IP Library › Granted Patent US 12,512,425
Granted Patent B2
US 12,512,425 · App. 18/305,149 · Granted Dec 30, 2025

Expansion controlled structure for direct bonding and method of forming same

Inventors: Cyprian Emeka Uzoh (San Jose, CA); Oliver Zhao (Sunnyvale, CA); Bongsub Lee (Santa Clara, CA); Laura Wills Mirkarimi (Sunol, CA); Dominik Suwito (San Jose, CA)
Assignee: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.
H01L24/05H01L24/03H01L24/08H01L24/80H01L2224/03452H01L2224/03464H01L2224/03614H01L2224/03845H01L2224/05026H01L2224/05073H01L2224/05109H01L2224/05111H01L2224/05147H01L2224/05155H01L2224/05157H01L2224/05163H01L2224/0517H01L2224/05172H01L2224/0518H01L2224/05184H01L2224/05547H01L2224/05555H01L2224/05557H01L2224/05571H01L2224/05609H01L2224/05611H01L2224/05647H01L2224/05655H01L2224/05657H01L2224/05663H01L2224/05666H01L2224/0567H01L2224/0568H01L2224/05681H01L2224/05684H01L2224/08059H01L2224/08145H01L2224/80895H01L2924/01005H01L2924/0132
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Quick Facts
Patent No.
US 12,512,425
App. No.
18/305,149
Filed
Apr 21, 2023
Granted
Dec 30, 2025
Kind
B2
Art Unit
2818
USPC
257/773
Abstract

An element, a bonded structure including the element, and a method forming the element and the bonded structure are disclosed. The element can include a non-conductive region having a cavity. The element can include a conductive feature formed in the cavity. The conductive feature includes a center portion and an edge portion having first and second coefficients of thermal expansion respectively. The center and edge portions are recessed relative to a contact surface of the non-conductive region by a first depth and a second depth respectively. The first coefficient of thermal expansion can be at least 5% greater than the second coefficient of thermal expansion. The bonded structure can include the element and a second element having a second non-conductive region and a second conductive feature. A conductive interface between the first and second conductive features has a center region and an edge region. In a side cross-section of the bonded structure, there are more voids at or near the edge region than at or near the center region.

Claims (28)

1 . A bonded structure comprising:

a first element having a first non-conductive region and a first conductive feature; and

a second element having a second non-conductive region and a second conductive feature, the second element being bonded to the first element along a bonding interface such that the second non-conductive region is directly bonded to the first non-conductive region along a non-conductive interface and the second conductive feature is directly bonded to the first conductive feature along a conductive interface,

wherein the conductive interface between the first and second conductive features has a center region and an edge region laterally between the center region and the non-conductive interface between the first and second non-conductive regions, wherein in a side cross-section of the bonded structure, there are more voids at or near the edge region than at or near the center region.

2 . The bonded structure of claim 1 , wherein the first non-conductive region has a cavity extending at least partially through a thickness of the first non-conductive region, and the first conductive feature is formed in the cavity, the first conductive feature including a center portion and an edge portion disposed between a sidewall of the cavity and the center portion.

3 . The bonded structure of claim 2 , wherein the center portion has a first coefficient of thermal expansion, the edge portion has a second coefficient of thermal expansion different from the first coefficient of thermal expansion.

4 . The bonded structure of claim 3 , wherein the center portion and the edge portion include the same material with different crystal orientations.

5 . The bonded structure of claim 3 , wherein the center portion and the edge portion include different materials.

6 . The bonded structure of claim 2 , wherein the edge region includes filaments of a material of the edge portion of the first conductive feature.

7 . The bonded structure of claim 2 , wherein the center portion is partially disposed between the edge portion of the first conductive feature and the edge portion of the second conductive feature.

8 . The bonded structure of claim 2 , wherein the second non-conductive region has a second cavity extending at least partially through a thickness of the second non-conductive region, and the second conductive feature is formed in the second cavity, the second conductive feature including a second center portion and a second edge portion disposed between a second sidewall of the second cavity and the second center portion.

9 . The bonded structure of claim 1 , wherein the voids at or near the center region have an average void size greater than an average void size of the voids at or near the edge region.

10 . An element having a bonding surface comprising:

a non-conductive region having a cavity extending at least partially through a thickness of the non-conductive region from a contact surface of the non-conductive region, the contact surface at least partially defining the bonding surface of the element; and

a conductive feature formed in the cavity, the conductive feature including a center portion and an edge portion disposed between a sidewall of the cavity and the center portion, the center portion having a first coefficient of thermal expansion, the edge portion having a second coefficient of thermal expansion different from the first coefficient of thermal expansion, the center portion recessed relative to the contact surface of the non-conductive region by a first depth, the edge portion recessed relative to the contact surface of the non-conductive region by a second depth different from the first depth.

11 . The element of claim 10 , wherein the contact surface has a surface structure prepared for direct bonding.

12 . The element of claim 10 , wherein the first coefficient of thermal expansion is greater than the second coefficient of thermal expansion, and the center portion and the edge portion include the same material with different crystal orientations.

13 . The element of claim 10 , wherein the first coefficient of thermal expansion is greater than the second coefficient of thermal expansion, and the center portion and the edge portion include different materials.

