IP Library Granted Patent US 10,648,081
Granted Patent B2
US 10,648,081 · App. 15/938,022 · Granted May 12, 2020

Method of burying sample trench

Inventor: Shota Torikawa (Tokyo, JP)
Assignee: Hitachi High-Tech Science Corporation
C23C16/487C23C16/045C23C16/047C23C16/30
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Quick Facts
Patent No.
US 10,648,081
App. No.
15/938,022
Granted
May 12, 2020
Kind
B2
Abstract

The invention provides a method of burying trenches of a sample comprises at least the steps of: from the sample having the trenches extending from one surface into a depth direction, cutting a sample piece of a small part including the trenches; and by irradiating an electron beam toward the inside of the trenches from a side surface extending along the depth direction of the sample piece and simultaneously injecting a compound gas into the inside of the trenches from openings on the side of the one surface of the trench, decomposing the compound gas with secondary electrons generated by irradiation of the electron beam and depositing constituents of the compound gas within the trenches. Therefore, the method can bury the trenches uniformly without generating cavities within the trenches even if the trenches of the sample piece have a high aspect ratio deep in a depth direction.

Claims (7)

1. A method of burying a trench of a sample comprising at least the steps of:

from the sample having the trench extending from one surface of the sample into a depth direction of the sample and having an opening on the one surface of the sample, cutting a sample piece of a small part including the trench in order that the trench has an inner wall surface; and

by irradiating an electron beam toward the inside of the trench and to the inner wall surface of the trench from a side surface extending along the depth direction of the sample piece and at the same time injecting a compound gas into the inside of the trench from the opening, decomposing the compound gas with secondary electrons generated by irradiation of the electron beam to the inner wall surface of the trench and depositing constituents of the compound gas within the trench.

2. The method of burying a trench of a sample according to claim 1 ,

wherein in said depositing step, the constituents of the compound gas are sequentially deposited toward the opening from the bottom of the trench by scanning the electron beam toward the openings from the bottom of the trench.

3. The method of burying a trench of a sample according to claim 1 ,

wherein in said depositing step, an acceleration voltage of the electron beam is varied in accordance with a distance from the side surface of the sample piece to the inner wall surface of the trench.

Assignments (3)
CHANGE OF NAME Recorded Sep 17, 2025
From: HITACHI HIGH-TECH SCIENCE CORPORATION
To: HITACHI HIGH-TECH ANALYSIS CORPORATION
Reel/Frame 072905/0225 →
CHNAGE OF ADDRESS Recorded Sep 17, 2025
From: HITACHI HIGH-TECH SCIENCE CORPORATION
To: HITACHI HIGH-TECH SCIENCE CORPORATION
Reel/Frame 072909/0725 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 11, 2018
From: TORIKAWA, SHOTA
To: HITACHI HIGH-TECH SCIENCE CORPORATION
Reel/Frame 045505/0018 →
Priority Claims (1)
JP 2017-062507 · Mar 28, 2017 · national
Continuity (1)
Related Publication 20180282870A1 · Oct 4, 2018