Testing elements for bonded structures
View Patent ↗A bonded structure for testing a semiconductor device and a method for testing semiconductor devices is disclosed. The bonded structure may comprise a testing element and one or more semiconductor element. The testing element may comprise a testing circuitry. The testing element may be bonded to a semiconductor device or embedded within a semiconductor device. The testing element may be configured to test the semiconductor device. The testing element may be configured to test a first semiconductor device to which it is bonded as well as other semiconductor devices bonded to the first semiconductor device.
1 . A bonded structure comprising;
a first semiconductor element comprising a first active circuitry; and
a testing element comprising a testing circuitry, the testing element directly bonded to the first semiconductor element without an adhesive along a bonding interface;
wherein the testing circuitry is configured to test functionality of at least a portion of the first active circuitry of the first semiconductor element during operation of the bonded structure by transmitting one or more signals to the first active circuitry and receiving a return signal emitted by the tested active circuitry, wherein the one or more signals probe the one or more portions of the first active circuitry; and
wherein the testing circuitry processes the received return signal during operation of the bonded structure to determine whether the tested active circuitry of the first semiconductor element is functional or non-functional.
2 . The bonded structure of claim 1 , wherein the testing element further comprises a memory configured to store a result of the test.
3 . The bonded structure of claim 1 , wherein the testing element is smaller than the first semiconductor element.
4 . The bonded structure of claim 1 , wherein a first nonconductive bonding layer of the first semiconductor element is directly bonded to a second nonconductive bonding layer of the testing element without an intervening adhesive; and
wherein a first contact feature of the first semiconductor element is directly bonded to a second contact feature of the testing element without an intervening adhesive.
5 . The bonded structure of claim 1 , wherein the testing element further comprises a plurality of signal contact pads.
6 . The bonded structure of claim 5 , wherein a majority of the plurality of signal contact pads are configured to test at least the portion of the first active circuitry of the first semiconductor element.
7 . A bonded structure comprising;
a first semiconductor element comprising a testing circuitry; and
a second semiconductor element directly bonded to the first semiconductor element without an adhesive along a bonding interface, the second semiconductor element comprising a first active circuitry;
wherein the testing circuitry is configured to test functionality of at least a portion of the first active circuitry of the second semiconductor element.
8 . The bonded structure of claim 7 , wherein the testing circuitry is further configured to store a result of the functionality of at least the portion of the first active circuitry.
9 . The bonded structure of claim 7 , wherein a first nonconductive bonding layer of the first semiconductor element is directly bonded to a second nonconductive layer of the second semiconductor element without an intervening adhesive; and
wherein a first contact feature of the first semiconductor element is directly bonded to a second contact feature of the second semiconductor element without an intervening adhesive.
10 . The bonded structure of claim 7 , further comprising a third semiconductor element comprising a second active circuitry, the third semiconductor element directly bonded to the second semiconductor element, the testing circuitry configured to test functionality of at least a portion of the second active circuitry.
11 . The bonded structure of claim 10 , further comprising a fourth semiconductor element comprising a third active circuitry, the fourth semiconductor element directly bonded to the third semiconductor element.
12 . The bonded structure of claim 11 , wherein the first semiconductor element further comprises a fourth active circuitry.
13 . The bonded structure of claim 12 , wherein the testing circuitry of the first semiconductor element is configured to test at least a portion of the functionality of the first active circuitry, the second active circuitry, the third active circuitry, and/or the fourth active circuitry.
14 . The bonded structure of claim 7 , further comprising a third semiconductor element comprising a second active circuitry, the third semiconductor element directly bonded to the first semiconductor element, wherein the testing circuitry is configured to test functionality of at least a portion of the second active circuitry.
15 . The bonded structure of claim 7 , wherein the first semiconductor element comprises a testing chip.
16 . The bonded structure of claim 15 , wherein the testing chip is configured to only test the active circuitry of one or more other semiconductor elements and is devoid of other active circuitry.
17 . The bonded structure of claim 16 , further comprising a third semiconductor element comprising a second active circuitry and a second bonding layer bonded to the second semiconductor element without an adhesive, wherein the testing circuitry is configured to test functionality of at least a portion of the second active circuitry.
18 . The bonded structure of claim 17 , further comprising a fourth semiconductor element comprising a third active circuitry and a third bonding layer bonded to the second semiconductor element without an adhesive, wherein the testing circuitry is configured to test functionality of at least a portion of the third active circuitry.
19 . The bonded structure of claim 18 , wherein the testing circuitry is configured to transmit one or more signals to the first active circuitry.
20 . The bonded structure of claim 19 , wherein the one or more signals probe one or more portions of the first active circuitry.
21 . The bonded structure of claim 20 , wherein:
the first active circuitry emits a return signal and the return signal is conveyed from the first active circuitry to the testing circuitry; and
the testing circuitry is configured to analyze the return signal and transmit an indication signal to a first device.
22 . A bonded structure comprising:
a first semiconductor element comprising a first active circuitry;
a first nonconductive bonding layer of the first semiconductor element at least partially defining a direct bonding surface of the bonded structure; and
one or more traces connected to the first active circuitry and extending at least partially into the first nonconductive bonding layer, wherein the one or more traces is configured to provide electrical communication between the first active circuitry and a testing element, the one or more traces terminating at or below the direct bonding surface.
23 . The bonded structure of claim 22 , further comprising a first contact feature at least partially embedded within the first nonconductive bonding layer and connected to the one or more traces, the first contact feature configured to directly bond to a corresponding second contact feature of the testing element.
24 . The bonded structure of claim 22 , further comprising a plurality of contact features at least partially embedded in the first nonconductive bonding layer, wherein the first nonconductive bonding layer and the plurality of contact features cooperate to at least partially define a bonding surface for direct hybrid bonding.
25 . The bonded structure of claim 22 , wherein the one or more traces are not connected to a contact pad at the direct bonding surface of the bonded structure.