Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

1. A method of manufacturing a semiconductor device, comprising:

forming a film on a substrate in a process chamber by performing:

supplying a precursor gas to the substrate through a first nozzle; and

supplying at least one selected from a group consisting of an oxygen-containing gas and a nitrogen-and-hydrogen-containing gas to the substrate through a second nozzle that is configured such that gas stagnation on a surface of the second nozzle caused by the second nozzle is less than gas stagnation on a surface of the first nozzle caused by the first nozzle, or such that contact of the second nozzle with gas staying on the surface of the second nozzle is less than contact of the first nozzle with gas staying on the surface of the first nozzle.

2. The method according to claim 1 , wherein the second nozzle includes a hollow tubular portion and at least one gas supply hole installed at a side periphery of the tubular portion, and

wherein a diameter of the at least one gas supply hole increases from a radial inner side to a radial outer side of the tubular portion.

3. The method according to claim 2 , wherein the at least one gas supply hole includes a plurality of gas supply holes arranged along a longitudinal direction of the tubular portion, and

wherein a predetermined gas supply hole among the plurality of gas supply holes and a gas supply hole adjacent to the predetermined gas supply hole among the plurality of gas supply holes are connected to each other without a gap, or overlap with each other on a side peripheral surface of the tubular portion.

4. The method according to claim 1 , wherein the second nozzle includes a hollow tubular portion and at least one gas supply hole installed at a side periphery of the tubular portion, and

wherein a region of a side peripheral surface of the tubular portion, which configures the at least one gas supply hole, forms a protrusion portion by protruding outward from a radial inner side to a radial outer side of the tubular portion more than other regions of the tubular portion.

5. The method according to claim 4 , wherein a region around the protrusion portion on the side peripheral surface of the tubular portion is flat.

6. The method according to claim 4 , wherein the protrusion portion is formed by cutting a part of the tubular portion.

7. The method according to claim 4 , wherein the protrusion portion is formed by cutting a periphery of a part of the tubular portion while leaving the part of the tubular portion.

8. The method according to claim 1 , wherein each of the first nozzle and the second nozzle includes a hollow tubular portion and at least one gas supply hole installed at a side periphery of the tubular portion, and

wherein an outer diameter of the tubular portion of the second nozzle is smaller than an outer diameter of the tubular portion of the first nozzle.

9. The method according to claim 8 , wherein a cross-sectional shape of the tubular portion of the second nozzle is an ellipse, and

wherein at least one gas supply hole installed at the tubular portion of the second nozzle is configured to inject gas along a major axis direction of the ellipse.

10. The method according to claim 1 , wherein the second nozzle includes a hollow tubular portion and at least one gas supply hole formed by laser-processing a side periphery of the tubular portion.

11. The method according to claim 1 , wherein the act of forming the film on the substrate includes performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:

supplying the precursor gas to the substrate;

supplying the oxygen-containing gas to the substrate; and

supplying the nitrogen-and-hydrogen-containing gas to the substrate.

12. The method according to claim 1 , wherein the act of forming the film on the substrate includes performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:

supplying the precursor gas to the substrate;

supplying a carbon-containing gas to the substrate;

supplying the oxygen-containing gas to the substrate; and

supplying the nitrogen-and-hydrogen-containing gas to the substrate.

13. The method according to claim 11 , wherein the act of supplying the oxygen-containing gas to the substrate and the act of supplying the nitrogen-and-hydrogen-containing gas to the substrate are performed using the same nozzle.

14. The method according to claim 11 , wherein the act of supplying the oxygen-containing gas to the substrate and the act of supplying the nitrogen-and-hydrogen-containing gas to the substrate are performed using different nozzles.

15. A substrate processing apparatus, comprising:

a process chamber configured to accommodate a substrate;

a first supply system configured to supply a precursor gas into the process chamber through a first nozzle;

a second supply system configured to supply at least one selected from a group consisting of an oxygen-containing gas and a nitrogen-and-hydrogen-containing gas into the process chamber through a second nozzle that is configured such that gas stagnation on a surface of the second nozzle caused by the second nozzle is less than gas stagnation on a surface of the first nozzle caused by the first nozzle, or such that contact of the second nozzle with gas staying on the surface of the second nozzle is less than contact of the first nozzle with gas staying on the surface of the first nozzle; and

a controller configured to control the first supply system and the second supply system to:

form a film on the substrate in the process chamber by performing:

supplying the precursor gas to the substrate; and

supplying the at least one selected from the group consisting of the oxygen-containing gas and the nitrogen-and-hydrogen-containing gas to the substrate.

16. A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process of:

forming a film on a substrate in a process chamber by performing:

supplying a precursor gas to the substrate through a first nozzle; and

supplying at least one selected from a group consisting of an oxygen-containing gas and a nitrogen-and-hydrogen-containing gas to the substrate through a second nozzle that is configured such that gas stagnation on a surface of the second nozzle caused by the second nozzle is less than gas stagnation on a surface of the first nozzle caused by the first nozzle, or such that contact of the second nozzle with gas staying on the surface of the second nozzle is less than contact of the first nozzle with gas staying on the surface of the first nozzle.