Structure and method to reduce copper loss during metal cap formation
A copper or copper alloy is formed in a reflow enhancement layer lined opening present in an interconnect dielectric material layer. A ruthenium (Ru) or osmium (Os) doped copper or copper alloy cap is then formed via ion implantation and annealing in an upper portion of a copper or copper alloy present in the opening. The upper portion of the copper or copper alloy containing the ruthenium (Ru) or osmium (Os) doped copper or copper alloy cap can mitigate or even present prevent preferential loss of copper which can aid in lowering the interconnect resistance of the structure.
1. A method of forming a semiconductor structure, the method comprising:
providing an opening in an interconnect dielectric material layer;
forming a diffusion barrier material in the opening and on a topmost surface of the interconnect dielectric material layer;
forming a reflow enhancement layer on the diffusion barrier layer;
forming copper or a copper alloy on the reflow enhancement layer;
forming a ruthenium (Ru) or osmium (Os) doped copper or copper alloy cap in an upper portion of the copper or copper alloy; and
removing portions of the diffusion barrier material, the reflow enhancement layer, and the copper or copper alloy that are located outside the opening and on the topmost surface of the interconnect dielectric material layer, while maintaining the Ru or Os doped copper or copper alloy cap on a remaining portion of the copper or copper alloy in the opening.
2. The method of claim 1 , wherein the forming the ruthenium (Ru) or osmium (Os) doped copper or copper alloy cap comprises:
implanting ruthenium (Ru) or osmium (Os) into the upper portion of the copper or copper alloy; and
annealing.
3. The method of claim 2 , wherein the annealing is performed at a temperature from 100° C. to 300° C.
4. The method of claim 2 , wherein no ruthenium (Ru) or osmium (Os) is introduced into the interconnect dielectric material layer during the implanting of ruthenium (Ru) or osmium (Os) into the upper portion of the copper or copper alloy.
5. The method of claim 1 , wherein the reflow enhancement layer comprises ruthenium (Ru) and a ruthenium (Ru) doped copper or copper alloy cap is formed.
6. The method of claim 1 , wherein the reflow enhancement layer comprises osmium (Os) and a osmium (Os) doped copper or copper alloy cap is formed.
7. The method of claim 1 , wherein after the removing, the Ru or Os doped copper or copper alloy cap has a topmost surface that is coplanar with the topmost surface of the interconnect dielectric material layer.
8. The method of claim 1 , wherein the Ru or Os doped copper or copper alloy cap has a graded Ru or Os concentration that decreases from a topmost surface of the Ru or Os doped copper or copper alloy cap to a bottommost surface of the Ru or Os doped copper or copper alloy cap.
9. The method of claim 1 , wherein the Ru or Os doped copper or copper alloy cap has a constant Ru or Os concentration from a topmost surface of the Ru or Os doped copper or copper alloy cap to a bottommost surface of the Ru or Os doped copper or copper alloy cap.
10. The method of claim 1 , wherein the forming the copper or copper alloy comprises electroplating or a combination of physical vapor deposition and a reflow anneal.
11. The method of claim 1 , wherein the opening extends entirely through the interconnect dielectric material layer and contacts a surface of a substrate.
12. The method of claim 1 , wherein after the removing of the portions of the diffusion barrier material and portions of the reflow enhancement layer that are located outside the opening and on the topmost surface of the interconnect dielectric material layer, a portion of the diffusion barrier material and a portion of the reflow enhancement layer remain in the opening.
13. The method of claim 12 , wherein the remaining diffusion barrier material in the opening and the remaining reflow enhancement layer in the opening are shaped.
14. The method of claim 13 , wherein the remaining diffusion barrier material in the opening and the remaining reflow enhancement layer in the opening have topmost surfaces that are coplanar with each other.
15. The method of claim 14 , wherein the topmost surfaces of the remaining diffusion barrier liner material and the remaining reflow enhancement layer in the opening are coplanar with the topmost surface of the Ru or Os doped copper or copper alloy cap and the topmost surface of the interconnect dielectric material layer.
16. The method of claim 1 , wherein the ruthenium (Ru) or osmium (Os) doped copper or copper alloy cap has a bottommost surface that contacts an entirety of a topmost surface of the copper or a copper alloy.
17. The method of claim 1 , wherein the remaining portion of the copper or copper alloy in the opening contains no voids.
18. The method of claim 1 , wherein the ruthenium (Ru) or osmium (Os) doped copper or copper alloy cap mitigates galvanic loss of copper.
19. The method of claim 1 , wherein the removing comprises a planarization process.