Bonded structure with interconnect structure
View Patent ↗A bonded structure is disclosed. The bonded structure can include an interconnect structure that has a first side and a second side opposite the first side. The bonded structure can also include a first die that is mounted to the first side of the interconnect structure. The first die can be directly bonded to the interconnect structure without an intervening adhesive. The bonded structure can also include a second die that is mounted to the first side of the interconnect structure. The bonded structure can further include an element that is mounted to the second side of the interconnect structure. The first die and the second die are electrically connected by way of at least the interconnect structure and the element.
1. A bonded structure comprising:
an interconnect structure having a first side and a second side opposite the first side, the first side comprising a first conductive pad, a second conductive pad, and a non-conductive region, the second side comprising a third conductive pad and a second non-conductive region;
a first die mounted and directly bonded to the first side of the interconnect structure, the first die electrically connected to the first conductive pad of the interconnect structure;
a second die mounted to the first side of the interconnect structure, the second die electrically connected to the second conductive pad of the interconnect structure, the second die spaced apart from the first die laterally along the first side of the interconnect structure; and
an element mounted to the second side of the interconnect structure,
wherein the first die and the second die are electrically connected by way of at least the interconnect structure and the element,
wherein the first die comprises a bonding surface, the bonding surface comprising a first conductive bond pad and a first non-conductive material, the first conductive bond pad directly bonded to the first conductive pad without an intervening adhesive, and the first non-conductive material directly bonded to a first portion of the non-conductive region without an intervening adhesive, and
wherein the element comprises a conductive feature directly bonded to the third conductive pad and a third non-conductive region directly bonded to the second non-conductive region.
2. The bonded structure of claim 1 , wherein the second die comprises a bonding surface, the bonding surface comprising a second conductive bond pad and a second non-conductive material, the second conductive bond pad directly bonded to the second conductive pad without an intervening adhesive, and the second non-conductive material directly bonded to a second portion of the non-conductive region without an intervening adhesive.
3. The bonded structure of claim 1 , wherein the first die is mounted to the first side of the interconnect structure by way of a thermal conductive bonding (TCB).
4. The bonded structure of claim 1 , wherein the interconnect structure comprises a transfer redistribution layer (RDL).
5. The bonded structure of claim 1 , wherein the element is mounted to the second side of the interconnect structure by way of a thermal conductive bonding (TCB).
6. The bonded structure of claim 1 , wherein the element comprises a redistribution layer (RDL) formed on a substrate.
7. The bonded structure of claim 1 , further comprising a first molding material disposed over the interconnect structure at least partially between the first die and the second die.
8. The bonded structure of claim 1 , wherein the first die and the second die are electrically connected through a signal line defined at least partially by portions of the interconnect structure and the element.
9. A bonded structure comprising:
an interconnect structure having a first side and a second side opposite the first side, the first side comprising a first conductive pad, a second conductive pad, and a non-conductive region, and the second side comprising a third conductive pad and a fourth conductive pad;
a first die mounted and directly bonded to the first side of the interconnect structure, the first die electrically connected to the first conductive pad of the interconnect structure;
a second die mounted to the first side of the interconnect structure, the second die electrically connected to the second conductive pad of the interconnect structure, the second die spaced apart from the first die laterally along the first side of the interconnect structure; and
an element mounted and directly hybrid bonded to the second side of the interconnect structure and electrically connected to the third conductive pad and the fourth conductive pad, the element configured to provide at least a portion of a conductive pathway between the first die and the second die.
10. The bonded structure of claim 9 , wherein the third conductive pad is laterally offset relative to the first conductive pad.
11. The bonded structure of claim 9 , wherein the first die comprises a bonding surface, the bonding surface comprising a first conductive bond pad and a first non-conductive material, the first conductive bond pad directly bonded to the first conductive pad without an intervening adhesive, and the first non-conductive material directly bonded to a first portion of the non-conductive region.
12. The bonded structure of claim 11 , wherein the second die comprises a bonding surface, the bonding surface comprising a second conductive bond pad and a second non-conductive material, the second conductive bond pad directly bonded to the second conductive pad without an intervening adhesive, and the second non-conductive material directly bonded to a second portion of the non-conductive region without an intervening adhesive.
13. The bonded structure of claim 9 , wherein the interconnect structure comprises a redistribution layer (RDL).
14. The bonded structure of claim 9 , wherein the element comprises a high density interconnect substrate.
15. The bonded structure of claim 9 , further comprising a second molding material disposed about the element and a conductive via extending at least through a thickness of the second molding material.
16. The bonded structure of claim 9 , wherein the first die and the second die are electrically connected through a signal line defined at least partially by portions of the interconnect structure and the element.
17. A bonded structure comprising:
an interconnect structure having a first side and a second side opposite the first side, the first side being configured to support a plurality of dies, the plurality of dies are directly bonded to the first side, the second side comprising a first conductive pad, a second conductive pad, and a non-conductive region between the first conductive pad and the second conductive pad; and
an element having a bonding surface, the bonding surface comprising a first conductive bond pad, a second conductive bond pad, and a non-conductive material between the first conductive bond pad and the second conductive bond pad, the first conductive bond pad and the second conductive bond pad directly bonded to the first conductive pad and the second conductive pad, respectively, without an intervening adhesive, and the non-conductive material directly bonded to a portion of the non-conductive region,
wherein the element is configured to define at least a portion of a conductive pathway between two or more of the plurality of dies.
18. The bonded structure of claim 17 , wherein the plurality of dies comprises a first die and a second die, the second die being spaced apart from the first die laterally along the first side of the interconnect structure, wherein the first die is electrically coupled with the second die by way of at least the interconnect layer and the element.
19. The bonded structure of claim 18 , further comprising a first molding material disposed over the interconnect structure at least partially between the first die and the second die.
20. The bonded structure of claim 18 , wherein the interconnect structure comprises a redistribution layer (RDL).
21. The bonded structure of claim 17 , wherein the element comprises an integrated device die.
22. The bonded structure of claim 17 , wherein the element comprises a high density interconnect substrate.
23. The bonded structure of claim 18 , wherein the first die and the second die are electrically connected through a signal line defined at least partially by portions of the interconnect structure and the element.