14 . The element of claim 10 , wherein the second depth is greater than the first depth.

15 . The element of claim 10 , further comprising a barrier layer disposed between the edge portion and the sidewall of the cavity, the barrier layer configured to prevent or reduce diffusion of the conductive feature into the non-conductive region.

16 . An element having a bonding surface, the element comprising:

a non-conductive region having a cavity extending at least partially through a thickness of the non-conductive region from a contact surface of the non-conductive region, the contact surface at least partially defining the bonding surface of the element; and

a conductive feature formed in the cavity, the conductive feature including a center portion and an edge portion disposed between a sidewall of the cavity and the center portion, the center portion having a first coefficient of thermal expansion, the edge portion having a second coefficient of thermal expansion different from the first coefficient of thermal expansion, the center portion recessed relative to the contact surface of the non-conductive region by a first depth, the edge portion recessed relative to the contact surface of the non-conductive region by a second depth,

wherein the first coefficient of thermal expansion is at least 5% greater than the second coefficient of thermal expansion.

17 . The element of claim 16 , wherein the contact surface has a surface structure prepared for direct bonding.

18 . The element of claim 16 , wherein the center portion and the edge portion include the same material with different crystal orientations.

19 . The element of claim 16 , wherein the center portion and the edge portion include different materials.

20 . The element of claim 16 , wherein the second depth is greater than the first depth.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 27, 2024
From: UZOH, CYPRIAN EMEKA; ZHAO, OLIVER; LEE, BONGSUB; MIRKARIMI, LAURA WILLS; SUWITO, DOMINIK
To: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.
Reel/Frame 066577/0653 →
Continuity (2)
Provisional Application 63334580 · Apr 25, 2022
Related Publication 20230343734A1 · Oct 26, 2023
References Cited (400)
US 4939568A · Kato et al. · 1990 [cited by applicant]
US 4998665A · Hayashi · 1991 [cited by applicant]
US 5087585A · Hayashi · 1992 [cited by applicant]
US 5236118A · Bower et al. · 1993 [cited by applicant]
US 5322593A · Hasegawa et al. · 1994 [cited by applicant]
US 5413952A · Pages et al. · 1995 [cited by applicant]
US 5442235A · Parrillo et al. · 1995 [cited by applicant]
US 5489804A · Pasch · 1996 [cited by applicant]
US 5501003A · Bernstein · 1996 [cited by applicant]
US 5503704A · Bower et al. · 1996 [cited by applicant]
US 5516727A · Broom · 1996 [cited by applicant]
US 5610431A · Martin · 1997 [cited by applicant]
US 5734199A · Kawakita et al. · 1998 [cited by applicant]
US 5753536A · Sugiyama et al. · 1998 [cited by applicant]
US 5771555A · Eda et al. · 1998 [cited by applicant]
US 5821692A · Rogers et al. · 1998 [cited by applicant]
US 5866942A · Suzuki et al. · 1999 [cited by applicant]
US 5985739A · Plettner et al. · 1999 [cited by applicant]
US 5998808A · Matsushita · 1999 [cited by applicant]
US 6008126A · Leedy · 1999 [cited by applicant]
US 6063968A · Hubner et al. · 2000 [cited by applicant]
US 6071761A · Jacobs · 2000 [cited by applicant]
US 6080640A · Gardner et al. · 2000 [cited by applicant]
US 6097096A · Gardner et al. · 2000 [cited by applicant]
US 6123825A · Uzoh et al. · 2000 [cited by applicant]
US 6147000A · You et al. · 2000 [cited by applicant]
US 6232150B1 · Lin et al. · 2001 [cited by applicant]
US 6258625B1 · Brofman et al. · 2001 [cited by applicant]
US 6259160B1 · Lopatin et al. · 2001 [cited by applicant]
US 6265775B1 · Seyyedy · 2001 [cited by applicant]
US 6297072B1 · Tilmans et al. · 2001 [cited by applicant]
US 6316786B1 · Mueller et al. · 2001 [cited by applicant]
US 6333120B1 · DeHaven et al. · 2001 [cited by applicant]
US 6333206B1 · Ito et al. · 2001 [cited by applicant]
US 6348709B1 · Graettinger et al. · 2002 [cited by applicant]
US 6374770B1 · Lee · 2002 [cited by applicant]
US 6409904B1 · Uzoh et al. · 2002 [cited by applicant]
