Method of planarizing recesses filled with copper
A structure includes a substrate having an upper surface provided with recesses and coated with a continuous barrier layer topped with a continuous copper layer filling at least the recesses. The structure is planarized by: a) chemical-mechanical polishing of the copper, such a polishing being selective with respect to the barrier layer so that copper remains in the recesses and is set back with respect to the upper surface of the substrate; b) depositing on the exposed surface of the structure a material covering at least the copper at the level of the recesses; and c) chemical-mechanical planarizing of the structure to expose the substrate with the copper remaining buried under the material. Two such structures are then direct bonded to each other with opposite areas of material having a same topology.
1. A method, comprising:
forming a first structure and a second structure, wherein forming each of the first and second structures comprises:
providing recesses in an upper surface of a substrate;
coating the substrate with a continuous barrier layer;
topping the continuous barrier layer with a continuous copper layer filling at least the recesses;
chemical-mechanical polishing the copper layer in a manner that is selective with respect to the continuous barrier layer so that copper remains in the recesses and is set back with respect to the upper surface of the substrate;
depositing a material covering at least the copper at the level of the recesses; and
chemical-mechanical polishing the structure so as to remove said material and expose the copper; and
face-to-face assembling of the first structure to the second structure by direct bonding the exposed copper of the first structure to the exposed copper of the second structure, wherein opposite areas of the material on the first and second structures have a same topology.
2. The method of claim 1 , wherein said material is selected from the group consisting of: titanium, titanium nitride, tantalum, tantalum nitride, molybdenum, chromium, ruthenium, tungsten, or a dielectric such as silicon oxide or nitride with carbon and/or porous compounds.
3. The method of claim 1 , wherein the barrier layer is made of a material selected from the group consisting of: titanium, tantalum, titanium nitride and tantalum nitride, chromium, ruthenium, cobalt, and molybdenum.
4. The method of claim 1 , wherein said material is selected from the group consisting of: titanium, titanium nitride, tantalum, tantalum nitride, chromium, ruthenium, molybdenum, and tungsten.
5. The method of claim 1 , wherein the substrate is an insulating layer.
6. The method of claim 5 , wherein said insulating layer is a silicon oxide layer.