Granted Patent B2

US 12,690,488 · App. 18/147,239 · Granted Jul 21, 2026

Inventors: Shaowu Huang (Sunnyvale, CA); Javier A. DeLaCruz (San Jose, CA); Liang Wang (Milpitas, CA); Rajesh Katkar (Milpitas, CA); Belgacem Haba (Saratoga, CA)

Assignee: Adeia Semiconductor Bonding Technologies Inc.

H10W76/60H10W44/20H10W76/12H10W44/209H10W44/248H10W74/00

Abstract

Claims (22)

1 . An integrated device package comprising:

an integrated device die; and

an element comprising an antenna structure, the element directly bonded to a surface of the integrated device die without an intervening adhesive, wherein an interface between the element and the surface of the integrated device die comprises a dielectric-to-dielectric direct bond.

2 . The integrated device package of claim 1 , wherein the element comprises silicon or glass.

3 . The integrated device package of claim 1 , further comprising a cavity disposed between the integrated device die and at least a portion of the antenna structure.

4 . The integrated device package of claim 3 , wherein the cavity is defined by the element and the integrated device die.

5 . The integrated device package of claim 3 , wherein the cavity is defined by a planar upper surface of the integrated device die and a recess in the element, or a planar surface of the element and a recess in the integrated device die.

6 . The integrated device package of claim 3 , wherein at least a portion of the integrated device die defines a majority of a bottom surface of the cavity.

7 . The integrated device package of claim 3 , wherein the cavity is filled with air.

8 . The integrated device package of claim 3 , wherein the cavity comprises a first wall having a wall surface indicative of an etching process.

9 . The integrated device package of claim 3 , wherein the cavity comprises a first wall and a second wall, the first wall and the second wall comprising two opposing sides of the cavity, the cavity having a width from the first wall to the second wall, the width being dimensioned to receive or transmit electromagnetic radiation at a frequency in a range of 24 GHz to 128 GHz, wherein the width is in a range of 0.5 mm to 12 mm.

10 . The integrated device package of claim 3 , wherein a wall of the cavity is constructed such that a surface roughness of the wall has a maximum roughness in a range of 0.1 μm to 2 μm.

11 . The integrated device package of claim 3 , wherein the antenna structure is disposed on or near an upper surface of the cavity, or on or near a top surface of the element away from the cavity.

12 . The integrated device package of claim 3 , further comprising a metal layer disposed in the cavity.

13 . The integrated device package of claim 1 , wherein the integrated device die comprises radio-frequency (RF) circuitry.

14 . The integrated device package of claim 1 , further comprising an electrical interconnect connecting the integrated device die and the antenna structure.

15 . The integrated device package of claim 14 , wherein the electrical interconnect is directly and electrically connected to the integrated device die.

16 . The integrated device package of claim 1 , wherein the element comprises a plurality of frame portions bonded together.

17 . The integrated device package of claim 1 , wherein the antenna structure comprises a parasitic patch and a feed patch.

18 . The integrated device package of claim 1 , wherein the integrated device die comprises one or more metal pads, wherein the element comprises an electrical interconnect, and wherein the integrated device die and the element are hybrid bonded to form an electrical connection between the electrical interconnect and the one or more metal pads.

19 . The integrated device package of claim 1 , wherein the integrated device die and the element are hybrid bonded.

20 . The integrated device package of claim 15 , wherein the element comprises a first frame portion directly bonded to a second frame portion, and wherein the second frame portion is directly bonded to the surface of the integrated device die.

Assignments (3)

Continuity (4)

References Cited (400)