US 6423640B1 · Lee et al. · 2002 [cited by applicant]
US 6465892B1 · Suga · 2002 [cited by applicant]
US 6528894B1 · Akram et al. · 2003 [cited by applicant]
US 6552436B2 · Burnette et al. · 2003 [cited by applicant]
US 6555917B1 · Heo · 2003 [cited by applicant]
US 6579744B1 · Jiang · 2003 [cited by applicant]
US 6583515B1 · James et al. · 2003 [cited by applicant]
US 6589813B1 · Park · 2003 [cited by applicant]
US 6600224B1 · Farquhar et al. · 2003 [cited by applicant]
US 6624003B1 · Rice · 2003 [cited by applicant]
US 6627814B1 · Stark · 2003 [cited by applicant]
US 6632377B1 · Brusic et al. · 2003 [cited by applicant]
US 6660564B2 · Brady · 2003 [cited by applicant]
US 6667225B2 · Hau-Riege et al. · 2003 [cited by applicant]
US 6828686B2 · Park · 2004 [cited by applicant]
US 6837979B2 · Uzoh et al. · 2005 [cited by applicant]
US 6864585B2 · Enquist · 2005 [cited by applicant]
US 6887769B2 · Kellar et al. · 2005 [cited by applicant]
US 6902987B1 · Tong et al. · 2005 [cited by applicant]
US 6908027B2 · Tolchinsky et al. · 2005 [cited by applicant]
US 6909194B2 · Farnworth et al. · 2005 [cited by applicant]
US 6962835B2 · Tong et al. · 2005 [cited by applicant]
US 6974769B2 · Basol et al. · 2005 [cited by applicant]
US 7045453B2 · Canaperi et al. · 2006 [cited by applicant]
US 7078811B2 · Suga · 2006 [cited by applicant]
US 7105980B2 · Abbott et al. · 2006 [cited by applicant]
US 7109063B2 · Jiang · 2006 [cited by applicant]
US 7126212B2 · Enquist et al. · 2006 [cited by applicant]
US 7193423B1 · Dalton et al. · 2007 [cited by applicant]
US 7354798B2 · Pogge et al. · 2008 [cited by applicant]
US 7485968B2 · Enquist et al. · 2009 [cited by applicant]
US 7750488B2 · Patti et al. · 2010 [cited by applicant]
US 7803693B2 · Trezza · 2010 [cited by applicant]
US 7998335B2 · Feeney et al. · 2011 [cited by applicant]
US 8039966B2 · Yang et al. · 2011 [cited by applicant]
US 8168532B2 · Haneda et al. · 2012 [cited by applicant]
US 8183127B2 · Patti et al. · 2012 [cited by applicant]
US 8241961B2 · Kim et al. · 2012 [cited by applicant]
US 8242600B2 · Yang et al. · 2012 [cited by applicant]
US 8314007B2 · Vaufredaz · 2012 [cited by applicant]
US 8349635B1 · Gan et al. · 2013 [cited by applicant]
US 8377798B2 · Peng et al. · 2013 [cited by applicant]
US 8435421B2 · Keleher et al. · 2013 [cited by applicant]
US 8441131B2 · Ryan · 2013 [cited by applicant]
US 8476146B2 · Chen et al. · 2013 [cited by applicant]
US 8476165B2 · Trickett et al. · 2013 [cited by applicant]
US 8482132B2 · Yang et al. · 2013 [cited by applicant]
US 8501537B2 · Sadaka et al. · 2013 [cited by applicant]
US 8524533B2 · Tong et al. · 2013 [cited by applicant]
US 8620164B2 · Heck et al. · 2013 [cited by applicant]
US 8647987B2 · Yang et al. · 2014 [cited by applicant]
US 8697493B2 · Sadaka · 2014 [cited by applicant]
US 8716105B2 · Sadaka et al. · 2014 [cited by applicant]
US 8802538B1 · Liu · 2014 [cited by applicant]
US 8809123B2 · Liu et al. · 2014 [cited by applicant]
US 8841002B2 · Tong · 2014 [cited by applicant]
US 8988299B2 · Kam et al. · 2015 [cited by applicant]
US 9000600B2 · Uzoh et al. · 2015 [cited by applicant]
US 9093350B2 · Endo et al. · 2015 [cited by applicant]
US 9142517B2 · Liu et al. · 2015 [cited by applicant]
US 9171756B2 · Enquist et al. · 2015 [cited by applicant]
US 9184125B2 · Enquist et al. · 2015 [cited by applicant]
US 9224704B2 · Landru · 2015 [cited by applicant]
US 9230941B2 · Chen et al. · 2016 [cited by applicant]
US 9257399B2 · Kuang et al. · 2016 [cited by applicant]
US 9269612B2 · Chen et al. · 2016 [cited by applicant]
US 9299736B2 · Chen et al. · 2016 [cited by applicant]
US 9312229B2 · Chen et al. · 2016 [cited by applicant]
US 9331149B2 · Tong et al. · 2016 [cited by applicant]
US 9337235B2 · Chen et al. · 2016 [cited by applicant]
US 9343330B2 · Brusic et al. · 2016 [cited by applicant]
US 9349669B2 · Uzoh et al. · 2016 [cited by applicant]
US 9368866B2 · Yu · 2016 [cited by applicant]
US 9385024B2 · Tong et al. · 2016 [cited by applicant]
US 9394161B2 · Cheng et al. · 2016 [cited by applicant]
US 9431368B2 · Enquist et al. · 2016 [cited by applicant]
US 9437572B2 · Chen et al. · 2016 [cited by applicant]
