Die processing
Representative implementations provide techniques and systems for processing integrated circuit (IC) dies. Dies being prepared for intimate surface bonding (to other dies, to substrates, to another surface, etc.) may be processed with a minimum of handling, to prevent contamination of the surfaces or the edges of the dies. The techniques include processing dies while the dies are on a dicing sheet or other device processing film or surface. Systems include integrated cleaning components arranged to perform multiple cleaning processes simultaneously.
1. A method of forming a microelectronic assembly, comprising:
providing a protective layer on one or both surfaces of a substrate;
fixing the substrate onto a carrier;
singulating the substrate into a quantity of dies fixed to the carrier;
processing at least a first surface of the dies while the dies are fixed to the carrier;
cutting the carrier around a perimeter of a first die, the cutting forming a portion of the carrier fixed to a second surface of the first die;
removing the first die from the quantity of dies while the portion of the carrier is fixed to the second surface of the first die; and
attaching the first die to a prepared surface of a substrate, the first surface of the first die being attached to the prepared surface of the substrate.
2. The method of claim 1 , further comprising:
cleaning at least the first surface of the dies while the dies are fixed to the carrier;
plasma activating the first surface of the dies while the dies are fixed to the carrier; and
re-cleaning at least the first surface of the dies while the dies are fixed to the carrier.
3. The method of claim 1 , further comprising thermally treating the first die and the substrate to bond the first surface of the first die to the prepared surface of the substrate.
4. The method of claim 1 , further comprising:
cleaning the second surface of the first die;
plasma activating the second surface of the first die;
cutting the carrier around a perimeter of a second die, the cutting forming another portion of the carrier fixed to a second surface of the second die;
removing the second die from the quantity of dies while the other portion of the carrier is fixed to the second surface of the second die;
attaching a first surface of the second die to the second surface of the first die to form a stacked die arrangement; and
thermally treating the stacked die arrangement.
5. The method of claim 1 , further comprising punching one or more additional dies from the carrier, attaching the one or more additional dies to the second die and to each subsequent die to form the stacked die arrangement.
6. The method of claim 1 , further comprising stretching the carrier to form gaps between the dies fixed to the carrier and perforating the carrier along the gaps.
7. The method of claim 6 , wherein the carrier is perforated with an optical laser tool.
8. The method of claim 6 , further comprising cleaning one or more edges of the dies while the dies are fixed to the carrier.
9. The method of claim 1 , further comprising plasma ashing the first surface of the dies while the dies are fixed to the carrier.
10. The method of claim 1 , further comprising removing the first die using a vacuum tool, wherein the vacuum tool is arranged to attach to the portion of the carrier fixed to the second surface of the first die, and to place the first die onto the prepared surface of the substrate without making direct contact with a surface or an edge of the first die.
11. The method of claim 1 , further comprising:
forming an opening in the carrier by cutting the carrier around the perimeter of the first die;
attaching a picking tool to the portion of the carrier, the portion of the carrier being fixed to the second surface of the first die; and
removing the first die from the quantity of dies by pulling the first die through the opening or pushing the first die via the opening with the picking tool.
12. The method of claim 1 , wherein the carrier comprises a dicing sheet.
13. A method of forming a microelectronic assembly, comprising:
depositing a protective coating onto one or both surfaces of a substrate;
fixing the substrate onto a dicing sheet;
singulating the substrate into a quantity of singulated elements fixed to the dicing sheet;
cleaning a first surface of the singulated elements while the singulated elements are fixed to the dicing sheet;
exposing the singulated elements to ultraviolet radiation;
stretching the dicing sheet to form or extend gaps between the singulated elements fixed to the dicing sheet;
cleaning the protective coating from the first surface of the singulated elements while the singulated elements are fixed to the dicing sheet;
plasma ashing the first surface of the singulated elements while the singulated elements are fixed to the dicing sheet;
re-cleaning the first surface of the singulated elements while the singulated elements are fixed to the dicing sheet;
plasma activating the first surface of the singulated elements while the singulated elements are fixed to the dicing sheet;
cleaning the first surface of the singulated elements again while the singulated elements are fixed to the dicing sheet;
forming perforations in the dicing sheet along the gaps;
punching a first singulated element from the dicing sheet along the perforations in the dicing sheet with a vacuum tool, a portion of the dicing sheet fixed to a second surface of the first singulated element and protecting the second surface of the first singulated element from the vacuum tool;
placing the first singulated element onto a prepared substrate surface;
attaching the first singulated element to the prepared substrate surface, the first surface of the first singulated element being attached to the prepared substrate surface;
thermally treating the first singulated element and the prepared substrate surface;
cleaning the second surface of the first singulated element;
plasma activating the second surface of the first singulated element;
punching a second singulated element from the dicing sheet with the vacuum tool, another portion of the dicing sheet fixed to a second surface of the second singulated element and protecting the second surface of the second singulated element from the vacuum tool;
attaching a first surface of the second singulated element to the second surface of the first singulated element to form a stacked microelectronic arrangement; and
thermally treating the stacked microelectronic arrangement.
14. The method of claim 13 , wherein the substrate comprises a wafer.
15. The method of claim 13 , wherein the prepared substrate surface comprises a wafer surface or a die surface or a dielectric surface or a polymeric layer or a conductive layer.
16. The method of claim 13 , wherein the prepared substrate surface comprises a surface of an interposer, a surface of a package, a surface of a flat panel, a surface of a circuit, or a surface of a silicon or non-silicon wafer.
17. The method of claim 13 , wherein the first singulated element and the prepared substrate surface are comprised of a same material.
18. The method of claims 13 , wherein the first singulated element and the prepared substrate surface are comprised of dissimilar materials.
19. The method of claim 13 , wherein the first surface of the first singulated element includes a flowable interconnect material.