Pattern formation material and pattern formation method
According to one embodiment, a pattern formation material includes a first monomer. The first monomer includes a first molecular chain, a first group, and a second group. The first molecular chain includes a first end and a second end. The first group has an ester bond to the first end. The second group has an ester bond to the second end. The first group is one of acrylic acid or methacrylic acid. The second group is one of acrylic acid or methacrylic acid. The first molecular chain includes a plurality of first elements bonded in a straight chain configuration. The first elements are one of carbon or oxygen. The number of the first elements is 6 or more. A film including the first monomer is caused to absorb a metal compound including a metallic element.
1. A pattern formation method, comprising:
a film formation process of forming, on a substrate, a pattern formation material film including a pattern formation material;
an absorption process of causing the pattern formation material film to absorb an organometal compound including a metallic element comprising at least one selected from the group consisting Al, Ti, V and W, the absorption processing being performed after the film formation process; and
a patterning process of patterning the pattern formation material,
the pattern formation material including a first monomer, the first monomer including a first molecular chain, a first group, and a second group, the first molecular chain including a first end and a second end, the first group having an ester bond to the first end, the second group having an ester bond to the second end, the first group being one of acrylic acid or methacrylic acid, the second group being one of acrylic acid or methacrylic acid,
the first molecular chain including a plurality of first elements bonded in a straight chain configuration, the first elements being one of carbon or oxygen, the number of the first elements being 6 or more.
2. The method according to claim 1 , wherein
the first monomer further includes:
a second molecular chain including a third end and a fourth end; and
a third group bonded to the third end,
the third group being one of acrylic acid or methacrylic acid,
the fourth end being bonded to the first molecular chain.
3. The method according to claim 1 , wherein the pattern formation material further includes a second monomer including acrylic.
4. The method according to claim 1 , wherein the first monomer includes at least one selected from the group consisting of glycerol propoxylate(1PO/OH)triacrylate, tripolyethyleneglycol diacrylate, neopentylglycol hydroxypivalate diacrylate, bisphenol A ethoxylate diacrylate, bisphenol A propoxylate diacrylate, and tri methylolpropane propoxylate triacrylate.
5. The method according to claim 1 , wherein the first monomer includes a benzene ring.
6. The method according to claim 1 , wherein a concentration of the first monomer inside the pattern formation material is 50 weight percent or more.
7. The method according to claim 1 , wherein the pattern formation material further includes a first material including at least one selected from the group consisting of a photo-radical generator and a photoacid generator.
8. The method according to claim 1 , wherein
the film formation process includes:
positioning a film between the substrate and a surface of a template, the film including the pattern formation material, the surface having an unevenness; and
curing the film, and
the pattern formation material film is obtained from the film positioned at a recess of the unevenness.
9. The method according to claim 8 , wherein the curing includes irradiating light on the film.
10. The method according to claim 8 , wherein the curing includes heating the film.
11. The method according to claim 1 , wherein the absorption process includes introducing the metal compound into the pattern formation material film.
12. The method according to claim 1 , wherein the absorption process includes causing the pattern formation material film to absorb at least one of a liquid including the metal compound or a gas including the metal compound.
13. The method according to claim 1 , further comprising a process of processing, after the absorption process, the pattern formation material film in an atmosphere including at least one selected from the group consisting of water, oxygen, and ozone.
14. The method according to claim 13 , wherein the pattern formation material film after the process includes an oxide including the metallic element.
15. The method according to claim 1 , further comprising a removal process of removing, after the process, at least a portion of a region of the substrate not covered with the pattern formation material film.
16. The method according to claim 15 , wherein the removal process includes causing the uncovered region to absorb a gas including at least one selected from the group consisting of fluorine, chlorine, and carbon.
17. The method according to claim 1 , wherein the metal compound includes trimethyl aluminum.