Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device includes supplying an inert gas into a process chamber; exhausting an internal atmosphere of the process chamber from an exhaust part; acquiring first data serving as reference data on a relationship between a flow rate of the inert gas and a pressure in one of the process chamber or the exhaust part; processing a substrate accommodated in the process chamber by supplying a processing gas into the process chamber; and adjusting exhaust characteristics by adjusting a valve opening degree of an exhaust regulating part installed in the exhaust part.
1. A method of manufacturing a semiconductor device, comprising:
supplying an inert gas into a process chamber;
exhausting an internal atmosphere of the process chamber from an exhaust part;
acquiring first data serving as reference data on a relationship between a flow rate of the inert gas and a pressure in one of the process chamber or the exhaust part;
processing a substrate accommodated in the process chamber by supplying a processing gas into the process chamber; and
adjusting exhaust characteristics by adjusting a valve opening degree of an exhaust regulating part installed in the exhaust part,
wherein the act of adjusting the exhaust characteristics includes:
acquiring second data, which is measurement data on a relationship between the flow rate of the inert gas and a pressure measured in one of the process chamber or the exhaust part, by measuring the pressure while varying the flow rate of the inert gas with the valve opening degree of the exhaust regulating part set to a predetermined value;
determining whether or not difference data between the first data and the second data is within a predetermined range, the difference data being obtained by comparing gradient data on the second data with gradient data on the first data; and
changing the valve opening degree of the exhaust regulating part when the difference data is not within the predetermined range, such that the gradient data on the second data approaches the gradient data on the first data.
2. The method of claim 1 , wherein the act of acquiring the second data, the act of determining and the act of changing are repeated until the difference data falls within the predetermined range.
3. The method of claim 2 , further comprising outputting maintenance data indicating that maintenance of the exhaust part is required when a number of times that the difference data does not fall within the predetermined range exceeds a predetermined number of times.
4. The method of claim 3 , further comprising outputting maintenance timing data indicating that a maintenance timing of the exhaust part approaches when a frequency of changing the valve opening degree of the exhaust regulating part so that the difference data falls within the predetermined range exceeds a predetermined frequency.
5. The method of claim 4 , wherein the act of adjusting the exhaust characteristics is performed after the act of processing the substrate is performed a predetermined number of times.
6. The method of claim 3 , wherein the act of adjusting the exhaust characteristics is performed after the act of processing the substrate is performed a predetermined number of times.
7. The method of claim 2 , further comprising outputting maintenance timing data, indicating that a maintenance timing of the exhaust part approaches when a frequency of changing the valve opening degree of the exhaust regulating part so that the difference data falls within the predetermined range exceeds a predetermined frequency.
8. The method of claim 7 , wherein the act of adjusting the exhaust characteristics is performed after the act of processing the substrate is performed a predetermined number of times.
9. The method of claim 2 , wherein the act of adjusting the exhaust characteristics is performed after the act of processing the substrate is performed a predetermined number of times.
10. The method of claim 1 , wherein the act of adjusting the exhaust characteristics is performed after the act of processing the substrate is performed a predetermined number of times.