US 9443796B2 · Chou et al. · 2016 [cited by applicant]
US 9461007B2 · Chun et al. · 2016 [cited by applicant]
US 9496239B1 · Edelstein et al. · 2016 [cited by applicant]
US 9536848B2 · England et al. · 2017 [cited by applicant]
US 9559081B1 · Lai et al. · 2017 [cited by applicant]
US 9620481B2 · Edelstein et al. · 2017 [cited by applicant]
US 9633971B2 · Uzoh · 2017 [cited by applicant]
US 9656852B2 · Cheng et al. · 2017 [cited by applicant]
US 9723716B2 · Meinhold · 2017 [cited by applicant]
US 9728521B2 · Tsai et al. · 2017 [cited by applicant]
US 9741620B2 · Uzoh et al. · 2017 [cited by applicant]
US 9799587B2 · Fujii et al. · 2017 [cited by applicant]
US 9852988B2 · Enquist et al. · 2017 [cited by applicant]
US 9881882B2 · Hsu et al. · 2018 [cited by applicant]
US 9893004B2 · Yazdani · 2018 [cited by applicant]
US 9899442B2 · Katkar · 2018 [cited by applicant]
US 9929050B2 · Lin · 2018 [cited by applicant]
US 9941241B2 · Edelstein et al. · 2018 [cited by applicant]
US 9941243B2 · Kim et al. · 2018 [cited by applicant]
US 9953941B2 · Enquist · 2018 [cited by applicant]
US 9960142B2 · Chen et al. · 2018 [cited by applicant]
US 10002844B1 · Wang et al. · 2018 [cited by applicant]
US 10026605B2 · Doub et al. · 2018 [cited by applicant]
US 10075657B2 · Fahim et al. · 2018 [cited by applicant]
US 10147641B2 · Enquist et al. · 2018 [cited by applicant]
US 10204893B2 · Uzoh et al. · 2019 [cited by applicant]
US 10269708B2 · Enquist et al. · 2019 [cited by applicant]
US 10269756B2 · Uzoh · 2019 [cited by applicant]
US 10276619B2 · Kao et al. · 2019 [cited by applicant]
US 10276909B2 · Huang et al. · 2019 [cited by applicant]
US 10418277B2 · Cheng et al. · 2019 [cited by applicant]
US 10434749B2 · Tong et al. · 2019 [cited by applicant]
US 10446456B2 · Shen et al. · 2019 [cited by applicant]
US 10446487B2 · Huang et al. · 2019 [cited by applicant]
US 10446532B2 · Uzoh et al. · 2019 [cited by applicant]
US 10508030B2 · Katkar et al. · 2019 [cited by applicant]
US 10515913B2 · Katkar et al. · 2019 [cited by applicant]
US 10522499B2 · Enquist et al. · 2019 [cited by applicant]
US 10707087B2 · Uzoh et al. · 2020 [cited by applicant]
US 10784191B2 · Huang et al. · 2020 [cited by applicant]
US 10790262B2 · Uzoh et al. · 2020 [cited by applicant]
US 10840135B2 · Uzoh · 2020 [cited by applicant]
US 10840205B2 · Fountain, Jr. et al. · 2020 [cited by applicant]
US 10854578B2 · Morein · 2020 [cited by applicant]
US 10879212B2 · Uzoh et al. · 2020 [cited by applicant]
US 10886177B2 · DeLaCruz et al. · 2021 [cited by applicant]
US 10892246B2 · Uzoh · 2021 [cited by applicant]
US 10923408B2 · Huang et al. · 2021 [cited by applicant]
US 10923413B2 · DeLaCruz · 2021 [cited by applicant]
US 10950547B2 · Mohammed et al. · 2021 [cited by applicant]
US 10964664B2 · Mandalapu et al. · 2021 [cited by applicant]
US 10985133B2 · Uzoh · 2021 [cited by applicant]
US 10991804B2 · DeLaCruz et al. · 2021 [cited by applicant]
US 10998292B2 · Lee et al. · 2021 [cited by applicant]
US 11004757B2 · Katkar et al. · 2021 [cited by applicant]
US 11011494B2 · Gao et al. · 2021 [cited by applicant]
US 11011503B2 · Wang et al. · 2021 [cited by applicant]
US 11031285B2 · Katkar et al. · 2021 [cited by applicant]
US 11056348B2 · Theil · 2021 [cited by applicant]
US 11088099B2 · Katkar et al. · 2021 [cited by applicant]
US 11127738B2 · DeLaCruz et al. · 2021 [cited by applicant]
US 11158606B2 · Gao et al. · 2021 [cited by applicant]
US 11171117B2 · Gao et al. · 2021 [cited by applicant]
US 11176450B2 · Teig et al. · 2021 [cited by applicant]
US 11244920B2 · Uzoh · 2022 [cited by applicant]
US 11256004B2 · Haba et al. · 2022 [cited by applicant]
US 11264357B1 · DeLaCruz et al. · 2022 [cited by applicant]
US 11276676B2 · Enquist et al. · 2022 [cited by applicant]
US 11329034B2 · Tao et al. · 2022 [cited by applicant]
US 11348898B2 · DeLaCruz et al. · 2022 [cited by applicant]
US 11355443B2 · Huang et al. · 2022 [cited by applicant]
US 11735523B2 · Uzoh · 2023 [cited by applicant]
US 20020000328A1 · Motomura et al. · 2002 [cited by applicant]
US 20020003307A1 · Suga · 2002 [cited by applicant]
US 20020025665A1 · Juengling · 2002 [cited by applicant]
