Semiconductor manufacturing apparatus for manufacturing a semiconductor device having a high-K insulating film, and a method for manufacturing the semiconductor device
Provided is a semiconductor manufacturing apparatus including: a container in which a processing chamber is installed; a stage installed in the processing chamber and configured to hold a semiconductor substrate; a gas supply line configured to supply reactive gas to the processing chamber; and a vacuum line configured to exhaust the processing chamber, wherein the semiconductor substrate includes a high-k insulating film, and as the reactive gas, mixed gas including complex-forming gas forming a volatile organometallic complex by reacting with a metal element included in the high-k insulating film and complex stabilizing material gas that increases stability of the organometallic complex is supplied.
1. A method for manufacturing a semiconductor device, the method comprising:
placing, in a processing chamber, a semiconductor substrate on which a mask layer having a predetermined pattern shape is formed on a high-k insulating film;
desorbing gas or a foreign matter adsorbed on a surface of the semiconductor substrate;
supplying reactive gas to the processing chamber in a state where a temperature of the semiconductor substrate falls below a predetermined temperature;
stopping the supply of the reactive gas and heating the semiconductor substrate; and
vaporizing an organometallic complex generated by reacting with a metal element included in the high-k insulating film and exhausting the vaporized organometallic complex from the processing chamber,
wherein the reactive gas is mixed gas including complex-forming gas forming the organometallic complex by reacting with the metal element included in the high-k insulating film and complex stabilizing material gas that increases stability of the organometallic complex.
2. The method according to claim 1 , wherein the metal element included in the high-k insulating film is a metal element classified in a fifth period and the following periods of a periodic table.
3. The method according to claim 1 , wherein the metal element included in the high-k insulating film is a rare earth element.
4. The method according to claim 1 , wherein a raw material for the complex-forming gas is an organic compound capable of forming at least two or more coordination bonds to a transition metal atom, that is, a so-called multidentate ligand molecule.
5. The method according to claim 4 , wherein the raw material for the complex-forming gas includes any of diketones, ketoester, and ketoimine.
6. The method according to claim 1 , wherein a raw material for the complex stabilizing material gas is an organic compound having two or more elements having an unshared electron pair such as an oxygen atom or a nitrogen atom in a molecular skeleton and five or more atoms except for a hydrogen atom and a fluorine atom.
7. The method according to claim 6 , wherein the raw material for the complex stabilizing material gas is ethers.