Method for manufacturing semiconductor device and edge termination structure of semiconductor device

1. An edge termination structure of a semiconductor device, the edge termination structure comprising:

an n-type semiconductor layer containing an n-type impurity;

a p-type semiconductor layer formed on the n-type semiconductor layer and containing a p-type impurity;

a first region formed in the p-type semiconductor layer and containing a larger amount of at least one of the n-type impurity and the p-type impurity than another region of the p-type semiconductor layer; and

a p-type impurity containing region formed in the n-type semiconductor layer and below the first region, and containing the p-type impurity,

wherein an upper surface of the first region is flush with an upper surface of the p-type semiconductor layer,

wherein a p-type impurity concentration of the p-type impurity containing region is less than a p-type impurity concentration of said another region of the p-type semiconductor layer,

wherein, in a stacking direction of the n-type semiconductor layer and the p-type semiconductor layer, outer edges of the first region align with outer edges of the p-type impurity containing region, and

wherein the first region includes the n-type impurity.

2. The edge termination structure in accordance with claim 1 , wherein, in the stacking direction of the n-type semiconductor layer and the p-type semiconductor layer, an entirety of the p-type impurity containing region overlaps with the first region.

3. The edge termination structure in accordance with claim 1 , wherein the p-type impurity containing region contains silicon.

4. The edge termination structure in accordance with claim 3 , wherein the p-type impurity containing region further contains magnesium as the p-type impurity.

5. The edge termination structure in accordance with claim 1 , further comprising:

an insulation film disposed on the upper surface of the first region and the upper surface of the p-type semiconductor layer.

6. The edge termination structure in accordance with claim 5 , wherein the insulation film abuts the upper surface of the first region and the upper surface of the p-type semiconductor layer.

7. The edge termination structure in accordance with claim 1 , further comprising:

a trench that passes through the p-type semiconductor layer and reaches the n-type semiconductor layer.

8. The edge termination structure in accordance with claim 7 , wherein, in the stacking direction of the n-type semiconductor layer and the p-type semiconductor layer, a bottom surface of the p-type impurity containing region is coplanar with a bottom surface of the trench.

9. The edge termination structure in accordance with claim 7 , wherein, in the stacking direction of the n-type semiconductor layer and the p-type semiconductor layer, a bottom surface of the p-type impurity containing region is located below a bottom surface of the trench.

10. The edge termination structure in accordance with claim 7 , wherein, with respect to a bottom surface of the n-type semiconductor layer, a bottom surface of the first region is located higher than a bottom surface of the trench.

11. The edge termination structure in accordance with claim 1 , wherein the n-type semiconductor layer and the p-type semiconductor layer comprise a Group III nitride.

12. The edge termination structure in accordance with claim 1 , further comprising a trench that is recessed to pass through the p-type semiconductor layer and to reach the n-type semiconductor layer,

wherein, in the stacking direction of the n-type semiconductor layer and the p-type semiconductor layer, a bottom face of the p-type impurity containing region is located to be coplanar with a bottom face of the trench.

13. A method for manufacturing a semiconductor device including an edge termination region, the method comprising:

a stacking process that stacks a p-type semiconductor layer containing a p-type impurity on an n-type semiconductor layer containing an n-type impurity;

an ion implantation process that ion-implants at least one of the n-type impurity and the p-type impurity into a region of the p-type semiconductor layer located in the edge termination region; and

a heat treatment process that performs a heat treatment to activate the ion-implanted impurity,

wherein the ion implantation process and the heat treatment process are performed such that the p-type impurity of the p-type semiconductor layer is diffused into the n-type semiconductor layer to form a p-type impurity containing region in at least a part of the n-type semiconductor layer and below a region of the p-type semiconductor layer into which the ion implantation has been performed,

wherein a p-type impurity concentration of the p-type impurity containing region is less than a p-type impurity concentration of an area of the p-type semiconductor layer located outside of the region and of the p-type semiconductor layer that is ion implanted in the ion implantation process, and

wherein, in the ion implantation process, the n-type impurity is implanted into the p-type semiconductor layer.

14. The method for manufacturing the semiconductor device in accordance with claim 13 , further comprising:

a trench forming process that forms a trench that is recessed to pass through the p-type semiconductor layer and reach the n-type semiconductor layer,

wherein, in a stacking direction of the n-type semiconductor layer and the p-type semiconductor layer, a bottom face of the p-type impurity containing region is located to be coplanar with a bottom face of the trench or below the bottom face of the trench.

15. The method for manufacturing the semiconductor device in accordance with claim 14 , wherein, in the stacking direction of the n-type semiconductor layer and the p-type semiconductor layer, the bottom face of the p-type impurity containing region is located to be coplanar with the bottom face of the trench.

16. The method for manufacturing the semiconductor device in accordance with claim 14 , wherein, in the stacking direction of the n-type semiconductor layer and the p-type semiconductor layer, the bottom face of the p-type impurity containing region is located below the bottom face of the trench.

17. The method for manufacturing the semiconductor device in accordance with claim 13 , wherein the n-type semiconductor layer and the p-type semiconductor layer comprise a Group III nitride.

18. A method for manufacturing a semiconductor device including an edge termination region, the method comprising:

a stacking process that stacks a p-type semiconductor layer containing a p-type impurity on an n-type semiconductor layer containing an n-type impurity;

an ion implantation process that ion-implants at least one of the n-type impurity and the p-type impurity into a region of the p-type semiconductor layer located in the edge termination region; and

a heat treatment process that performs a heat treatment to activate the ion-implanted impurity,

wherein the ion implantation process and the heat treatment process are performed such that the p-type impurity of the p-type semiconductor layer is diffused into the n-type semiconductor layer to form a p-type impurity containing region in at least a part of the n-type semiconductor layer and below a region of the p-type semiconductor layer into which the ion implantation has been performed,

wherein a p-type impurity concentration of the p-type impurity containing region is less than a p-type impurity concentration of an area of the p-type semiconductor layer located outside of the region of the p-type semiconductor layer that is ion implanted in the ion implantation process, and

wherein the ion implantation process ion-implants the n-type impurity and the p-type impurity into the p-type semiconductor layer located in the edge termination region.