US 20020074670A1 · Suga · 2002 [cited by applicant]
US 20020094661A1 · Enquist et al. · 2002 [cited by applicant]
US 20030092220A1 · Akram · 2003 [cited by applicant]
US 20030157748A1 · Kim et al. · 2003 [cited by applicant]
US 20040084414A1 · Sakai et al. · 2004 [cited by applicant]
US 20060024950A1 · Choi et al. · 2006 [cited by applicant]
US 20060057945A1 · Hsu et al. · 2006 [cited by applicant]
US 20070096294A1 · Ikeda et al. · 2007 [cited by applicant]
US 20070111386A1 · Kim et al. · 2007 [cited by applicant]
US 20080122092A1 · Hong · 2008 [cited by applicant]
US 20080237053A1 · Andricacos et al. · 2008 [cited by applicant]
US 20090197408A1 · Lehr et al. · 2009 [cited by applicant]
US 20090200668A1 · Yang et al. · 2009 [cited by applicant]
US 20100255262A1 · Chen et al. · 2010 [cited by applicant]
US 20100327443A1 · Kim · 2010 [cited by applicant]
US 20110074040A1 · Frank et al. · 2011 [cited by applicant]
US 20110084403A1 · Yang et al. · 2011 [cited by applicant]
US 20120211894A1 · Aoyagi · 2012 [cited by applicant]
US 20120212384A1 · Kam et al. · 2012 [cited by applicant]
US 20130020704A1 · Sadaka · 2013 [cited by applicant]
US 20130221527A1 · Yang et al. · 2013 [cited by applicant]
US 20130252399A1 · Leduc · 2013 [cited by applicant]
US 20140153210A1 · Uzoh · 2014 [cited by applicant]
US 20140175655A1 · Chen et al. · 2014 [cited by applicant]
US 20140225795A1 · Yu · 2014 [cited by applicant]
US 20140252635A1 · Tran et al. · 2014 [cited by applicant]
US 20140264948A1 · Chou et al. · 2014 [cited by applicant]
US 20140353828A1 · Edelstein et al. · 2014 [cited by applicant]
US 20150064498A1 · Tong · 2015 [cited by applicant]
US 20150108644A1 · Kuang et al. · 2015 [cited by applicant]
US 20150206823A1 · Lin et al. · 2015 [cited by applicant]
US 20150340269A1 · Rivoire et al. · 2015 [cited by applicant]
US 20150380368A1 · Momose et al. · 2015 [cited by applicant]
US 20160020183A1 · Chuang et al. · 2016 [cited by applicant]
US 20160133598A1 · Baudin et al. · 2016 [cited by applicant]
US 20160190103A1 · Kabe et al. · 2016 [cited by applicant]
US 20160276383A1 · Chuang et al. · 2016 [cited by applicant]
US 20160343682A1 · Kawasaki · 2016 [cited by applicant]
US 20170047307A1 · Uzoh · 2017 [cited by applicant]
US 20170069575A1 · Haba et al. · 2017 [cited by applicant]
US 20170098627A1 · Das et al. · 2017 [cited by applicant]
US 20170194271A1 · Hsu et al. · 2017 [cited by applicant]
US 20170355040A1 · Utsumi et al. · 2017 [cited by applicant]
US 20180151523A1 · Chen et al. · 2018 [cited by applicant]
US 20180175012A1 · Wu et al. · 2018 [cited by applicant]
US 20180182639A1 · Uzoh et al. · 2018 [cited by applicant]
US 20180182665A1 · Uzoh et al. · 2018 [cited by applicant]
US 20180182666A1 · Uzoh et al. · 2018 [cited by applicant]
US 20180190580A1 · Haba et al. · 2018 [cited by applicant]
US 20180190583A1 · DeLaCruz et al. · 2018 [cited by applicant]
US 20180219038A1 · Gambino et al. · 2018 [cited by applicant]
US 20180273377A1 · Katkar et al. · 2018 [cited by applicant]
US 20180295718A1 · Uzoh et al. · 2018 [cited by applicant]
US 20180323177A1 · Yu et al. · 2018 [cited by applicant]
US 20180323227A1 · Zhang et al. · 2018 [cited by applicant]
US 20180331066A1 · Uzoh et al. · 2018 [cited by applicant]
US 20190096741A1 · Uzoh et al. · 2019 [cited by applicant]
US 20190115277A1 · Yu et al. · 2019 [cited by applicant]
US 20190131277A1 · Yang et al. · 2019 [cited by applicant]
US 20190198407A1 · Huang et al. · 2019 [cited by applicant]
US 20190198409A1 · Katkar et al. · 2019 [cited by applicant]
US 20190265411A1 · Huang et al. · 2019 [cited by applicant]
US 20190333550A1 · Fisch · 2019 [cited by applicant]
US 20190348336A1 · Katkar et al. · 2019 [cited by applicant]
US 20190385935A1 · Gao et al. · 2019 [cited by applicant]
US 20190385966A1 · Gao et al. · 2019 [cited by applicant]
US 20190385982A1 · Lee et al. · 2019 [cited by applicant]
US 20190393086A1 · Uzoh · 2019 [cited by applicant]
US 20200006280A1 · Shah et al. · 2020 [cited by applicant]
US 20200013637A1 · Haba · 2020 [cited by applicant]
US 20200013765A1 · Fountain, Jr. et al. · 2020 [cited by applicant]
US 20200035641A1 · Fountain, Jr. et al. · 2020 [cited by applicant]
