IP Library › Granted Patent US 11,195,805
Granted Patent B2
US 11,195,805 · App. 15/942,092 · Granted Dec 7, 2021

Capacitor die embedded in package substrate for providing capacitance to surface mounted die

Inventors: Andrew Collins (Chandler, AZ); Sujit Sharan (Chandler, AZ); Jianyong Xie (Chandler, AZ)
Assignee: Intel Corporation
H01L23/66H01L21/4846H01L23/5223H01L23/5286H01L23/5381H01L23/5389H01L25/16H01L25/50H01L23/481H01L2223/6666H01L2223/6672
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Quick Facts
Patent No.
US 11,195,805
App. No.
15/942,092
Granted
Dec 7, 2021
Kind
B2
Abstract

A package substrate is disclosed. The package substrate includes a die package in the package substrate located at least partially underneath a location of a power delivery interface in a die that is coupled to the surface of the package substrate. Connection terminals are accessible on a surface of the die package to provide connection to the die that is coupled to the surface of the package substrate. Metal-insulator-metal layers inside the die package are coupled to the connection terminals.

Claims (30)

1. A package substrate, comprising:

a capacitor die embedded in the package substrate at least partially underneath a surface mounted die, wherein the capacitor die is a single-sided MIM capacitor die;

connection terminals accessible at a surface of the capacitor die embedded in the package substrate to provide connection to the surface mounted die, the surface of the capacitor die facing the surface mounted die; and

metal-insulator-metal layers inside the capacitor die embedded in the package substrate coupled to the connection terminals.

2. The package substrate of claim 1 , wherein the surface mount die comprises an integrated circuit die, an FPGA or an ASIC.

3. The package substrate of claim 1 , wherein the capacitor die is in front side build-up layers of the package substrate.

4. The package substrate of claim 1 , wherein the capacitor die includes a vertical wiring path to the surface mounted die.

5. The package substrate of claim 1 , wherein the capacitor die supports at least two power domains.

6. The package substrate of claim 1 , wherein the capacitor die occupies two or less levels of the package substrate.

7. The package substrate of claim 1 , wherein the capacitor die is in a core of the package substrate.

8. The package substrate of claim 1 , wherein the surface mounted die is surrounded by other surface mounted die that are coupled to the surface mounted die by EMIB connectors.

9. A package substrate, comprising:

package interconnects;

dielectric layers;

metal layers; and

an embedded capacitor die in the package substrate that is at least partially underneath a surface mounted die, wherein the embedded capacitor die is a single-sided MIM capacitor die.

10. The package substrate of claim 9 , wherein the surface mount die comprises an integrated circuit die, an FPGA or an ASIC.

11. The package substrate of claim 9 , wherein the embedded capacitor die is in front side build-up layers of the package substrate.

12. The package substrate of claim 9 , wherein the embedded capacitor die includes a vertical path to the surface mounted die.

13. The package substrate of claim 9 , wherein the embedded capacitor die supports at least two power domains.

14. The package substrate of claim 9 , wherein the embedded capacitor die occupies two or less levels of the package substrate.

15. The package substrate of claim 9 , wherein the surface mounted die is surrounded by other surface mounted die that are coupled to the surface mounted die by EMIB connectors.

16. A method, comprising:

identifying a space in a package substrate of a surface mount die;

embedding a capacitor die in the space of the package substrate in build-up layers of the space, wherein the capacitor die is a single-sided MIM capacitor die; and

connecting the surface mount die to the capacitor die with a connector.

17. The method of claim 16 , wherein the capacitor die is embedded in front side build-up layers of the package substrate.

18. The method of claim 16 , wherein the connector provides a vertical path between the capacitor die and the surface mount die.

19. The method of claim 16 , wherein the capacitor die supports at least two power domains.

20. The method of claim 16 , wherein the capacitor die occupies two or less levels of the package substrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 4, 2018
From: COLLINS, ANDREW; SHARAN, SUJIT; XIE, JIANYONG
To: INTEL CORPORATION
Reel/Frame 047667/0646 →
Continuity (1)
Related Publication 20190304935A1 · Oct 3, 2019