Bonded structure with active interposer
A bonded structure is disclosed. The bonded structure can comprise a first semiconductor element having a first contact pad. An interposer can include a second contact pad on a first side of the interposer and a third contact pad and a fourth contact pad on a second side of the interposer opposite the first side, the second contact pad bonded to the first contact pad; a second semiconductor element having a fifth contact pad bonded to the third contact pad and a sixth contact pad bonded to the fourth contact pad. A switching circuitry can be configured to switch between a first electrical connection between the second and third contact pads and a second electrical connection between the second and fourth contact pads.
1 . A bonded structure comprising:
a first semiconductor element having a first contact pad;
an interposer having a second contact pad on a first side of the interposer and a third contact pad and a fourth contact pad on a second side of the interposer opposite the first side, the second contact pad bonded to the first contact pad;
a second semiconductor element having a fifth contact pad bonded to the third contact pad and a sixth contact pad bonded to the fourth contact pad, wherein the second side of the interposer and the second semiconductor element are hybrid bonded to one another without an intervening adhesive; and
switching circuitry configured to switch between a first electrical connection between the second and third contact pads and a second electrical connection between the second and fourth contact pads.
2 . The bonded structure of claim 1 , wherein the switching circuitry is disposed in the interposer.
3 . The bonded structure of claim 1 , wherein the switching circuitry is disposed in at least one of the first semiconductor element and the second semiconductor element.
4 . The bonded structure of claim 1 , wherein the first semiconductor element comprises a first plurality of contact pads including the first contact pad, and wherein the second semiconductor element comprises a second plurality of contact pads including the fifth and sixth contact pads, the first plurality of contact pads having a first pitch that matches a second pitch of the second plurality of contact pads.
5 . The bonded structure of claim 1 , wherein the first semiconductor element comprises a first plurality of contact pads including the first contact pad, and wherein the second semiconductor element comprises a second plurality of contact pads including the fifth and sixth contact pads, the first plurality of contact pads having a first pitch that is different from a second pitch of the second plurality of contact pads.
6 . The bonded structure of claim 1 , wherein the interposer comprises a third plurality of contact pads on the second side, the third plurality of contact pads including a set of contact pads each connectable to the second contact pad on the first side by way of the switching circuitry, the set of contact pads comprising the third contact pad, the fourth contact pad, and one or more additional contact pads.
7 . The bonded structure of claim 6 , wherein the set of contact pads are disposed within an area no more than 100 μm 2 .
8 . The bonded structure of claim 1 , further comprising testing circuitry configured to determine a bonding offset between the first and second semiconductor elements.
9 . The bonded structure of claim 8 , wherein the testing circuitry is configured to transmit a signal to the switching circuitry indicative of the bonding offset.
10 . The bonded structure of claim 8 , wherein the switching circuitry is programmed to form the first electrical connection or the second electrical connection based at least in part on the determined bonding offset.
11 . The bonded structure of claim 9 , wherein the testing circuitry further comprises a reference pad connected to a probe pad, the signal transmitted to the switching circuitry based at least in part on a determining a continuity of the signal between the probe pad and the reference pad.
12 . The bonded structure of claim 1 , wherein the second contact pad is directly bonded to the first contact pad without an intervening adhesive.
13 . The bonded structure of claim 12 , wherein the first semiconductor element comprises a first nonconductive field region in which the first contact pad is at least partially embedded, wherein the first side of the interposer includes a second nonconductive field region in which the second contact pad is at least partially embedded, the first and second nonconductive field regions directly bonded to one another without an intervening adhesive.
14 . The bonded structure of claim 1 , wherein the switching circuitry comprises a multi-bit switch multiplexer.
15 . The bonded structure of claim 1 , wherein the switching circuitry is configured to switch between electrically connecting the second and fifth contact pads and electrically connecting the second and sixth contact pads.
16 . A bonded structure comprising:
a first semiconductor element;
an interposer having a first plurality of contact pads on a first side of the interposer and a second plurality of contact pads on a second side of the interposer opposite the first side, the first side of the interposer bonded to the first semiconductor element, the first plurality of contact pads electrically connected to the first semiconductor element;
a second semiconductor element bonded to the second side of the interposer, the second plurality of contact pads electrically connected to the second semiconductor element; and
switching circuitry configured to switch electrical connections between each contact pad of the first plurality of contact pads and a set of multiple contact pads of the second plurality of contact pads.
17 . The bonded structure of claim 16 , wherein the switching circuitry is configured to switch electrical connections between each contact pad of the second plurality of contact pads and a second set of multiple contact pads of the first plurality of contact pads.
18 . The bonded structure of claim 16 , wherein the switching circuitry is disposed in the interposer.
19 . The bonded structure of claim 16 , wherein the switching circuitry is disposed in at least one of the first semiconductor element and the second semiconductor element.
20 . The bonded structure of claim 16 , wherein the first semiconductor element includes a third plurality of contact pads directly bonded to the first plurality of contact pads without an intervening adhesive, and wherein the second semiconductor element includes a fourth plurality of contact pads directly bonded to the second plurality of contact pads without and intervening adhesive.
21 . The bonded structure of claim 20 , wherein the switching circuitry is configured to switch electrical connections between each contact pad of the first plurality of contact pads and a set of multiple contact pads of the fourth plurality of contact pads.
22 . The bonded structure of claim 20 , wherein the first semiconductor element includes a first nonconductive field region in which the third plurality of contact pads are at least partially disposed, wherein the first side of the interposer includes a second nonconductive field region in which the first plurality of contact pads are at least partially disposed, and wherein the first and second nonconductive field regions are directly bonded without an adhesive.
23 . The bonded structure of claim 20 , wherein the second side of the interposer includes a third nonconductive field region in which the second plurality of contact pads are at least partially disposed, wherein the second semiconductor element includes a fourth nonconductive field region in which the fourth plurality of contact pads are at least partially disposed, and wherein the third and fourth nonconductive field regions are directly bonded without an adhesive.
24 . A bonded structure comprising:
a first semiconductor element having a circuit element, a first contact pad, and a second contact pad;
a second semiconductor element having a third contact pad bonded to the first contact pad and a fourth contact pad bonded to the second contact pad;
switching circuitry configured to switch between a first electrical connection between the circuit element and the first contact pad and a second electrical connection between the circuit element and the second contact pad; and
testing circuitry configured to determine a bonding offset between the first and second semiconductor elements.
25 . The bonded structure of claim 24 , wherein the third contact pad is directly bonded to the first contact pad without an intervening adhesive, and wherein the fourth contact pad is directly bonded to the second contact pad without an intervening adhesive.
26 . The bonded structure of claim 25 , wherein the first semiconductor element comprises a first nonconductive field region in which the first and second contact pads are at least partially embedded, wherein the second semiconductor element includes a second nonconductive field region in which the third and fourth contact pads are at least partially embedded, the first and second nonconductive field regions directly bonded to one another without an intervening adhesive.
27 . The bonded structure of claim 25 , wherein the testing circuitry is disposed along a dicing lane, the testing circuitry being at least partially destroyed by a dicing step.
28 . The bonded structure of claim 24 , wherein the switching circuitry is programmed to form the first electrical connection or the second electrical connection based at least in part on the determined bonding offset.
29 . The bonded structure of claim 24 , wherein the testing circuitry is configured to transmit a signal to the switching circuitry indicative of the bonding offset.