SOI active layer with different surface orientation
A wafer having an SOI configuration and active regions having different surface orientations for different channel type transistors. In one example, semiconductor structures having a first surface orientation are formed on a donor wafer. Semiconductor structures having a second surface orientation are formed on a second wafer. Receptor openings are formed on the second wafer. The semiconductor structures having the first surface orientation are located in the receptor openings and transferred to the second wafer. The resultant wafer has semiconductor regions having a first surface orientation for a first channel type of transistor and semiconductor regions having a second surface orientation for a second channel type transistor.
1. A method of making a semiconductor device, comprising:
providing a first wafer having a semiconductor layer of a first surface orientation;
selectively etching the semiconductor layer to form semiconductor structures of the first surface orientation and receptor openings;
providing semiconductor structures of a second surface orientation different from the first surface orientation;
locating the semiconductor structures of the second surface orientation into the receptor openings;
forming transistors of a first type in the semiconductor structures of the first surface orientation; and
forming transistors of a second type different from the first type in the semiconductor structures of the second surface orientation;
wherein providing the semiconductor structures of the second surface orientation comprises
providing a second wafer having a semiconductor layer of the second surface orientation; and
selectively etching the semiconductor layer of the second wafer to form the semiconductor structures of the second surface orientation.
2. The method of claim 1 , wherein:
the first surface orientation is ( 100 );
the transistors of the first type are N channel transistors;
the second surface orientation is ( 110 ); and
the transistors of the second type are P channel transistors.
3. The method of claim 1 , wherein:
the first surface orientation is ( 110 );
the transistors of the first type are P channel transistors;
the second surface orientation is ( 100 ); and
the transistors of the second type are N channel transistors.
4. The method of claim 1 , wherein the second wafer comprises a semiconductor substrate layer, an insulating layer over the semiconductor substrate layer, and the semiconductor layer over the insulating layer.
5. The method of claim 4 , further comprising implanting hydrogen into the semiconductor substrate layer to form a damaged layer in the semiconductor substrate layer.
6. The method of claim 5 , wherein the locating the semiconductor structures of the second surface orientation comprises:
contacting the first and second wafers to each other to place the semiconductor structures of the second surface orientation into the receptor openings;
cleaving the semiconductor substrate layer along the damaged layer to leave a remaining portion of the semiconductor substrate layer adjacent to insulating layer;
removing the remaining portion of the semiconductor substrate layer;
removing the insulating layer; and
chemical-mechanical polishing the semiconductor structures of the first surface orientation and the semiconductor structures of the second surface orientation to leave surfaces that are substantially coplanar.
7. The method of claim 1 , wherein the semiconductor layer of the second wafer has receptor openings, the method further comprising:
locating the semiconductor structures of the first surface orientation into the receptor openings of the second wafer.
8. The method of claim 1 , wherein the locating the semiconductor structures of the second surface orientation comprises:
contacting the first and second wafers to each other to place the semiconductor structures of the second surface orientation into the receptor openings; and
cleaving the semiconductor layer of the second surface orientation thereby leaving the semiconductor structures of the second surface orientation in the receptor openings.
9. The method of claim 8 , wherein the cleaving further comprises:
implanting the semiconductor layer of the second wafer with hydrogen to form a damaged layer, wherein the cleaving occurs at the damaged layer.
10. The method of claim 8 , further comprising chemical-mechanical polishing the semiconductor structures of the first surface orientation and the semiconductor structures of the second surface on entation to leave surfaces on the semiconductor structures of the first surface orientation and the semiconductor structures of the second surface orientation that are substantially coplanar.
11. The method of claim 10 , further comprising forming isolation regions between the semiconductor structures of the first surface orientation and the semiconductor structures of the second surface orientation.
12. The method of claim 11 , further comprising:
locating the semiconductor structures of the second surface orientation into the receptor openings of the first wafer.
13. The method of claim 1 , further comprising forming isolation regions between the semiconductor structures of the first surface orientation and the semiconductor structures of the second surface orientation.
14. A method of making a semiconductor device, comprising:
providing a first wafer having a semiconductor layer of a first surface orientation:
selectively etching the semiconductor layer to form semiconductor structures of the first surface orientation and receptor openings;
providing semiconductor structures of a second surface orientation different from the first surface orientation;
locating the semiconductor structures of the second surface orientation into the receptor openings;
forming transistors of a first type in the semiconductor structures of the first surface orientation; and
forming transistors of a second type different from the first type in the semiconductor structures of the second surface orientation
wherein providing the semiconductor structures of the second surface orientation comprises:
providing a plurality of unattached semiconductor structures having, the second surface orientation.
15. The method of claim 14 , wherein:
the receptor openings have a predetermined shape and the plurality of unattached semiconductor structures have generally the same predetermined shape;
the locating semiconductor structures of the second surface orientation comprises:
flowing a liquid containing the plurality of unattached semiconductor structures over the first wafer so that the plurality of unattached semiconductor structures fall into the receptor openings; and
wherein the plurality of unattached semiconductor structures are bonded to the receptor openings.
16. The method of claim 15 , further comprising chemical-mechanical polishing the semiconductor structures of the first surface orientation and the semiconductor structures of the second surface orientation to leave surfaces on the semiconductor structures of the first surface orientation and the semiconductor structures of the second surface orientation that are substantially coplanar.
17. The method of claim 1 wherein:
the forming transistors of a first type in the semiconductor structures of the first surface orientation further includes forming channel regions and current electrode regions of the transistors of the first type in the semiconductor structures of the first surface orientation; and
the forming transistors of a second type in the semiconductor structures of the second surface orientation further includes forming channel regions and current electrode regions of the transistors of the second type in the semiconductor structures of the second surface orientation.
18. A method of making a semiconductor device, comprising:
providing a wafer having a first plurality of semiconductor structures above an insulating layer, wherein the semiconductor structures have a first surface orientation;
applying a second plurality of semiconductor structures having a second surface orientation different from the first surface orientation between the first plurality of semiconductor structures and over the insulating layer; and
forming a substantially planar surface on the wafer, wherein the substantially planar surface comprises the first plurality of semiconductor structures, the second plurality of semiconductor structures, and isolation regions between the first plurality of semiconductor structures and the second plurality of semiconductor structures;
forming transistors of a first type having their channel regions in the first plurality of semiconductor structures; and
forming transistors of a second type different from the first type having their channel regions in the second plurality of semiconductor structures.
19. The method of claim 18 , wherein transistors of the first type are characterized as having a higher carrier mobility when their channel regions are formed in a semiconductor material having the first surface orientation than in the second surface orientation.
20. The method of claim 18 , further comprising:
forming the second plurality of semiconductor structures, wherein the forming the second plurality of semiconductor structures further comprises:
providing a second wafer having a semiconductor layer of the second surface orientation; and
selectively etching the semiconductor layer of the second wafer to form the second plurality of semiconductor structures.
21. The method of claim 1 , further comprising planarizing the semiconductor structures of the first surface orientation and the semiconductor structures of the second surface orientation to leave surfaces on the semiconductor structures of the first surface orientation and the semiconductor structures of the second surface orientation that are substantially coplanar.