Electronic device with adaptive vertical interconnect and fabricating method thereof
View Patent ↗Electronic components and an electronic device comprising one or more of the electronic components, and a method of manufacturing the electronic components and an electronic device comprising one or more of the electronic components. As non-limiting examples, various aspects of this disclosure provide vertical interconnect components and various other vertical electronic components, and a method of manufacturing thereof, and an electronic device comprising one or more of the vertical interconnect components and various other vertical electronic components, and a method of manufacturing thereof.
1. A method of manufacturing an electronic device, the method comprising:
receiving a first component, the first component comprising:
a first molded layer;
a component conductive layer on a first side of the first molded layer; and
a second molded layer directly on the first side of the first molded layer and on the component conductive layer;
mounting a bottom side of a semiconductor die to a top side of a substrate;
mounting the first component to the top side of the substrate such that the first side of the first molded layer faces laterally; and
forming a molded package layer comprising a molding compound, wherein the molding compound comprises a bottom side that covers at least a portion of the top side of the substrate, and the molding compound covers at least a portion of lateral sides of the semiconductor die, and at least a portion of the first and second molded layers of the first component.
2. The method of claim 1 , further comprising removing the substrate.
3. The method of claim 1 , further comprising forming a signal distribution structure (SDS) over at least the molding compound, the semiconductor die, and the first component.
4. The method of claim 3 , wherein the signal distribution structure comprises an SDS conductive layer that electrically connects a die pad of the semiconductor die to a first end of the component conductive layer.
5. The method of claim 4 , wherein:
the signal distribution structure comprises a dielectric layer comprising a first aperture through which the die pad of the semiconductor die is exposed from the dielectric layer, and a second aperture through which the first end of the component conductive layer is exposed from the dielectric layer; and
the SDS conductive layer extends into the first and second apertures.
6. The method of claim 1 , wherein the molding compound of the molded package body laterally surrounds the entire semiconductor die and the entire first component.
7. The method of claim 6 , wherein a top side of the molding compound is coplanar with a top surface of the first component.
8. The method of claim 1 , wherein the component conductive layer comprises a plurality of parallel straight-line traces that function as conductive vias extending directly vertically through the molded package layer.
9. The method of claim 1 , wherein:
the component conductive layer is configured as a passive electronic component;
a first end of a first lead of the passive electronic component is exposed at a top side of the mounted first component; and
a second end of the passive electronic component is exposed at a bottom side of the mounted first component.
10. The method of claim 1 , wherein:
the substrate comprises a signal distribution structure; and
said mounting the bottom side of the semiconductor die to the top side of the substrate comprises attaching a die pad on the bottom side of the semiconductor die to the signal distribution structure of the substrate.
11. The method of claim 1 , wherein the first molded layer is formed by performing a molding process.
12. A method of manufacturing an electronic device, the method comprising:
forming a first component, said forming the first component comprising:
forming a first molded layer;
forming a component conductive layer on a top side of the first molded layer; and
forming a second molded layer on the top side of the first molded layer and on the component conductive layer;
mounting a bottom side of a semiconductor die to a top side of a substrate; and
rotating the first component and mounting the first component to the top side of the substrate, such that the top side of the first molded layer faces laterally.
13. The method of claim 12 , further comprising forming a molded package layer comprising a molding compound, wherein the molding compound comprises a bottom side that covers at least a portion of the top side of the substrate, and the molding compound covers at least a portion of lateral sides of the semiconductor die, and at least a portion of the first and second molded layers of the first component.
14. The method of claim 13 , wherein the molding compound comprises a top side that is coplanar with a top side of the first component.
15. The method of claim 13 , further comprising:
removing the substrate; and
forming a signal distribution structure on the bottom side of semiconductor die, on the bottom side of the molding compound, and on the first component.
16. The method of claim 13 , wherein the component conductive layer comprises a plurality of parallel straight-line traces that function as conductive vias extending directly vertically through the molded package layer.
17. The method of claim 12 , wherein the first molded layer is formed by performing a molding process.
18. The method of claim 12 , wherein said forming the first component comprises:
forming an array of components in a wafer form, the array of components comprising the first component; and
singulating the first component from the array of components.
19. A method of manufacturing an electronic device, the method comprising:
receiving a first component comprising:
a first component side comprising only a first molded layer;
a component conductive layer on the first molded layer;
a second component side, opposite the first component side, comprising only a second molded layer;
a third component side that extends between the first and second component sides and comprises an exposed first end of the component conductive layer; and
a fourth component side, opposite the third component side, that comprises an exposed second end of the component conductive layer; and
forming the electronic device, said forming the electronic device comprising:
coupling a bottom die side of a semiconductor die to a top side of a carrier, the bottom die side of the semiconductor die comprising a die pad;
coupling the third component side to the top side of the carrier;
forming a molded package body comprising a molding compound that covers at least a portion of the top side of the carrier, at least a portion of lateral sides of the semiconductor die, and at least a portion of the first and second component sides;
removing the carrier; and
forming a signal distribution structure on the bottom die side, on a bottom side of the molding compound, and on the third component side.
20. The method of claim 19 , wherein the signal distribution structure comprises:
a dielectric layer comprising a first aperture through which the die pad is exposed and a second aperture through which the first end of the component conductive layer is exposed; and
a conductive layer that electrically connects the die pad to the first end of the component conductive layer.
21. The method of claim 19 , wherein a top side of the molding compound is coplanar with the fourth component side.
22. The method of claim 19 , wherein the component conductive layer comprises a straight-line trace that extends directly from the first end of the component conductive layer to the second end of the component conductive layer.
23. The method of claim 19 , wherein the first molded layer is formed by performing a molding process.