Polishing composition and method of polishing a substrate having enhanced defect inhibition

1. A chemical mechanical polishing composition, comprising, as initial components:

water;

an abrasive;

an inorganic salt of an alkali metal or ammonium or mixtures thereof;

a benzyltrialkyl quaternary ammonium compound having formula (I):

wherein R 1 , R 2 and R 3 are each independently chosen from a (C 1 -C 4 )alky group; and a hydroxyl-containing quaternary ammonium compound having formula (II):

wherein R 4 , R 5 , R 6 is each independently chosen from H and an alkyl group; wherein R 7 is an alkylene group.

2. The chemical mechanical polishing composition of claim 1 , wherein the chemical mechanical polishing composition comprises, as initial components:

water;

0.1 to 40 wt % of the abrasive;

0.001 to 5 wt % of inorganic salt of an alkali metal or ammonium or mixtures thereof;

0.001 to 1 wt % of benzyltrialkyl quaternary ammonium compound having formula (I); and,

0.001 to 1 wt % of the hydroxyl-containing quaternary ammonium compound having formula (II).

3. The chemical mechanical polishing composition of claim 1 , wherein the chemical mechanical polishing composition comprises, as initial components:

water;

0.1 to 40 wt % of the abrasive;

0.001 to 5 wt % of inorganic salt of an alkali metal or an ammonium salt or mixtures thereof, wherein the alkali metal is chosen from one or more of Li + , Na + , K + , and Cs + ; and anions are chosen from one or more of nitrate, carbonate, halide, bicarbonate, phosphate, biphosphate, pyrophosphate, triphosphate, sulfate;

0.001 to 1 wt % of benzyltrialkyl quaternary ammonium compound having formula (I), wherein the anion in formula (I) is chosen from one or more of hydroxide, halide, nitrate, sulfate, phosphate, acetate;

0.001 to 1 wt % of a hydroxyl-containing quaternary ammonium compound having formula (II), wherein the anion of formula (II) is chosen from one or more of hydroxide, halide, nitrate, sulfate, phosphate, acetate.

4. The chemical mechanical polishing slurry composition of claim 1 , wherein a pH of the chemical mechanical polishing composition is >pH 7.

5. A method for chemical mechanical polishing of a substrate, comprising:

providing a substrate, wherein the substrate comprises silicon oxide;

providing a chemical mechanical polishing composition according to claim 1 ;

providing a chemical mechanical polishing pad with a polishing surface;

creating dynamic contact at an interface between the polishing surface of the chemical mechanical polishing pad and the substrate with a down force of 0.69 to 69 kPa; and

dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate;

wherein the chemical mechanical polishing composition provided has a pH of >7;

wherein the substrate is polished; and, wherein at least some of the silicon oxide is removed from the substrate.

6. The method of claim 5 , wherein the chemical mechanical polishing composition provided comprises, as initial components:

water;

0.1 to 40 wt % of the abrasive, wherein the abrasive is a colloidal silica abrasive having an average particle size of 20 to 200 nm;

0.001 to 5 wt % of inorganic salt of an alkali metal or an ammonium salt

0.001 to 1 wt % of benzyltrialkyl quaternary ammonium compound having formula (I); and,

0.001 to 1 wt % of the hydroxyl-containing quaternary ammonium compound having formula (II),

wherein the chemical mechanical polishing composition provided has a pH>7.

7. The method of claim 6 , wherein the substrate comprises silicon oxide and wherein the chemical mechanical polishing composition exhibits a silicon oxide removal rate of 1,000 to 6,000 Å/min.

8. The method of claim 6 , wherein the substrate comprises silicon oxide and wherein the chemical mechanical polishing slurry composition exhibits a pst-HF scratch defects <100 per wafer.