Semiconductor device manufacturing method and semiconductor wafer
According to an embodiment, a first resist pattern that includes a mark including a second pattern provided with first components and a third pattern not provided with the first components is formed. Then, a first recessed area is formed on a processing target layer using the first resist pattern. Thereafter, a second resist pattern that includes a fourth pattern is formed. The fourth pattern is formed such that the third pattern and part of the second pattern, which includes at least one row of the first components arranged along a periphery of the third pattern, are exposed. Then, a second recessed area is formed by using the second resist pattern. Thereafter, a position of the processing target layer is recognized by using a stepped portion formed at the second recessed area, in a light exposure apparatus, and a third resist pattern is formed.
1. A semiconductor wafer comprising:
a plurality of shot regions arranged therein, which include a device region arranging a semiconductor device, and a kerf region arranged around the device region and provided with a mark, the semiconductor device including a first pattern including first components, wherein
the mark includes a first line pattern composed of a recessed area provided on a first film present as an underlying layer, a peripheral pattern constituting a region of the mark other than the first line pattern, and a second film covering the first line pattern and the peripheral pattern,
the peripheral pattern is provided with the first components,
the first components are pillar films and auxiliary pillar films,
at least one row of the pillar films and the auxiliary pillar films as the first components is arranged along a contour of the recessed area, inside the contour of the recessed area,
in the peripheral pattern, the pillar films and the auxiliary pillar films are embedded in the first film, and
in the recessed area, the pillar films and the auxiliary pillar films are embedded in the first film and the second film covering the first film.
2. The semiconductor wafer according to claim 1 , wherein the first components are columnar patterns.
3. A semiconductor wafer comprising:
a plurality of shot regions arranged therein, which include a device region arranging a semiconductor device, and a kerf region arranged around the device region and provided with a mark, the semiconductor device including a first pattern including first components, wherein
the mark includes a first line pattern composed of a first film present as an underlying layer, a peripheral pattern arranged at a recessed area provided on the first film in a region of the mark other than the first line pattern, and a second film covering the first line pattern and the peripheral pattern,
the first line pattern is provided with the first components,
the first components are pillar films and auxiliary pillar films,
at least one row of the pillar films and the auxiliary pillar films as the first components is arranged along a contour of the first line pattern, inside a region of the recessed area in contact with the first line pattern,
in the first line pattern, the pillar films and the auxiliary pillar films are embedded in the first film, and
in the recessed area, the pillar films and the auxiliary pillar films are embedded in the first film and the second film covering the first film.
4. The semiconductor wafer according to claim 3 , wherein the first components are columnar patterns.