US 20200075520A1 · Gao et al. · 2020 [cited by applicant]
US 20200075553A1 · DeLaCruz et al. · 2020 [cited by applicant]
US 20200126906A1 · Uzoh et al. · 2020 [cited by applicant]
US 20200194396A1 · Uzoh · 2020 [cited by examiner]
US 20200227367A1 · Haba et al. · 2020 [cited by applicant]
US 20200243380A1 · Uzoh et al. · 2020 [cited by applicant]
US 20200279821A1 · Haba et al. · 2020 [cited by applicant]
US 20200294908A1 · Haba et al. · 2020 [cited by applicant]
US 20200328162A1 · Haba et al. · 2020 [cited by applicant]
US 20200328164A1 · DeLaCruz et al. · 2020 [cited by applicant]
US 20200328165A1 · DeLaCruz et al. · 2020 [cited by applicant]
US 20200335408A1 · Gao et al. · 2020 [cited by applicant]
US 20200365575A1 · Uzoh et al. · 2020 [cited by applicant]
US 20200371154A1 · DeLaCruz et al. · 2020 [cited by applicant]
US 20200381389A1 · Uzoh et al. · 2020 [cited by applicant]
US 20200395321A1 · Katkar et al. · 2020 [cited by applicant]
US 20200411483A1 · Uzoh et al. · 2020 [cited by applicant]
US 20210043557A1 · Lee et al. · 2021 [cited by applicant]
US 20210098411A1 · Liff et al. · 2021 [cited by applicant]
US 20210098412A1 · Haba et al. · 2021 [cited by applicant]
US 20210118864A1 · DeLaCruz et al. · 2021 [cited by applicant]
US 20210143125A1 · DeLaCruz et al. · 2021 [cited by applicant]
US 20210181510A1 · Katkar et al. · 2021 [cited by applicant]
US 20210193603A1 · Katkar et al. · 2021 [cited by applicant]
US 20210193624A1 · DeLaCruz et al. · 2021 [cited by applicant]
US 20210193625A1 · DeLaCruz et al. · 2021 [cited by applicant]
US 20210242152A1 · Fountain, Jr. et al. · 2021 [cited by applicant]
US 20210257341A1 · Lee · 2021 [cited by examiner]
US 20210287981A1 · Shih · 2021 [cited by applicant]
US 20210296282A1 · Gao et al. · 2021 [cited by applicant]
US 20210305202A1 · Uzoh et al. · 2021 [cited by applicant]
US 20210335737A1 · Katkar et al. · 2021 [cited by applicant]
US 20210366820A1 · Uzoh · 2021 [cited by applicant]
US 20210407941A1 · Haba · 2021 [cited by applicant]
US 20220005784A1 · Gao · 2022 [cited by examiner]
US 20220077063A1 · Haba · 2022 [cited by applicant]
US 20220077087A1 · Haba · 2022 [cited by applicant]
US 20220130787A1 · Uzoh · 2022 [cited by applicant]
US 20220139867A1 · Uzoh · 2022 [cited by applicant]
US 20220139869A1 · Gao et al. · 2022 [cited by applicant]
US 20220165692A1 · Uzoh et al. · 2022 [cited by applicant]
US 20220208650A1 · Gao et al. · 2022 [cited by applicant]
US 20220208702A1 · Uzoh · 2022 [cited by applicant]
US 20220208723A1 · Katkar et al. · 2022 [cited by applicant]
US 20220246497A1 · Fountain, Jr. et al. · 2022 [cited by applicant]
US 20220285213A1 · Uzoh et al. · 2022 [cited by applicant]
US 20220285303A1 · Mirkarimi et al. · 2022 [cited by applicant]
US 20220302058A1 · Gao et al. · 2022 [cited by applicant]
US 20220319901A1 · Suwito et al. · 2022 [cited by applicant]
US 20220320035A1 · Uzoh et al. · 2022 [cited by applicant]
US 20220320036A1 · Gao et al. · 2022 [cited by applicant]
US 20230005850A1 · Fountain, Jr. · 2023 [cited by applicant]
US 20230019869A1 · Mirkarimi et al. · 2023 [cited by applicant]
US 20230036441A1 · Haba et al. · 2023 [cited by applicant]
US 20230067677A1 · Lee et al. · 2023 [cited by applicant]
US 20230069183A1 · Haba · 2023 [cited by applicant]
US 20230100032A1 · Haba et al. · 2023 [cited by applicant]
US 20230115122A1 · Uzoh et al. · 2023 [cited by applicant]
US 20230122531A1 · Uzoh · 2023 [cited by applicant]
US 20230123423A1 · Gao et al. · 2023 [cited by applicant]
US 20230125395A1 · Gao et al. · 2023 [cited by applicant]
US 20230130259A1 · Haba et al. · 2023 [cited by applicant]
US 20230132632A1 · Katkar et al. · 2023 [cited by applicant]
US 20230140107A1 · Uzoh et al. · 2023 [cited by applicant]
US 20230142680A1 · Guevara et al. · 2023 [cited by applicant]
US 20230154816A1 · Haba et al. · 2023 [cited by applicant]
US 20230154828A1 · Haba et al. · 2023 [cited by applicant]
US 20230187264A1 · Uzoh et al. · 2023 [cited by applicant]
US 20230187317A1 · Uzoh · 2023 [cited by applicant]
US 20230187412A1 · Gao et al. · 2023 [cited by applicant]
US 20230197453A1 · Fountain, Jr. et al. · 2023 [cited by applicant]
US 20230197496A1 · Theil · 2023 [cited by applicant]
