IP Library Granted Patent US 10,784,191
Granted Patent B2
US 10,784,191 · App. 15/940,273 · Granted Sep 22, 2020

Interface structures and methods for forming same

Inventors: Shaowu Huang (Sunnyvale, CA); Belgacem Haba (Saratoga, CA); Javier A. DeLaCruz (San Jose, CA)
Assignee: Invensas Bonding Technologies, Inc.
H01L23/5223H01L23/49811H01L23/5227H01L23/5385H01L24/69H01L25/0657H01L23/49822H01L24/08H01L2224/08147H01L2224/80099H01L2224/80895H01L2224/80896H01L2224/80948H01L2224/80986H01L2924/30105H01L2924/30107H03H7/0115H03H2001/0078H03H2001/0085
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,784,191
App. No.
15/940,273
Granted
Sep 22, 2020
Kind
B2
Abstract

A stacked and electrically interconnected structure is disclosed. The structure can comprise a first element and a second element directly bonded to the first element along a bonding interface without an intervening adhesive. A filter circuit can be integrally formed between the first and second elements along the bonding interface.

Claims (33)

1. A stacked and electrically interconnected structure comprising:

a first element comprising a first non-conductive feature; and

a second element comprising a second non-conductive feature, the second non-conductive feature directly bonded to the first non-conductive feature of the first element along a bonding interface without an intervening adhesive,

wherein a filter circuit is integrally formed vertically between the first and second elements along the bonding interface.

2. The structure of claim 1 , further comprising an interface structure between the first and second elements, the interface structure comprising the bonding interface, wherein the filter circuit includes an inductive electrical pathway between the first element and the second element and a capacitive electrical pathway between the first element and the second element.

3. The structure of claim 2 , wherein the inductive electrical pathway is in parallel with the capacitive electrical pathway.

4. The structure of claim 3 , wherein the interface structure comprises a first conductive interface feature, a second conductive interface feature, and a non-conductive interface feature disposed between the first and second conductive interface features the non-conductive interface feature comprising at least one of the first and second non-conductive features.

5. The structure of claim 4 , further comprising a conductive interconnect extending from the first conductive interface feature, through the non-conductive interface feature, to the second conductive interface feature, the inductive electrical pathway extending along the first conductive interface feature, the conductive interconnect, and the second conductive interface feature.

6. The structure of claim 5 , wherein at least one of the first and second conductive interface features comprises at least one turn about an axis perpendicular to the bonding interface.

7. The structure of claim 4 , wherein the capacitive electrical pathway extends along the first conductive interface feature, the non-conductive interface feature, and the second conductive interface feature.

8. The structure of claim 2 , wherein the inductive electrical pathway is in series with the capacitive electrical pathway.

9. The structure of claim 8 , wherein the interface structure comprises a first conductive interface feature, a second conductive interface feature, and a non-conductive interface feature disposed between the first and second conductive interface features, wherein the inductive electrical pathway is disposed along the second conductive interface feature and wherein the capacitive electrical pathway extends along the first conductive interface feature, the non-conductive interface feature, and the second conductive interface feature, the non-conductive interface feature comprising at least one of the first and second non-conductive features.

10. The structure of claim 9 , wherein the second conductive interface feature comprises at least one turn about an axis perpendicular to the bonding interface.

11. The structure of claim 9 , wherein the filter circuit includes a second inductive electrical pathway between the first and second elements, the second inductive electrical pathway in series with the capacitive electrical pathway and the inductive electrical pathway.

12. The structure of claim 11 , wherein the second inductive electrical pathway is disposed along the first conductive interface feature.

13. A stacked and electrically interconnected structure comprising:

a first element comprising a first non-conductive feature; and

a second element comprising a second non-conductive feature, the second non-conductive feature directly bonded to the first non-conductive feature of the first element; and

an interface structure disposed vertically between the first and second elements, the interface structure mechanically and electrically connecting the first and second elements, the interface structure comprising a filter circuit integrated within the interface structure, the filter circuit configured to pass electrical signals at a first range of frequencies and to attenuate electrical signals at a second range of frequencies.

14. The structure of claim 13 , wherein the filter circuit includes an inductive electrical pathway between the first element and the second element and a capacitive electrical pathway between the first element and the second element.

15. The structure of claim 14 , wherein the inductive electrical pathway is in parallel with the capacitive electrical pathway.

16. The structure of claim 15 , wherein the interface structure comprises a first conductive interface feature, a second conductive interface feature, and a non-conductive interface feature disposed between the first and second conductive interface features the non-conductive interface feature comprising at least one of the first and second non-conductive features.

17. The structure of claim 16 , further comprising a conductive interconnect extending from the first conductive interface feature, through the non-conductive interface feature, to the second conductive interface feature, the inductive electrical pathway extending along the first conductive interface feature, the conductive interconnect, and the second conductive interface feature.

18. The structure of claim 17 , wherein at least one of the first and second conductive interface features comprises at least one turn about an axis perpendicular to the bonding interface.

19. The structure of claim 16 , wherein the capacitive electrical pathway extends along the first conductive interface feature, the non-conductive interface feature, and the second conductive interface feature.

20. The structure of claim 13 , wherein the inductive electrical pathway is in series with the capacitive electrical pathway.

21. The structure of claim 20 , wherein the interface structure comprises a first conductive interface feature, a second conductive interface feature, and a non-conductive interface feature disposed between the first and second conductive interface features, wherein the inductive electrical pathway is disposed along the second conductive interface feature and wherein the capacitive electrical pathway extends along the first conductive interface feature, the non-conductive interface feature, and the second conductive interface feature, the non-conductive interface feature comprising at least one of the first and second non-conductive features.

22. A stacked and electrically interconnected structure comprising:

a first element comprising a first non-conductive feature; and

a second element comprising a second non-conductive feature, the second non-conductive feature directly bonded to the first non-conductive feature of the first element; and

an interface structure disposed vertically between the first and second elements, the interface structure mechanically and electrically connecting the first and second elements, the interface structure comprising an inductive electrical pathway between the first element and the second element and a capacitive electrical pathway between the first element and the second element.

23. The structure of claim 22 , wherein the inductive electrical pathway is in series with the capacitive electrical pathway.

24. The structure of claim 22 , wherein the inductive electrical pathway is in parallel with the capacitive electrical pathway.

Assignments (3)
CHANGE OF NAME Recorded Oct 20, 2025
From: INVENSAS BONDING TECHNOLOGIES, INC.
To: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.
Reel/Frame 073173/0300 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 5, 2020
From: HUANG, SHAOWU; HABA, BELGACEM; DELACRUZ, JAVIER A.
To: INVENSAS BONDING TECHNOLOGIES, INC.
Reel/Frame 053408/0626 →
SECURITY INTEREST Recorded Jun 1, 2020
From: ROVI SOLUTIONS CORPORATION; ROVI TECHNOLOGIES CORPORATION; ROVI GUIDES, INC.; TIVO SOLUTIONS INC.; VEVEO, INC.; INVENSAS CORPORATION; INVENSAS BONDING TECHNOLOGIES, INC.; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: BANK OF AMERICA, N.A.
Reel/Frame 053468/0001 →
Cited By (12)
US 12,635,510 US 12,640,483 US 12,642,110 US 12,667,031 US 12,690,488 US 12,696,816 US 12,702,064 US 12,707,941 US 12,707,964 US 12,713,942 US 12,713,943 US 12,713,983