Semiconductor device, manufacturing method, and solid-state imaging device
The present technology relates to a semiconductor device, a manufacturing method, and a solid-state imaging device which are capable of suppressing a decrease in bonding strength and preventing a poor electrical connection or peeling when two substrates are bonded to each other. Provided is a semiconductor device, including: a first substrate including a first electrode including a metal; and a second substrate bonded to the first substrate and including a second electrode including a metal. An acute-angled concavo-convex portion is formed on a side surface of a groove in which the first electrode is formed and a side surface of a groove in which the second electrode metal-bonded to the first electrode is formed. The present technology can be, for example, applied to a solid-state imaging device such as a CMOS image sensor.
1. A semiconductor device, comprising:
a first substrate including a first electrode including a metal; and
a second substrate bonded to the first substrate and including a second electrode including the metal,
wherein an acute-angled concavo-convex portion is formed on a side surface of a first groove in which the first electrode is formed and a side surface of a second groove in which the second electrode metal-bonded to the first electrode is formed.
2. The semiconductor device according to claim 1 , wherein
side roughness is formed in a part of the side surface of the first groove, and
a metal seed corresponding to a shape of the first groove, part of which has the side roughness, is formed between the first groove and the metal.
3. The semiconductor device according to claim 1 , wherein
a part of the side surface of the first groove has an acute-angled concavo-convex shape, and
a metal seed corresponding to a shape of the first groove is formed between the first groove and the metal.
4. A semiconductor device manufacturing method, comprising:
forming side roughness in a part of a side surface of a groove in which an electrode including a metal is formed;
forming a metal seed corresponding to a shape of the groove, part of which has the side roughness, in the groove;
forming the metal in the groove in which the metal seed is formed, by metal plating growth; and
bonding a first substrate including the electrode and a second substrate including the electrode to each other,
wherein, when thermal treatment is performed on the first substrate and the second substrate, the metal expands and enters a space which is formed by insufficient metal plating by the metal seed corresponding to the side roughness in the metal plating growth.
5. A semiconductor device manufacturing method, comprising:
forming an acute-angled concavo-convex shape in a part of a side surface of a groove in which an electrode including a metal is formed;
forming a metal seed corresponding to a shape of the groove in the groove;
forming the metal in the groove in which the metal seed is formed, by metal plating growth; and
bonding a first substrate including the electrode and a second substrate including the electrode to each other,
wherein, when thermal treatment is performed on the first substrate and the second substrate, the metal expands and enters a space which is formed by insufficient metal plating by the metal seed corresponding to the acute-angled concavo-convex shape in the metal plating growth.
6. A solid-state imaging device, comprising:
the semiconductor device according to claim 1 , wherein
the first substrate is a sensor substrate including a pixel region in which a plurality of pixels each including a photoelectric conversion portion is two-dimensionally arranged, and
the second substrate is a circuit substrate including a predetermined circuit.