US 20230197559A1 · Haba et al. · 2023 [cited by applicant]
US 20230197560A1 · Katkar et al. · 2023 [cited by applicant]
US 20230197655A1 · Theil et al. · 2023 [cited by applicant]
US 20230207402A1 · Fountain, Jr. et al. · 2023 [cited by applicant]
US 20230207437A1 · Haba · 2023 [cited by applicant]
US 20230207474A1 · Uzoh et al. · 2023 [cited by applicant]
US 20230207514A1 · Gao et al. · 2023 [cited by applicant]
US 20230215836A1 · Haba et al. · 2023 [cited by applicant]
US 20230245950A1 · Haba et al. · 2023 [cited by applicant]
US 20230268300A1 · Uzoh et al. · 2023 [cited by applicant]
US 20230299029A1 · Theil et al. · 2023 [cited by applicant]
US 20230360950A1 · Gao · 2023 [cited by applicant]
US 20230361074A1 · Uzoh et al. · 2023 [cited by applicant]
US 20230369136A1 · Uzoh et al. · 2023 [cited by applicant]
US 20230375613A1 · Haba et al. · 2023 [cited by applicant]
US 20230380145A1 · Chen et al. · 2023 [cited by applicant]
US 20240006383A1 · Lee et al. · 2024 [cited by applicant]
US 20240038702A1 · Uzoh · 2024 [cited by applicant]
CN 1935630A · 2007 [cited by applicant]
CN 110010546A · 2019 [cited by applicant]
CN 111095532A · 2020 [cited by applicant]
CN 217469903U · 2022 [cited by applicant]
JP 2002353416A · 2002 [cited by applicant]
JP 2013033786A · 2013 [cited by applicant]
JP 2018129475 · 2018 [cited by applicant]
JP 2018160519 · 2018 [cited by applicant]
KR 1020160066272 · 2016 [cited by applicant]
TW 202343661A · 2023 [cited by applicant]
WO WO2005043584A2 · 2005 [cited by applicant]
WO WO2019070571A1 · 2019 [cited by applicant]
WO WO2019241417A1 · 2019 [cited by applicant]
WO WO2019241561A1 · 2019 [cited by applicant]
WO WO2019241571A1 · 2019 [cited by applicant]
WO WO2021236361A1 · 2021 [cited by applicant]
Akolkar, R., “Current status and advances in Damascene Electrodeposition,” Encyclopedia of Interfacial Chemistry: Surface Science and Electrochemistry, 2017, 8 pages. [cited by applicant]
Bush, Steve, “Electronica: Automotive power modules from On Semi,” ElectronicsWeekly.com, indicating an ONSEMI AR0820 product was to be demonstrated at a Nov. 2018 trade show, https://www.electronicsweekly.com/news/prod… [cited by applicant]
Che, F.X. et al., “Study on Cu protrusion of through-silicon via,” IEEE Transactions on Components, Packaging and Manufacturing Technology, May 2013, vol. 3, No. 5, pp. 732-739. [cited by applicant]
Dela Pena, Eden M. et al., “Electrodeposited copper using direct and pulse currents from electrolytes containing low concentration of additives,” School of Chemical and Process Engineering, University of Strathclyde, 20… [cited by applicant]
De Messemaeker, Joke et al., “Correlation between Cu microstructure and TSV Cu pumping,” 2014 Electronic Components & Technology Conference, pp. 613-619. [cited by applicant]
Di Cioccio, L. et al., “An overview of patterned metal/dielectric surface bonding: Mechanism, alignment and characterization,” Journal of the Electrochemical Society, 2011, vol. 158, No. 6, pp. P81-P86. [cited by applicant]
Ganesan, Kousik, “Capable copper electrodeposition process for integrated circuit—substrate packaging manufacturing,” A dissertation presented in partial fulfillment of the requirements for the degree Doctor of Philosop… [cited by applicant]
Gondcharton, P. et al., “Kinetics of low temperature direct copper-copper bonding,” Microsyst Technol, 2015, vol. 21, pp. 995-1001. [cited by applicant]
Heryanto, A. et al., “Effect of copper TSV annealing on via protrusion for TSV wafer fabrication,” Journal of Electronic Materials, 2012, vol. 41, No. 9, pp. 2533-2542. [cited by applicant]
Hobbs, Anthony et al., “Evolution of grain and micro-void structure in electroplated copper interconnects,” Materials Transactions, 2002, vol. 43, No. 7, pp. 1629-1632. [cited by applicant]
Huang, Q., “Effects of impurity elements on isothermal grain growth of electroplated copper,” Journal of the Electrochemical Society, 2018, vol. 165, No. 7, pp. D251-D257. [cited by applicant]
Huang, Q., “Impurities in the electroplated sub-50 nm Cu lines: The effects of the plating additives,” Journal of the Electrochemical Society, 2014, vol. 161, No. 9, pp. D388-D394. [cited by applicant]
