IP Library Granted Patent US 11,300,551
Granted Patent B2
US 11,300,551 · App. 15/920,455 · Granted Apr 12, 2022

Nano sensor

Inventor: Bao Tran (Saratoga, CA)
G01N33/0034G01N27/122G01N27/128G01N27/4146G01N27/4148G11B9/14G11C11/21G11C11/54G11C13/004G11C13/0023G11C13/02G11C13/04H01L27/2463H01L45/12H01L45/1233H01L45/1253H01L45/16H01L51/4226B82Y10/00B82Y15/00B82Y40/00H01L51/4253Y02E10/549Y10S977/762Y10S977/775Y10S977/938Y10S977/957
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Quick Facts
Patent No.
US 11,300,551
App. No.
15/920,455
Granted
Apr 12, 2022
Kind
B2
Abstract

A device includes an upper metallic layer, a lower layer, and a nano sensor array positioned between the upper and lower layers to detect a presence of a gas, a chemical, or a biological object, wherein each sensor's electrical characteristic changes when encountering the gas, chemical or biological object.

Claims (29)

1. A device, comprising:

a nano sensor array to detect a presence of a gas, a chemical, or a biological object, wherein each sensor's electrical characteristic changes when encountering the gas, chemical or biological object and a neural network coupled to the nano sensor array; and a sensor film readily oxidized by oxygen or reduced by oxygen or hydrogen.

2. The device of claim 1 , comprising switching medium disposed in rows and columns.

3. The device of claim 1 , further comprising a driver circuit for selectively controlling first signal electrodes or second signal electrodes.

4. The device of claim 3 , wherein the circuit includes one or more of a sense amplifier, an input-output buffer, an X address decoder, a Y address decoder, and an address buffer.

5. The device of claim 1 , wherein the substrate includes a silicon-on-insulator wafer.

6. The device of claim 1 , wherein the array comprises a memory.

7. The device of claim 1 , comprising multiple levels of stacked cells each having a switching medium sandwiched between the upper and lower layers.

8. The device of claim 1 , wherein the nano sensor is compatible with CMOS fabrication.

9. The device of claim 1 , further comprising an array of redundant sensor elements.

10. The device of claim 1 , comprising gold electrodes where the nano-sensors self-assemble.

11. The device of claim 1 comprising a permeable layer is formed above the nano-sensors to protect the nano sensor array and semiconductor elements while allowing the gas, chemical or biological object to get to the nano sensor array.

12. The device of claim 11 , wherein, the layer is a gas sensitive film containing or covering nano sensors and when the gas sensitive film is exposed to different the gas, chemical or biological object, a resistance changes.

13. A device, comprising:

a nano sensor array to detect a presence of a gas, a chemical, or a biological object, wherein each sensor's electrical characteristic changes when encountering the gas, chemical or biological object and a neural network coupled to the nano sensor array;

a matrix film on the nano sensor array, wherein upon oxidation or reduction, a physical parameter of the matrix film changes to measure gas concentration.

14. A device, comprising:

a nano sensor array to detect a presence of a gas, a chemical, or a biological object, wherein each sensor's electrical characteristic changes when encountering the gas, chemical or biological object and a neural network coupled to the nano sensor array, wherein the nano sensor array is ultrasonically activated to detect the gas, chemical or biological object.

15. A device, comprising:

a nano sensor array to detect a presence of a gas, a chemical, or a biological object, wherein each sensor's electrical characteristic changes when encountering the gas, chemical or biological object and a neural network coupled to the nano sensor array, wherein the nano sensor array is deposited over an ultrasonic vibrator.

16. The device of claim 15 , wherein when the gas, chemical or biological object is absorbed by the nano sensor array and change mechanical property that influence vibration amplitude or phase and detected by monitoring vibrational characteristics of an oscillator.

17. The device of claim 16 , wherein bulk wave detection is used to detect mass loading that occurs when minute quantities of materials are deposited over the surface of the oscillator.

18. A device, comprising:

a resistive, optical or magnetic nano sensor fabricated on a substrate; and

a neural network or learning machine fabricated on the substrate receiving data from the nano sensor to be trained to recognize data from the sensor.

19. A electronic device, comprising:

a first layer fabricated in silicon using semiconductor fabrication techniques;

a second layer formed next to the first layer to provide a neural network or learning machine and data storage, the second layer having a lower layer formed next to the first layer; a resistive sensor element;

and an upper layer formed next to the resistive element, wherein resistance changes when encountering a gas, a chemical, or a biological object.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 24, 2020
From: RONDEVOO TECHNOLOGIES LLC
To: TRAN, BAO
Reel/Frame 053871/0047 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 22, 2019
From: TRAN, BAO
To: RONDEVOO TECHNOLOGIES, LLC
Reel/Frame 048678/0392 →
Continuity (11)
Continuation 15244991 · Aug 23, 2016
Continuation 14802174 · Jul 17, 2015
Continuation 14150654 · Jan 8, 2014
Continuation 13773551 · Feb 21, 2013
Continuation 13300571 · Nov 19, 2011
Continuation 12905069 · Oct 14, 2010
Continuation 12617198 · Nov 12, 2009
Continuation 12348904 · Jan 5, 2009
Continuation 11867566 · Oct 4, 2007
Continuation 11064364 · Feb 23, 2005
Related Publication 20180217117A1 · Aug 2, 2018