Semiconductor device and method for manufactring semiconductor device
Provided is a semiconductor device having favorable reliability. A manufacturing method of a semiconductor device comprising the steps of: forming a first oxide semiconductor having an island shape; forming a first conductor and a second conductor over the first oxide semiconductor; forming an oxide semiconductor film over the first oxide semiconductor, the first conductor, and the second conductor; forming a first insulating film over the oxide semiconductor film; forming a conductive film over the first insulating film; removing part of the first insulating film and part of the conductive film to form a first insulator and a third conductor; forming a second insulating film covering the first insulator and the third conductor; removing part of the oxide semiconductor film and part of the second insulating film to form a second oxide semiconductor and a second insulator and to expose a side surface of the first oxide semiconductor; forming a third insulator in contact with the side surface of the first oxide semiconductor and with a side surface of the second oxide semiconductor; forming a fourth insulator in contact with the third insulator; and performing a microwave-excited plasma treatment to the third insulator and the fourth insulator.
1. A semiconductor device comprising:
a first conductor;
a second conductor;
a first insulating film between the first conductor and the second conductor;
a second insulating film over the first conductor and the second conductor;
an oxide semiconductor over the second insulating film;
a third insulating film over the oxide semiconductor;
a first conductive film over the third insulating film;
a fourth insulating film over the first conductive film; and
a sixth insulating film over a top and a side of the first conductive film,
wherein a first thickness of the sixth insulating film over the top of the first conductive film is larger than a second thickness of the sixth insulating film over the side of the first conductive film.
2. The semiconductor device according to claim 1 ,
wherein a top surface of the first conductor and a top surface of the first insulating film are on a same plane.
3. The semiconductor device according to claim 1 ,
wherein the second insulating film comprises openings, and
wherein the openings overlap with the first conductor and the second conductor.
4. The semiconductor device according to claim 1 ,
wherein the fourth insulating film is in contact with the second insulating film.
5. The semiconductor device according to claim 1 ,
wherein the fourth insulating film comprises aluminum oxide.
6. The semiconductor device according to claim 1 , further comprising,
a fifth insulating film,
wherein the first conductor and the first conductive film are between the fourth insulating film and the fifth insulating film.
7. The semiconductor device according to claim 6 ,
wherein the fifth insulating film comprises aluminum oxide.
8. A semiconductor device comprising:
a first conductor;
a second conductor;
a first insulating film over the first conductor and the second conductor;
an oxide semiconductor over the first insulating film;
a second insulating film over the oxide semiconductor;
a first conductive film over the second insulating film;
an oxide layer over the first conductive film;
a third insulating film over the oxide layer; and
a fifth insulating film over a top and a side of the first conductive film,
wherein a first thickness of the fifth insulating film over the top of the first conductive film is larger than a second thickness of the fifth insulating film over the side of the first conductive film.
9. The semiconductor device according to claim 8 ,
wherein the second insulating film is in contact with the third insulating film.
10. The semiconductor device according to claim 8 ,
wherein the first insulating film comprises openings, and
wherein the openings overlap with the first conductor and the second conductor.
11. The semiconductor device according to claim 8 ,
wherein the third insulating film is in contact with the first insulating film.
12. The semiconductor device according to claim 8 ,
wherein the third insulating film comprises aluminum oxide.
13. The semiconductor device according to claim 8 , further comprising,
a fourth insulating film,
wherein the first conductor and the first conductive film are between the third insulating film and the fourth insulating film.
14. A semiconductor device comprising:
a first conductor;
a second conductor;
a first insulating film between the first conductor and the second conductor;
an oxide semiconductor over the first insulating film;
a second insulating film over the oxide semiconductor;
a first conductive film over the second insulating film;
an oxide layer over the first conductive film, the oxide layer being in contact with the oxide semiconductor;
a third insulating film over the oxide layer; and
a fifth insulating film over a top and a side of the first conductive film,
wherein a first thickness of the fifth insulating film over the top of the first conductive film is larger than a second thickness of the fifth insulating film over the side of the first conductive film.
15. The semiconductor device according to claim 14 ,
wherein a top surface of the first conductor and a top surface of the first insulating film are on a same plane.
16. The semiconductor device according to claim 14 ,
wherein the third insulating film is in contact with the second insulating film.
17. The semiconductor device according to claim 14 ,
wherein the third insulating film comprises aluminum oxide.
18. The semiconductor device according to claim 14 , further comprising,
a fourth insulating film,
wherein the first conductor and the first conductive film are between the third insulating film and the fourth insulating film.