Methods for detecting and mitigating memory media degradation and memory devices employing the same

1. A memory device, comprising:

a non-volatile memory array; and

control circuitry configured to:

store a value corresponding to a number of activate commands received at the memory device;

update the value in response to receiving an activate command received from a host device; and

trigger, in response to the value exceeding a predetermined threshold, a remedial action performed by the memory device.

2. The memory device of claim 1 , wherein the remedial action comprises requesting a refresh command from the host device and scheduling a further remedial action.

3. The memory device of claim 2 , wherein the further remedial action comprises a wear leveling operation performed in response to receiving the requested refresh command.

4. The memory device of claim 1 , wherein the remedial action comprises scheduling a wear level operation to be performed in response to a subsequent refresh command received from the host device.

5. The memory device of claim 1 , wherein the remedial action comprises performing a wear leveling operation without waiting to receive a refresh command from the host device.

6. The memory device of claim 1 , wherein updating the value comprises updating the value by an amount corresponding to a device temperature, a device voltage, a device up-time, or a combination thereof.

7. The memory device of claim 1 , wherein the remedial action comprises updating a sense amplifier weight, a read window budget, a reference voltage, a sample timing, or a combination thereof.

8. The memory device of claim 1 , wherein the remedial action comprises resetting the value.

9. The memory device of claim 1 , wherein the value is a first value, the remedial action is a first remedial action, the predetermined threshold is a first predetermined threshold, and the control circuitry is further configured to:

store a second value corresponding to a number of refresh operations performed by the memory device;

update the second value in response to performing a refresh operation; and

trigger, in response to the value exceeding a second predetermined threshold, a second remedial action performed by the memory device.

10. The memory device of claim 9 , wherein the second remedial action comprises updating one or more of a sense amplifier weight, a read window budget, a reference voltage, a sample timing, or a combination thereof.

11. The memory device of claim 9 , wherein the second remedial action comprises resetting the second value.

12. The memory device of claim 1 , wherein a single semiconductor die comprises the non-volatile memory array and the control circuitry.

13. The memory device of claim 1 , wherein the non-volatile array comprises a flash array, a phase change array, a ferroelectric array, or a magnetoresistive array.

14. The memory device of claim 1 , wherein the control circuitry is configured to store the value in the memory array.

15. A method of operating a memory device including a memory array, the method comprising:

storing a value corresponding to a number of activate commands received at the memory device;

updating the value in response to receiving an activate command received from a host device; and

triggering, in response to the value exceeding a predetermined threshold, a remedial action performed by the memory device.

16. The method of claim 15 , wherein the remedial action comprises requesting a refresh command from the host device and scheduling a further remedial action.

17. The method of claim 16 , wherein the further remedial action comprises a wear leveling operation performed in response to receiving the requested refresh command.

18. The method of claim 15 , wherein the remedial action comprises scheduling a wear level operation to be performed in response to a subsequent refresh command received from the host device.

19. The method of claim 15 , wherein the remedial action comprises performing a wear leveling operation without waiting to receive a refresh command from the host device.

20. The method of claim 15 , wherein updating the value comprises updating the value by an amount corresponding to a device temperature, a device voltage, a device up-time, or a combination thereof.

21. The method of claim 15 , wherein the remedial action comprises updating a sense amplifier weight, a read window budget, a reference voltage, a sample timing, or a combination thereof.

22. The method of claim 15 , wherein the remedial action comprises resetting the value.

23. The method of claim 15 , wherein the value is a first value, the remedial action is a first remedial action, the predetermined threshold is a first predetermined threshold, and further comprising:

storing a second value corresponding to a number of refresh operations performed by the memory device;

updating the second value in response to performing a refresh operation; and

triggering, in response to the second value exceeding a second predetermined threshold, a second remedial action performed by the memory device.

24. The method of claim 23 , wherein the second remedial action comprises updating one or more of a sense amplifier weight, a read window budget, a reference voltage, a sample timing, or a combination thereof.

25. The method of claim 23 , wherein the second remedial action comprises resetting the second value.

26. A method of operating a memory system, comprising:

transmitting, to a memory device, an activate command;

receiving from the memory device, based at least in part on the activate command, a request to issue a refresh command; and

issuing, based at least in part on the request, the refresh command.