Stacked MIM capacitors with self-aligned contact to reduce via enclosure
A method is presented for forming a stacked metal-insular-metal (MIM) capacitor with self-aligned contact. The method includes forming a first electrode plate over a first interlayer dielectric (ILD), forming a first spacer adjacent the first electrode plate, forming a first insulating layer over the first electrode plate, forming a second electrode plate over the first insulating layer, and forming a second spacer adjacent the second electrode plate and the first insulating layer. The method further includes forming a second insulating layer over the second electrode plate, forming a third electrode plate over the second insulating layer, forming a third spacer adjacent the third electrode plate and the second insulating layer, and forming a second ILD over the third electrode plate. The method also includes forming a first via through the second ILD and directly contacting the second spacer such to prevent the first via from contacting the second electrode plate.
1. A method for forming a stacked metal-insular-metal (MIM) capacitor with self-aligned contact, the method comprising:
forming a first electrode plate over a first interlayer dielectric (ILD);
forming a first spacer adjacent the first electrode plate;
forming a first insulating layer over the first electrode plate;
forming a second electrode plate over the first insulating layer;
forming a second spacer adjacent the second electrode plate and the first insulating layer;
forming a second insulating layer over the second electrode plate;
forming a third electrode plate over the second insulating layer;
forming a third spacer adjacent the third electrode plate and the second insulating layer;
forming a second ILD over the third electrode plate; and
forming a first via through the second ILD and directly contacting the second spacer such that the second spacer prevents the first via from contacting the second electrode plate.
2. The method of claim 1 , further comprising forming a second via directly contacting the third spacer such that the third spacer prevents the second via from contacting the third electrode plate.
3. The method of claim 1 , wherein the first and third spacers are substantially aligned.
4. The method of claim 1 , wherein the first, second, and third spacers are formed from silicon nitride (SiN).
5. The method of claim 1 , wherein each of the first, second, and third spacers defines at least one tapered surface.
6. The method of claim 1 , wherein the first and second insulating layers are high-k dielectric layers.
7. A method for forming a stacked metal-insular-metal (MIM) capacitor with self-aligned contact, the method comprising:
forming a plurality of electrode plates separated from each other by dielectric layers; and
forming at least one spacer of a plurality of spacers adjacent at least one electrode plate of the plurality of electrode plates, wherein all of the plurality of spacers are formed directly between two vias,
wherein the at least one spacer includes a tapered surface directly contacting at least one of the two vias.
8. The method of claim 7 , wherein the plurality of electrode plates includes three electrode plates alternating between the dielectric layers.
9. The method of claim 8 , wherein the dielectric layers include two dielectric layers.
10. The method of claim 7 , wherein the tapered surface of the at least one spacer prevents an edge of the at least one electrode plate of the plurality of electrode plates from contacting the at least one of the two vias.
11. The method of claim 7 , wherein the at least one spacer is a silicon nitride (SiN) self-aligned contact spacer.
12. The method of claim 7 , wherein the dielectric layers are high-k dielectric layers.
13. A semiconductor structure for constructing a stacked metal-insular-metal (MIM) capacitor with self-aligned contact, the structure comprising:
a first electrode plate disposed over a first interlayer dielectric (ILD);
a first spacer disposed adjacent the first electrode plate;
a first insulating layer disposed over the first electrode plate;
a second electrode plate disposed over the first insulating layer;
a second spacer disposed adjacent the second electrode plate and the first insulating layer;
a second insulating layer disposed over the second electrode plate;
a third electrode plate disposed over the second insulating layer;
a third spacer disposed adjacent the third electrode plate and the second insulating layer;
a second ILD disposed over the third electrode plate; and
a first via disposed through the second ILD to directly contact the second spacer such that the second spacer prevents the first via from contacting the second electrode plate.
14. The structure of claim 13 , wherein a second via is constructed to directly contact the third spacer such that the third spacer prevents the second via from contacting the third electrode plate.
15. The structure of claim 13 , wherein the first and third spacers are substantially aligned.
16. The structure of claim 13 , wherein the first, second, and third spacers are constructed from silicon nitride (SiN).
17. The structure of claim 13 , wherein each of the first, second, and third spacers defines at least one tapered surface.
18. The structure of claim 13 , wherein the first and second insulating layers are high-k dielectric layers.