International Search Report and Written Opinion for PCT/US2023/019460, dated Aug. 16, 2023, 9 pages. [cited by applicant]
Jiang, T. et al., “Plasticity mechanism for copper extrusion in through-silicon vias for three-dimensional interconnects,” Applied Physics Letters, 2013, vol. 103, pp. 211906-1-211906-5. [cited by applicant]
Juang, Jing-Ye et al., “Copper-to-copper direct bonding on highly (111)-oriented nanotwinned copper in no-vacuum ambient,” Scientific Reports, Sep. 17, 2018, vol. 8, 11 pages. [cited by applicant]
Ker, Ming-Dou et al., “Fully process-compatible layout design on bond pad to improve wire bond reliability in CMOS ICs,” IEEE Transactions on Components and Packaging Technologies, Jun. 2002, vol. 25, No. 2, pp. 309-316. [cited by applicant]
Kim, Myung Jun et al., “Characteristics of pulse-reverse electrodeposited Cu thin film,” I. Effects of Anodic Step in the Absence of an Organic Additives, Journal of the Electrochemical Society, 2012, vol. 159, No. 9, p… [cited by applicant]
Kim, Myung Jun et al., “Characteristics of pulse-reverse electrodeposited Cu thin film,” II. Effects of Organic Additives, Journal of the Electrochemical Society, 2012, vol. 159, No. 9, pp. D544-D548. [cited by applicant]
Liu, C. et al., “Low-temperature direct copper-to-copper bonding enabled by creep on (111) surfaces of nanotwinned Cu,” Scientific Reports, May 12, 2015, 5:09734, pp. 1-11. [cited by applicant]
Liu, Chien-Min et al., “Effect of grain orientations of Cu seed layers on the growth of <111>-oriented nanotwinned Cu,” Scientific Reports, 2014, vol. 4, No. 6123, 4 pages. [cited by applicant]
Liu, Zi-Yu et al. “Detection and formation mechanism of micro-defects in ultrafine pitch Cu—Cu direct bonding,” Chin. Phys. B, 2016, vol. 25, No. 1, pp. 018103-1-018103-7. [cited by applicant]
Lu, L. et al., “Grain growth and strain release in nanocrystalline copper,” Journal of Applied Physics, vol. 89, Issue 11, pp. 6408. [cited by applicant]
Mendez, Julie Marie, “Characterization of copper electroplating and electropolishing processes for semiconductor interconnect metallization,” Submitted in partial fulfillment of the requirements for the degree of Doctor… [cited by applicant]
Menk, L.A. et al., “Galvanostatic plating with a single additive electrolyte for bottom-up filling of copper in Mesoscale TSVs,” Microsystems and Engineering Sciences Applications (MESA) Complex, Sandia National Laborat… [cited by applicant]
Moriceau, H. et al., “Overview of recent direct wafer bonding advances and applications,” Advances in Natural Sciences—Nanoscience and Nanotechnology, 2010, 11 pages. [cited by applicant]
Morrison, Jim et al., “Samsung Galaxy S7 Edge Teardown,” Tech Insights (posted Apr. 24, 2016), includes description of hybrid bonded Sony IMX260 dual-pixel sensor, https://www.techinsights.com/blog/samsung-galaxy-s7-edg… [cited by applicant]
Mott, D. et al., “Synthesis of size-controlled and shaped copper nanoparticles,” Langmuir, 2007, vol. 23, No. 10, pp. 5740-5745. [cited by applicant]
Nakanishi, H. et al., “Studies on SiO2—SiO2 bonding with hydrofluoric acid. Room temperature and low stress bonding technique for MEMS,” Sensors and Actuators, 2000, vol. 79, pp. 237-244. [cited by applicant]
Oberhammer, J. et al., “Sealing of adhesive bonded devices on wafer level,” Sensors and Actuators A, 2004, vol. 110, No. 1-3, pp. 407-412, see pp. 407-412, and Figures 1(a)-1(I), 6 pages. [cited by applicant]
ONSEMI AR0820 image, cross section of a CMOS image sensor product. The part in the image was shipped on Sep. 16, 2021. Applicant makes no representation that the part in the image isidentical to the part identified in t… [cited by applicant]
Ortleb, Thomas et al., “Controlling macro and micro surface topography for a 45nm copper CMP process using a high resolution profiler,” Proc. of SPIE, 2008, vol. 6922, 11 pages. [cited by applicant]
Parthasaradhy, N.V., “Practical Electroplating Handbook,” 1989, Prentice-Hall, Inc., pp. 54-56. [cited by applicant]
Plobi, A. et al., “Wafer direct bonding: tailoring adhesion between brittle materials,” Materials Science and Engineering Review Journal, 1999, R25, 88 pages. [cited by applicant]