Method of manufacturing semiconductor device and method of cleaning substrate

1. A method of cleaning a substrate, comprising:

applying a solution including a size-modification material on a substrate, on which particles to be removed are disposed;

generating, on the substrate, size-modified particles having a larger size than the particles to be removed, from the particles disposed on the substrate and the size-modification material; and

removing the size-modified particles from the substrate, wherein;

the size-modification material includes a surface modification material that attaches to a surface of the particles to be removed in the generating size-modified particles, and

the surface modification material is a silane coupling agent having a general formula SiX(CH 3 ) n (OR) 3-n , where X is functional group coupled to Si and R is an alkoxy group and n is 0, 1, 2 or 3.

2. The method of claim 1 , wherein X is one selected from the group consisting of vinyl, epoxy, methacryloxy, acryloxy, amino and mercapto.

3. The method of claim 1 , wherein the alkoxy group is one selected from the group consisting of methoxy, ethoxy, dialkoxy and trialkoxy.

4. The method of claim 1 , wherein an average particle size of the particles to be removed before size modification ranges from 0.1 nm to 40 nm.

5. The method of claim 4 , wherein an average size of the size-modified particles ranges from 50 nm to 1000 μm.

6. The method of claim 1 , wherein the functional group X is directly bonded to Si or connected by an alkyl chain having a carbon number less than 18.

7. The method of claim 6 , wherein the alkyl chain has a straight chain.

8. The method of claim 1 , wherein the removing the size-modified particles from the substrate includes applying an organic solvent or an aqueous solution including NH 4 OH and H 2 O 2 .

9. The method of claim 8 , wherein the removing the size-modified particles from the substrate further includes, after applying the organic solvent or the aqueous solution including NH 4 OH and H 2 O 2 , applying water, thereby rinsing the substrate.

10. A method of manufacturing a semiconductor device, the method comprising:

performing plasma processing on one or more layers disposed on a semiconductor wafer;

applying a solution including a size-modification material over the semiconductor wafer, on which particles caused by the plasma processing are disposed, the size-modification material includes a polymerizable material;

generating, on the semiconductor wafer, size-modified particles having a larger size than the particles caused by the plasma processing, from the particles caused by the plasma processing disposed on the semiconductor wafer and the size-modification material via a polymerization process; and

removing the size-modified particles from the semiconductor wafer.

11. The method of claim 10 , wherein the plasma processing includes one selected from the group consisting of plasma dry etching, plasma resist ashing and plasma film deposition.

12. The method of claim 10 , wherein the polymerization process is performed by applying heat.

13. The method of claim 10 , wherein the polymerization process is performed by applying ultra violet light.

14. The method of claim 10 , wherein the polymerizable material is an acrylic monomer selected from the group consisting of an acrylamide, a methacrylamide, an acrylate, an acrylonitrile, a bisphenol acrylic, a carbohydrate monomer, a fluorinated acrylic, a maleimide and a methacrylate.

15. A method of manufacturing a semiconductor device, the method comprising:

performing chemical mechanical polishing (CMP) processing on one or more layers disposed on a semiconductor wafer;

applying a solution including a size-modification material over the semiconductor wafer, on which particles caused by the CMP processing are disposed, the size-modification material includes a polymerizable material;

generating, on the semiconductor wafer, size-modified particles having a larger size than the particles caused by the CMP processing, from the particles caused by the CMP processing disposed on the semiconductor wafer and the size-modification material via a polymerization process; and

removing the size-modified particles from the semiconductor wafer.

16. The method of claim 15 , wherein the polymerization process is performed by applying heat.

17. The method of claim 15 , wherein the polymerization process is performed by applying ultra violet light.

18. The method of claim 15 , wherein the polymerizable material is an acrylic monomer selected from the group consisting of an acrylamide, a methacrylamide, an acrylate, an acrylonitrile, a bisphenol acrylic, a carbohydrate monomer, a fluorinated acrylic, a maleimide and a methacrylate.