Method of processing substrate, substrate processing apparatus, recording medium, and method of manufacturing semiconductor device
There is provided a technique that includes: forming a film containing a main element, carbon and nitrogen on a pattern formed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first layer containing the main element by supplying a precursor, which contains the main element constituting the film to be formed, to the substrate having the pattern; and (b) forming a second layer containing the main element, carbon and nitrogen by supplying a first reactant, which contains carbon and nitrogen, to the substrate so that a substance obtained by decomposing a portion of the first reactant is adsorbed on the first layer.
1. A method of processing a substrate, comprising:
forming a SiOCN film on a concavo-convex structure formed on a surface of the substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
(a) forming a first layer by supplying a precursor including hexachlorodisilane to the substrate;
(b) forming a second layer by supplying a first reactant including triethylamine to the substrate so that a substance obtained by decomposing a portion of the first reactant is adsorbed on the first layer; and
(c) forming a third layer by supplying a second reactant, which contains oxygen, to the substrate to oxidize the second layer,
wherein a supply time of the first reactant in (b) per cycle is set to be 10 to 15 times a supply time of the precursor in (a) per cycle, and set to be 10 to 20 times a supply time of the second reactant in (c) per cycle.
2. The method according to claim 1 , wherein in (b), the first reactant is supplied until at least one of a nitrogen concentration and a carbon concentration in an adsorption layer of the substance formed on each of at least an upper surface, a side surface and a lower surface of the concavo-convex structure is equalized.
3. The method according to claim 1 , wherein in (b), in a period of performing one cycle, the first reactant is intermittently supplied.
4. The method according to claim 3 , wherein a supply time of the first reactant per pulse in (b) in one cycle is set to be shorter than the supply time of the precursor in (a) per cycle.
5. The method according to claim 3 , wherein a supply time of the first reactant per pulse in (b) in one cycle is set to be shorter than the supply time of the second reactant in (c) per cycle.
6. The method according to claim 1 , wherein in (b), in a period of performing one cycle, the act of supplying the first reactant and a purge operation of purging an interior of a process chamber are alternately and repeatedly performed multiple times.
7. A method of manufacturing a semiconductor device comprising the method of claim 1 .
8. The method according to claim 1 , wherein the supply time of the first reactant in (b) per cycle is set to be equal to or longer than 100 seconds.
9. The method according to claim 1 , wherein the supply time of the first reactant in (b) per cycle is set to be equal to or longer than 130 seconds.
10. The method according to claim 1 , wherein the supply time of the first reactant in (b) per cycle is set to be equal to or longer than 150 seconds.
11. The method according to claim 1 , wherein the supply time of the first reactant in (b) per cycle is set to be equal to or longer than 195 seconds.
12. A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process in a substrate processing apparatus, the process comprising:
forming a SiOCN film on a concavo-convex structure formed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
(a) forming a first layer by supplying a precursor including hexachlorodisilane to the substrate;
(b) forming a second layer by supplying a first reactant including triethylamine to the substrate so that a substance obtained by decomposing a portion of the first reactant is adsorbed on the first layer; and
(c) forming a third layer by supplying a second reactant, which contains oxygen, to the substrate to oxidize the second layer,
wherein a supply time of the first reactant in (b) per cycle is set to be 10 to 15 times a supply time of the precursor in (a) per cycle, and set to be 10 to 20 times a supply time of the second reactant in (c) per cycle.