Method and structures for low temperature device bonding
View Patent ↗Dies and/or wafers including conductive features at the bonding surfaces are stacked and direct hybrid bonded at a reduced temperature. The surface mobility and diffusion rates of the materials of the conductive features are manipulated by adjusting one or more of the metallographic texture or orientation at the surface of the conductive features and the concentration of impurities within the materials.
1. A microelectronic assembly, comprising:
a first substrate having a bonding surface, the bonding surface of the first substrate having a planarized topography;
one or more first conductive features embedded in the first substrate and disposed at the bonding surface of the first substrate, the one or more first conductive features comprising a first conductive material having a first concentration of impurities;
a second substrate having a bonding surface directly bonded to the bonding surface of the first substrate without an adhesive, the bonding surface of the second substrate having a planarized topography; and
one or more second conductive features embedded in the second substrate and disposed at the bonding surface of the second substrate, the one or more second conductive features comprising a second conductive material having a second concentration of impurities greater than the first concentration of impurities, the one or more second conductive features diffusion bonded to the one or more first conductive features.
2. The microelectronic assembly of claim 1 , wherein impurities of the second conductive material are diffused into at least a portion of the first conductive material.
3. The microelectronic assembly of claim 1 , further comprising impurity gradients at a bonding interface between the one or more second conductive features and the one or more first conductive features.
4. The microelectronic assembly of claim 1 , wherein the one or more first conductive features have a first surface texture defined by a first orientation of grains at a bonding surface of the one or more first conductive features and the one or more second conductive features have a second, different surface texture defined by a second, different orientation of grains at a bonding surface of the one or more second conductive features.
5. The microelectronic assembly of claim 1 , wherein the impurities of the one or more second conductive features comprise one or more materials that influence surface mobility of atoms of the second conductive material.
6. The microelectronic assembly of claim 5 , wherein the one or more materials are configured to increase surface mobility of the atoms of the second conductive material.
7. The microelectronic assembly of claim 1 , wherein the impurities of the one or more second conductive features are configured to alter thermomechanical properties of the second conductive material.
8. The microelectronic assembly of claim 1 , wherein the impurities of the one or more first conductive features and/or the one or more second conductive features comprise one or more of: carbon, oxygen, nitrogen, and sulfur.
9. The microelectronic assembly of claim 1 , wherein a conductive feature of the one or more first conductive features comprises a first portion and a second portion, the first portion disposed between the second portion and the first substrate, the first portion and the second portion having different concentrations of impurities.
10. The microelectronic assembly of claim 1 , wherein the second concentration of impurities is less than 100 parts per million (ppm).
11. The microelectronic assembly of claim 10 , wherein the second concentration of impurities is less than 50 parts per million (ppm).
12. The microelectronic assembly of claim 1 , wherein the first concentration of impurities is less than 10 parts per million (ppm).
13. The microelectronic assembly of claim 12 , wherein the first concentration of impurities is less than 5 parts per million (ppm).
14. A microelectronic assembly, comprising:
a first substrate having a bonding surface, the bonding surface of the first substrate having a planarized topography;
one or more first conductive interconnect structures embedded in the first substrate and disposed at a first surface at the bonding surface of the first substrate, the first surface of the one or more first conductive interconnect structures having a surface texture defined by a grain orientation at the first surface;
a second substrate having a bonding surface directly bonded to the bonding surface of the first substrate without an adhesive, the bonding surface of the second substrate having a planarized topography; and
one or more second conductive interconnect structures embedded in the second substrate and disposed at a second surface at the bonding surface of the second substrate, the one or more second conductive interconnect structures bonded to the one or more first conductive interconnect structures, wherein the one or more first conductive interconnect structures comprise a conductive material having a first concentration of impurities and the one or more second conductive interconnect structures comprise a conductive material having a second concentration of impurities that is higher than the first concentration of impurities in the first conductive interconnect.
15. The microelectronic assembly of claim 14 , wherein the surface texture is a first surface texture that comprises a {111} grain orientation that includes more than 97% of {111} oriented grains, and the second surface has a second surface texture that comprises fewer {111} oriented grains than the first surface texture.
16. The microelectronic assembly of claim 15 , wherein the second surface has a second surface texture that comprises a combination of grain orientations including two or more of {111}, {110}, {200}, {222}, and {311}.
17. The microelectronic assembly of claim 15 , wherein the second surface has a second surface texture that comprises randomly arranged grain orientations, the grain orientations comprise {111}, {110}, {200}, {222}, and {311}.
18. The microelectronic assembly of claim 14 , further comprising impurity gradients indicative of a process in which impurities of the second conductive material are diffused into at least a portion of the first conductive material.
19. The microelectronic assembly of claim 14 , wherein the one or more first conductive features have a first surface texture defined by a first orientation of grains at a bonding surface of the one or more first conductive features and the one or more second conductive features have a second, different surface texture defined by a second, different orientation of grains at a bonding surface of the one or more second conductive features.
20. The microelectronic assembly of claim 14 , wherein the impurities of the one or more first conductive features and/or the one or more second conductive features comprise one or more of: carbon, oxygen, nitrogen, and sulfur.
21. The microelectronic assembly of claim 14 , wherein a first conductive feature of the one or more first conductive features comprises a first conductive portion and a second portion, the first portion disposed between the second portion and the first substrate, the first portion and the second portion having different concentrations of impurities.
22. The microelectronic assembly of claim 14 , wherein the impurities of the one or more second conductive features comprise one or more materials that influence surface mobility of atoms of the conductive material of the one or more second conductive interconnect structures.
23. The microelectronic assembly of claim 14 , wherein the impurities of the one or more second conductive features alter thermomechanical properties of the conductive material of the one or more second conductive interconnect structures.
24. The microelectronic assembly of claim 14 , wherein the second concentration of impurities is less than 100 parts per million (ppm) of one or more of: carbon, oxygen, nitrogen, and sulfur.
25. The microelectronic assembly of claim 24 , wherein the second concentration of impurities is less than 50 parts per million (ppm).
26. The microelectronic assembly of claim 14 , wherein the first concentration of impurities is less than 10 parts per million (ppm) of one or more of: carbon, oxygen, nitrogen, and sulfur.
27. The microelectronic assembly of claim 26 , wherein the first concentration of impurities is less than 5 parts per million (ppm).
28. The microelectronic assembly of claim 14 , wherein the one or more first conductive features and the one or more second conductive features are diffusion bonded to each other.