Charged particle device and wiring method
An object of the present invention is to provide: a wiring method in which wiring is performed in a vacuum chamber of a charged particle device without using gas deposition or the like; and a charged particle device. In order to achieve the above-described object, the present invention proposes: a wiring method in which a wiring line composed of an ionic liquid is formed by dropping an ionic liquid on a sample or preparing an ionic liquid on a sample table, on which a sample is placed in advance, and irradiating a wiring track between a wiring start point and a wiring end point with a charged particle beam; and a charged particle device. According to this configuration, wiring can be performed in a vacuum chamber of a charged particle device without using a gas deposition method or the like.
1. A wiring method, comprising:
placing an ionic liquid on a wiring track of a sample to be subjected to wiring, prior to irradiation of the sample using a charged particle beam; and
irradiating the sample having the ionic liquid thereon with the charged particle beam to perform the wiring on the sample, the irradiating of the sample including forming a wiring line by attraction of the ionic liquid to a charged portion of the sample, and
wherein an irradiation position of the charged particle beam is moved along the wiring track.
2. The wiring method according to claim 1 , wherein
the ionic liquid is dropped on the sample, and the ionic liquid dropped on the sample is irradiated with the charged particle beam.
3. A wiring method, comprising:
placing an ionic liquid at a first position on a sample table to be subject to wiring and a sample at a second position on the sample table, the ionic liquid and the sample being apart from each other;
irradiating the ionic liquid with a charged particle beam to perform wiring on the sample table; and
forming a wiring line by moving an irradiation position of the charged particle beam moved from the first position where the ionic liquid is placed to the second position where the sample is placed.
4. The method according to claim 1 , wherein
the ionic liquid is at a first position on the sample, and
the irradiation position of the charged particle beam is moved along the wiring track from the ionic liquid at the first position to a target position on the sample, the first position and the target position being apart from each other.
5. The method according to claim 1 , wherein the irradiating of the sample includes irradiating the wiring track having the ionic liquid thereon.
6. The method according to claim 1 , wherein the irradiation position is sequentially moved along the wiring track as time passes.
7. The method according to claim 1 , wherein the irradiation position is moved so that one irradiation position and a subsequently irradiated irradiation position overlap with each other.
8. The method according to claim 1 , wherein the irradiation position of the charged particle beam is moved along the wiring track using a deflector.
9. The method according to claim 3 , wherein the forming of the wiring line is caused by attraction of the ionic liquid to a charged portion of the sample.
10. The method according to claim 3 , wherein
the ionic liquid at the first position is a first ionic liquid supply, and
the method further comprises:
placing a second ionic liquid supply at the second position where the sample is placed, the second ionic liquid supply being smaller than the first ionic liquid supply.
11. The method according to claim 3 , wherein the forming of the wiring line includes moving the sample table, using a sample stage coupled to the sample table, so that the irradiation position of the charged particle beam is moved along a wiring track of the sample table.
12. The method according to claim 3 , wherein the ionic liquid is placed in an ionic liquid holding member of the sample table.
13. The method according to claim 3 , wherein the irradiation position is sequentially moved along a wiring track of the sample table as time passes.
14. The method according to claim 3 , wherein the irradiation position is moved so that one irradiation position and a subsequently irradiated irradiation position overlap with each other.