,

wherein the reinforcing member has an elastic modulus greater than that of the first encapsulant.

23. A fan-out semiconductor package module comprising:

a core member having a first through-hole and a second through-hole;

a reinforcing layer over the core member, having a first through-hole over the first through-hole of the core member, and covering the second through-hole;

a first component in the first through-hole;

a second component in the second through-hole; and

an encapsulant at least covering portions of the reinforcing layer and the first component.

24. The fan-out semiconductor package module of claim 23 , wherein the encapsulant includes:

a first encapsulant covering the core member, covering the second component, and in the second through-hole of the core member; and

a second encapsulant covering the reinforcing layer, covering the first component, in the first through-hole of the reinforcing layer, and in the first through-hole of the core member.

25. The fan-out semiconductor package module of claim 23 , wherein:

the first component has a first height greater than that of the core member; and

the second component has a second height less than that of the core member.

26. The fan-out semiconductor package module of claim 23 , wherein:

the first through-hole of the core member is spaced apart from the second through-hole of the core member; and

the core member includes a metal layer between the first through-hole of the core member and the second through-hole of the core member.

27. The fan-out semiconductor package module of claim 23 , wherein the reinforcing layer has an elastic modulus greater than that of the encapsulant.

28. The fan-out semiconductor package module of claim 23 , wherein the reinforcing layer integrally extends over the second component.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 3, 2019
From: SAMSUNG ELECTRO-MECHANICS CO., LTD.
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 049350/0756 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 20, 2018
From: KIM, YEONG A; KIM, EUN SIL; KO, YOUNG GWAN; KUROYANAGI, AKIHISA; KIM, JIN SU; MYUNG, JUN WOO
To: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Reel/Frame 044982/0194 →
Priority Claims (1)
KR 10-2017-0141139 · Oct 27, 2017 · national
Continuity (1)
Related Publication 20190131285A1 · May 2, 2019